mosfet transistor for power management

Brand Name:Hua Xuan Yang

Model Number:13P10D

Place of Origin:ShenZhen China

13P10D -100V Mosfet Power Transistor For Power Management ESD Protested DESCRIPTION The 13P10D uses advanced trench technology and design to provide excellent RDS(ON) with low gat e charge. It can be ...

Brand Name:MOTOROLA

Model Number:MLP1N06CLG

Place of Origin:Original

Internally Clamped, Current Limited N–Channel Logic Level Power MOSFET These SMARTDISCRETES devices feature current limiting for short circuit protection, an integral gate–to–source clamp for ESD protection and gate–to–drain clamp for over–voltage ...

Brand Name:Anterwell

Model Number:2SB649A

Place of Origin:original factory

2SB649/A PNP SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A ORDERING INFORMATION ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified) PARAMETER SYMBOL ...

Brand Name:onsemi

Model Number:FDMS86250

Place of Origin:Multi-origin

FDMS86250 MOSFET Power Electronics The FDMS86250 is a MOSFET power electronic device designed to provide high performance and reliable operation in a wide range of applications. It offers extremely low on-resistance, fast switching speed, and excellent ...

Brand Name:Original brand

Model Number:TPS2330IPWR

Place of Origin:Original Manufacturer

...POWER AMP TRANSISTOR TPS2330IPWR WITH CIRCUIT BREAKER Type: Hot Swap Controller Applications: General Purpose Programmable Features: Circuit Breaker, Fault Timeout, Slew Rate Voltage - Supply: 3V ~ 13V High Light: high power mosfet transistors , n channel mosfet transistor TPS2330IPWR Hot Swap Controller with circuit breaker and power-good reporting 1 Channel General Purpose FEATURES •Single-Channel High-Side MOSFET...

Brand Name:Hua Xuan Yang

Model Number:G045P03LQ1C2

Place of Origin:ShenZhen China

...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available N Channel Mos Field Effect Transistor Applications Switching Application Power Management...

Brand Name:original

Model Number:FDMQ8203

Place of Origin:original

Product Attribute Attribute Value Product Category: MOSFET Technology: Si Mounting Style: SMD/SMT Package / Case: MLP-12 Transistor Polarity: N-Channel, P-Channel Number of Channels: 4 Channel Vds - Drain-Source Breakdown Voltage: 100 V, 80 V Id - ...

Brand Name:Semelab

Model Number:D1028UK

Place of Origin:UK

... A Vds - Drain-Source Breakdown Voltage: 70 V Operating Frequency: 175 MHz Gain: 13 dB Output Power: 300 W Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: DR Brand: Semelab / TT ...

Brand Name:Monolithic Power Systems

Model Number:MP2303ADN-LF-Z

Place of Origin:Original Factory

... -40°C to +85°C Description The MP2303A is a monolithic synchronous buck regulator. The device integrates a 150mΩ high-side MOSFET and a 80mΩ low-side MOSFET that provide 3A continuous load current over a wide operating input voltage of 4.7V to 28V.

Brand Name:IOR

Model Number:IRF640NSTRLPBF

Place of Origin:CN

...Rated Ease of Paralleling Simple Drive Requirements Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with

Brand Name:STMicroelectronics

Model Number:STB24N60DM2

...Power Mosfet Transistors Field Effect Transistor Discrete N-Channel N-channel 600 V, 0.13 Ω typ., 21 A MDmesh™ DM2 Power MOSFETs in D²PAK, TO-220 and TO-247 packages App Characteristics Features Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Description These high voltage N-channel Power

Place of Origin:US

Brand Name:Original

Model Number:IRFZ44N

Product Detail Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 49A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 17.5 ...

Brand Name:onsemi

Model Number:FDA50N50

Place of Origin:Original Factory

...Mosfet 48A 500V DMOS AC−DC Power Supply Transistor Description UniFET MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power...

Brand Name:ON

Model Number:NCP59744MN1ADJTBG

Place of Origin:ON

NCP59744MN1ADJTBG LDO Power Management Chips 3A Transistor IC Chip NCP59744MN1ADJTBG LDO Voltage Regulators 3A DUAL RAIL VLDO LIN REG Transistor IC chip Manufacturer: onsemi Product Category: LDO Voltage Regulators RoHS: Details Mounting Style: SMD/SMT ...

Brand Name:Original Factory

Model Number:BSZ100N03MSGATMA1

Place of Origin:CN

...MOSFETs Transistors BSZ100N03MSGATMA1 Integrated Circuit Chip 8-PowerTDFN​ Product Description Of BSZ100N03MSGATMA1 BSZ100N03MSGATMA1 The OptiMOS™ 30V product is tailored to meet the power management needs of notebook computers, improving EMI behavior as well as extending battery life. Available in half-bridge configurations (power...

Brand Name:INFINEON

Model Number:IRF540NSTRLPBF

Place of Origin:Germany

...Power MOSFET Transistor 100V 44mΩ 33A New Orignal high quality Parameters in details: Advanced HEXFET Power MOSFETs from Packaging: the TO - 263 Type: N channel Continuous drain current (ID) at 25°C: 33A Drain-source voltage (VDSS) : 100V Gate source threshold voltage: 4V @ 250uA Leakage source on resistance: 44 MQ2@16A,10V Maximum power...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

...MOSFET is an Ultra-hv MOSFET, a kind of High Voltage Mosfet Transistor, that offers outstanding performance in terms of heat dissipation and low on-resistance. It is equipped with advanced features such as new Lateral Variable Doping Technology, Special Power MOS Structure and excellent characteristics in high-temperature, allowing for superior performance over the conventional High Voltage MOSFET...

Brand Name:Original brand

Model Number:NVHL040N65S3F

Place of Origin:Original

... to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is

Categories:Discrete Semiconductors

Country/Region:china

POWER MOSFET TRANSISTOR APT94N65B2C3G APT94N65B2C3G Microsemi Corporation (now Microchip) MOSFET N-CH 650V 94A T-MAX Product Technical Specifications Category Integrated Circuits (ICs) 　 APT94N65B2C3G POWER MOSFET TRANSISTOR Mfr MICROSEMI/MICROCHIP Series - Package Tube Product Status Obsolete Mounting Type Through Hole Operating Temperature - Supplier Device Package APT94N65B2C3G POWER MOSFET TRANSISTOR Package / Case MOSFET...

Brand Name:original

Model Number:LNK362DN

Place of Origin:China

...-powered on/Off control hysteresis overtemperature protection Power limit frequency fluctuations to reduce EMI EcoSmart® standby/no-load power consumption Low motor controllers and drivers, Renesas Electronics Power Integrations LNK362DN Link switch, off