mosfet switch mmrf1305hsr5

Brand Name:Hua Xuan Yang

Model Number:AP8810TS

Place of Origin:ShenZhen China

Multi Functional Mosfet Power Switch / AP8810TS High Current Mosfet Switch General Description: Mos Field Effect Transistor are used in many power supply and general power applications, especially as switches. Variant s include planar MOSFETs, VMOS, UMOS ...

Brand Name:Infineon Technologies

Model Number:IRF530NPBF

Place of Origin:original

IRF530NPBF MOSFET Power Electronics High Power N Channel MOSFET Switching Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 17A (Tc) Drive ...

Brand Name:Lingxun

Place of Origin:China

Lower Gate Threshold Voltage MOSFET For Digital Circuits Mosfet Switching *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: ...

Brand Name:FAIRCHILD

Model Number:FDN304PZ

Place of Origin:Original

...Channel 1.8V Specified PowerTrench MOSFET switching power mosfet Features · ► –2.4 A, –20 V. RDS(ON) = 52 mW @ VGS = –4.5 V RDS(ON) = 70 mW @ VGS = –2.5 V RDS(ON) = 100 mW @ VGS = –1.8 V ► Fast switching speed ► ESD protection diode ► ...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:HXY9926A

...le retaining a 12V VGS(MAX) rating. This device is suitable for use as a unidirectional or bi-directional load switch. Product Summary Absolute Maximum Ratings T =25°C unless otherwise noted Electrical Characteristics (T =25°C unless otherwise noted) A.

Brand Name:FAIRCHILD

Model Number:FDN304PZ

Place of Origin:Original

...Channel 1.8V Specified PowerTrench MOSFET switching power mosfet Features · ► –2.4 A, –20 V. RDS(ON) = 52 mW @ VGS = –4.5 V RDS(ON) = 70 mW @ VGS = –2.5 V RDS(ON) = 100 mW @ VGS = –1.8 V ► Fast switching speed ► ESD protection diode ► ...

Brand Name:TOSHIBA

Model Number:2SK3878

Place of Origin:CHINA

2SK3878 K3878 TO3P N-Channel Power MOSFET Switching Regulator IC List Of Other Electronic Components In Stock CKCA43JB1H103MT010N TDK LD1117AG-1.5V-A UTC M74HCT574B1R STM LC99808WE SANYO ...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

High Frequency Silicon Carbide MOSFET Device for Industrial Applications *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, ...

Brand Name:JUYI

Model Number:JY21L

Place of Origin:China

JY21L High and Low side driver, high voltage, high speed power MOSFET and IGBT driver based on P-SUB P-EPI process. General Description The product is a high voltage, high speed power MOSFET and IGBT driver based on P-SUB P-EPI process. The floating ...

Brand Name:INFINEON

Model Number:BTS724G

INFINEON Chip BTS724G IC PWR SWITCH N-CHAN 1:1 DSO-20 Manufacturer: Infineon Product Category: Power Switch ICs - Power Distribution RoHS: Details Type: High Side Number of Outputs: 4 Output Output Current: 3.3 A Current Limit: 12 A On Resistance - Max: 90...

Brand Name:SUG

Model Number:PWM-SP-30A 36/48V

Place of Origin:China

SSN Small Solar Charge Controller 30A 36/48V For Lithium Battery Function: Systematic voltage auto-identification MCU design with high speed and excellent performance Nice heat dissipation and electromagnetism compat design PWM charging main circuit which ...

Categories:RF MOSFET Transistors

Country/Region:china

The MMRF1305HSR5,from Freescale / NXP,is RF MOSFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through...

Categories:RF FETs, MOSFETs

Country/Region:china

RF Mosfet 50 V 100 mA 512MHz 26dB 100W NI-780S-4L

Categories:RF FETs, MOSFETs

Country/Region:china

RF Mosfet 50 V 100 mA 512MHz 26dB 100W NI-780S-4L

Brand Name:HT

Model Number:F7N65L TO-220F-3L

Place of Origin:China

...MOSFET 7A 650V Applications In Switching Power Supplies And Adaptors 7A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching

Brand Name:Infineon

Model Number:IRF640NPBF

Place of Origin:Original Factory

...Switching MOSFET Power Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs...

Brand Name:JUYI

Model Number:JY2504NPM

Place of Origin:China

... RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. FEATURES ● Low Input Capacitance ● Fast Switching Speed APPLICATIONS ● Power Management ● DC/DC Converter ● DC Motor Control ●

Brand Name:Original brand

Model Number:STO33N60M6

Place of Origin:Original

Mosfet Power Transistor STO33N60M6 MOSFET N-channel 600 V, 105 mOhm typ., 26 A Feature • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected • High creepage package • Excellent switching performance thanks to the extra driving source pin Applications • Switching applications • LLC converters • Boost PFC converters Categories Mosfet...

Brand Name:Vishay

Model Number:SI7804DN-T1-E3DKR-ND

Place of Origin:USA

SI7804DN-T1-E3DKR-ND MOSFET RECOMMENDED ALT Product Attribute Attribute Value Manufacturer: Vishay Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: PowerPAK-1212-8 Tradename: TrenchFET Series: SI7 Packaging: ...

Place of Origin:PHILIPPINE

Brand Name:Fuji Electric

Model Number:FMH23N50E

...power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Specifications: part no