mosfet transistor for power applications

Brand Name:onsemi

Model Number:FQA13N80-F109

Place of Origin:original

FQA13N80-F109 MOSFET Power Electronics TO-3P-3 Transistor High Power Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800 V Current - Continuous Drain (Id) @ 25°C 12.6A (Tc) ...

Brand Name:Anterwell

Model Number:2SB649A

Place of Origin:original factory

2SB649/A PNP SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A ORDERING INFORMATION ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified) PARAMETER SYMBOL ...

Model Number:MRF9030

Place of Origin:original factory

...MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N–Channel Enhancement–Mode Lateral MOSFETs 945 MHz, 30 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:WSP4012

QM4803D​ N-Ch and P-Channel MOSFET Description The QM4803D is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gatecharge for most of the synchronous buck converter applications . The ...

Brand Name:Lingxun

Place of Origin:China

...Power Consumption SMPS Super Junction MOSFET For High Power Application Product Description: One of the key features of this MOSFET is its very high commutation ruggedness, making it an ideal choice for applications where switching losses need to be minimized. In addition, its much lower Ron*A performance delivers exceptional on-state efficiency, improving overall power...

Brand Name:Infineon Technologies

Model Number:IRFP4568PBF

Place of Origin:Original

... Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Description 150V Single N-Channel StrongIRFET™ Power MOSFET in a TO-247 package The StrongIRFET™ power MOSFET family is

Brand Name:Original brand

Model Number:TPS2330IPWR

Place of Origin:Original Manufacturer

...POWER AMP TRANSISTOR TPS2330IPWR WITH CIRCUIT BREAKER Type: Hot Swap Controller Applications: General Purpose Programmable Features: Circuit Breaker, Fault Timeout, Slew Rate Voltage - Supply: 3V ~ 13V High Light: high power mosfet transistors , n channel mosfet transistor TPS2330IPWR Hot Swap Controller with circuit breaker and power-good reporting 1 Channel General Purpose FEATURES •Single-Channel High-Side MOSFET...

Brand Name:Original brand

Model Number:STO33N60M6

Place of Origin:Original

Mosfet Power Transistor STO33N60M6 MOSFET N-channel 600 V, 105 mOhm typ., 26 A Feature • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected • High creepage package • Excellent switching performance thanks to the extra driving source pin Applications • Switching applications • LLC converters • Boost PFC converters Categories Mosfet Power Transistor

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

... as solar inverter, high-voltage DC/DC converter, motor driver, UPS power supply, switching power supply, charging pile, etc. The device is based on the national military standard production line, and it provides a reliable quality and a stable process.

Brand Name:Semelab

Model Number:D1028UK

Place of Origin:UK

... A Vds - Drain-Source Breakdown Voltage: 70 V Operating Frequency: 175 MHz Gain: 13 dB Output Power: 300 W Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: DR Brand: Semelab / TT ...

Brand Name:original

Model Number:IRFR1018EPBF

Place of Origin:original

...MOSFET Transistors Si TO-252-3 original in stock Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Product Attribute Attribute Value Product Category: MOSFET

Brand Name:Hua Xuan Yang

Model Number:G045P03LQ1C2

Place of Origin:ShenZhen China

...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available N Channel Mos Field Effect Transistor Applications Switching Application Power...

Brand Name:Alpha Omega Semiconductor Inc

Model Number:AO3402

... gate voltages as low as 2.5V. This device is suitable for use as a load switch or other general applications. Basic data ​1. product model:AO3402 2. Product features:Switching power supply protection 3. wrap:SOT23-3 4. FET type: Single N-Channel MOS 5

Brand Name:Infineon

Model Number:IRF7404TRPBF

Place of Origin:Original Factory

... possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of

Brand Name:IOR

Model Number:IRF640NSTRLPBF

Place of Origin:CN

...Rated Ease of Paralleling Simple Drive Requirements Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with

Brand Name:Original Factory

Model Number:IAUTN06S5N008T

Place of Origin:CN

...MOSFETs Transistors PG-HDSOP-16 Product Description Of IAUTN06S5N008T IAUTN06S5N008T is optiMOS™ 5 Automotive Power MOSFET, 60 V Transistors,the package is PG-HDSOP-16. Specification Of IAUTN06S5N008T Part Number: IAUTN06S5N008T VDS: 60V RDS(on): 0.79mΩ ID (chip limited): 503A Package: PG-HDSOP-16 Operating Temperature: 175°C Features Of IAUTN06S5N008T OptiMOS™ power MOSFET for automotive applications

Place of Origin:US

Brand Name:Original

Model Number:IRFZ44N

Product Detail Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 49A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 17.5 ...

Brand Name:INFINEON

Model Number:IRF540NSTRLPBF

Place of Origin:Germany

...Power MOSFET Transistor 100V 44mΩ 33A New Orignal high quality Parameters in details: Advanced HEXFET Power MOSFETs from Packaging: the TO - 263 Type: N channel Continuous drain current (ID) at 25°C: 33A Drain-source voltage (VDSS) : 100V Gate source threshold voltage: 4V @ 250uA Leakage source on resistance: 44 MQ2@16A,10V Maximum power...

Model Number:IRF1404PBF

Place of Origin:China

Brand Name:original

Transistor MOSFET N channel 162A 40V 4MOHM MOS tube IRF1404PBF Products Description: 1. INFINEON IRF1404PBF transistor, MOSFET, N channel, 162 A, 40 V, 4 MoHM, 10 V, 4 V 2. The to-220 package is universally preferred for allcommercial-industrial applications at power...

Categories:Discrete Semiconductors

Country/Region:china

POWER MOSFET TRANSISTOR APT94N65B2C3G APT94N65B2C3G Microsemi Corporation (now Microchip) MOSFET N-CH 650V 94A T-MAX Product Technical Specifications Category Integrated Circuits (ICs) 　 APT94N65B2C3G POWER MOSFET TRANSISTOR Mfr MICROSEMI/MICROCHIP Series - Package Tube Product Status Obsolete Mounting Type Through Hole Operating Temperature - Supplier Device Package APT94N65B2C3G POWER MOSFET TRANSISTOR Package / Case MOSFET...