mosfet transistor with high efficiency

Brand Name:onsemi

Model Number:FDD86102

Place of Origin:Multi-origin

FDD86102 MOSFET Power Electronics The FDD86102 is a MOSFET power electronics device designed to provide high-efficiency power conversion. It features low on-resistance and low gate charge for superior power delivery. The device is constructed with a low-...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

... MOSFET is a cutting-edge semiconductor device designed for a variety of applications requiring high efficiency, reliability, and low-power consumption. MOSFET, which stands for Metal-Oxide-Semiconductor Field-Effect Transistor, is a type of transistor ...

Brand Name:Freescale/Motorola

Model Number:MRF173

Place of Origin:USA

...MOSFETs RF Power Transistor Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of these devices make possible solid state transmitters for FM broadcast or TV channel frequency bands. 1, Guaranteed Performance at 150 MHz, 28 V: Output Power = 80 W Gain = 11 dB (13 dB Typ) Efficiency...

Brand Name:Anterwell

Model Number:TC4420CPA

Place of Origin:original factory

TC4420 TC4429 6A HIGH-SPEED MOSFET DRIVERS FEATURES ■ Latch-Up Protected ............ Will Withstand >1.5A Reverse Output Current ■ Logic Input Will Withstand Negative Swing Up to 5V ■ ESD Protected ..................................................... 4kV...

Place of Origin:China

Brand Name:Lingxun

...High Power MOSFET High Efficiency And Performance Applications: This product is manufactured in China by LX, a trusted name in the electronics industry. It is ISO9001, ISO14001, ROHS, and REACH certified, ensuring that it meets the highest quality standards. The High Power MOSFET product has a gate-source voltage (Vgs) of ±30V, making it ideal for use in high-frequency power applications. Its N-type category and Mosfet...

Model Number:TC4420CPA

Place of Origin:original factory

TC4420 TC4429 6A HIGH-SPEED MOSFET DRIVERS FEATURES ■ Latch-Up Protected ............ Will Withstand >1.5A Reverse Output Current ■ Logic Input Will Withstand Negative Swing Up to 5V ■ ESD Protected ..................................................... 4kV...

Brand Name:JUYI

Model Number:JY16M

Place of Origin:China

...density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. FEATURES ●

Brand Name:original

Model Number:CLA50E1200HB

Place of Origin:Original Factory

...HIGH POWER MOSFET TRANSISTORS / THYRISTOR FOR LINE FREQUENCY 1200V 50A Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: Circuit Control Mounting Type: Through Hole Package: TO247 High Light: n channel mosfet transistor , n channel transistor CLA50E1200HB High Efficiency...

Brand Name:Hua Xuan Yang

Model Number:G120P06LR1D

Place of Origin:ShenZhen China

...Mosfet Power Transistor / N Channel Mosfet Transistor Mosfet Power Transistor Introduction MOSFET technology is ideal for use in many power applications, where the low switch on resistance enables high levels of efficiency to be attained. There is a number of different varieties of power MOSFET available from different manufacturers, each with its own characteristics and abilities. Many power MOSFETs...

Brand Name:Infineon Technologies

Model Number:IRFP4568PBF

Place of Origin:Original

... Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Description 150V Single N-Channel StrongIRFET™ Power MOSFET in a TO-247 package The StrongIRFET™ power MOSFET family is

Brand Name:original

Model Number:IRFR1018EPBF

Place of Origin:original

...MOSFET Transistors Si TO-252-3 original in stock Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Product Attribute Attribute Value Product Category: MOSFET

Brand Name:Infineon

Model Number:IRF640NPBF

Place of Origin:Original Factory

...MOSFET Power Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient...

Brand Name:Original Factory

Model Number:MSC040SMA120B4

Place of Origin:CN

High Efficiency N-Channel Power MOSFET Transistors MSC040SMA120B4 TO-247-4 Product Description Of MSC040SMA120B4 MSC040SMA120B4 device is a 1200 V, 40 mΩ SiC MOSFET in a TO-247 4-lead package with a source sense.High efficiency to enable lighter, more ...

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDMQ8205

High Power MOSFET FDMQ8205 GreenBridgeTM 2 Series of High-Efficiency Bridge Rectifiers [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor...

Brand Name:Original brand

Model Number:NVHL040N65S3F

Place of Origin:Original

... to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is

Place of Origin:US

Brand Name:Original

Model Number:TPCA8016-H

Product Description Packaging Digi-Reel Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 25A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max...

Brand Name:STMicroelectronics

Model Number:STB24N60DM2

...Mosfet Transistors Field Effect Transistor Discrete N-Channel N-channel 600 V, 0.13 Ω typ., 21 A MDmesh™ DM2 Power MOSFETs in D²PAK, TO-220 and TO-247 packages App Characteristics Features Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Description These high...

Brand Name:Hua Xuan Yang

Model Number:AOD407

Place of Origin:ShenZhen China

...gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. -RoHS Compliant -Halogen Free* Parameters Part Number Status Package Polarity VDS (V) VGS (±V) ID (A) ...

Brand Name:INFINEON

Model Number:IPD80R1K4P7

Place of Origin:original

...resistance and high switching speed, making it very suitable for use in low voltage applications. Conclusion: IPD80R1K4P7 has the following characteristics: Very low switching and conduction losses; High voltage limit, capable of operating at high voltage;

Brand Name:INFINEON

Model Number:IRF540NSTRLPBF

Place of Origin:Germany

IRF540NSTRLPBF HEXFE Power MOSFET Transistor 100V 44mΩ 33A New Orignal high quality Parameters in details: Advanced HEXFET Power MOSFETs from Packaging: the TO - 263 Type: N channel Continuous drain current (ID) at 25°C: 33A Drain-source voltage (VDSS...