mosfets for power electronics applications

Brand Name:Infineon Technologies

Model Number:IRFP2907PBF

Place of Origin:original

...MOSFET for Power Electronics Applications IRFP2907PBF MOSFET This MOSFET is a high power, low-voltage N-Channel MOSFET with a drain-source voltage of 100V and a drain current of 19A. It has a fast switching speed and a low gate-source threshold voltage. It also has good thermal stability, excellent frequency performance, and a robust package. This MOSFET is suitable for high power applications such as power

Brand Name:JUYI

Model Number:JY11M

Place of Origin:China

...Power MOSFET GENERAL DESCRIPTION The JY11M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications...

Brand Name:JUYI

Model Number:JY16M

Place of Origin:China

General Description: The JY16M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and ...

Brand Name:ZIITEK

Model Number:TIF100-12E

Place of Origin:China

Semiconductor automated test equipment (ATE) Thermal Gap Filler For High Speed Mass Storage Drives The TIF100-12E thermally conductive interface materials are applied to fill the air gaps between the heating elements and the heat dissipation fins or the ...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

...Power N-Channel MOSFET is a cutting-edge semiconductor device designed for high power applications requiring superior performance and efficiency. With its high frequency operation, low on-resistance, and versatile applications, this MOSFET is the ideal choice for demanding power electronics designs. As a high power N-channel MOSFET, this device offers exceptional efficiency, making it a top choice for applications

Brand Name:ZETEX

Model Number:ZXMN10A09KTC

Place of Origin:Original

...MOSFET IN DPAK SUMMARY V(BR)DSS=100V : RDS(on)=0.085 ; ID=7.7A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. FEATURES • Low on-resistance • Fast switching speed • Low gate drive • D-Pak (T0-252) package APPLICATION

Categories:High Power MOSFET

Country/Region:china

... sale and service for clients over 10 years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor,IGBT,PCBA, prototype,BOM Kitting. Sunbeam Electronics has a

Brand Name:Onsemi

Model Number:STK681-310

Place of Origin:Taiwan

...Power MOSFET IGBT IC Electronic components - Motor Driver Power MOSFET, IGBT Parallel -IC Specification : Category Integrated Circuits (ICs) 　 PMIC - Motor Drivers, Controllers Mfr onsemi Part number STK681-310 Package Tube Part Status Obsolete Motor Type - Stepper - Motor Type - AC, DC Brushed DC Function Driver - Fully Integrated, Control and Power...

Brand Name:ONSEMI

Model Number:MJD122G

Place of Origin:Original

MJD122G Complementary Darlington Power Transistor switching power mosfet low power mosfet Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Surface ...

Brand Name:INFINEON

Model Number:IRF7342TRPBF

...MOSFET 1. Product Overview Infineon IRF7103342TRPBF is a high-performance N-channel enhancement-mode metal-oxide-semiconductor field-effect transistor (MOSFET) developed by Infineon Technologies AG—a global leader in semiconductor solutions for power management and industrial applications...

Brand Name:Vi shay

Model Number:IRFP064PBF

Place of Origin:Shenzhen, China

...MOSFET N-CH 60V 70A 3-Pin(3+Tab) TO-247AC Descriptions : Third generation Power MOSFETs from Vishay provide thedesigner with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:10G03S

...MOSFET Description The 10G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications General Features N-Channel VDS = 30V,ID =10A RDS(ON) < 16m Ω@ VGS=10V P-Channel VDS = -30V,ID = -9A RDS(ON) < 37mΩ@ VGS=-10V High power...

Brand Name:KRUNTER

Model Number:KWG600H12N4B

Place of Origin:CHINA

...speed switching capability of a power transistor with the efficiency of a MOSFET. This module features an Insulated Gate Bipolar Transistor (IGBT) element, which allows for efficient power control and management in a wide range of applications. Designed to

Place of Origin:CN

Brand Name:Original Factory

Model Number:F3L11MR12W2M1HPB19

...MOSFET Low Power IGBT Transistors Module [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 countries, customer satisfaction rate: 99.9% !! [Company profile] Shenzhen Mingjiada Electronics Co., Ltd. is an authorized independent distributor of electronic...

Brand Name:Infineon Technologies

Model Number:SPW20N60C3

Place of Origin:China

Infineon MOSFET N-Ch 650V 20.7A TO247-3 CoolMOS C3,600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ Replacement for 600V CoolMOS™ C3 is CoolMOS™ P7 600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the "working...

Brand Name:WINNER

Model Number:WNE T2

Place of Origin:CHINA

...Power Electronics in Automotive and Computing Equipment *The welding wire is manufactured from 6N high - purity aluminum material, with a certain proportion of trace elements added. *It is widely applied in the packaging of power semiconductors, including MOSFET, IGBT, Thyristor, GTO, Diode, etc. Al Wire for Power...

Brand Name:Shareway

Model Number:742792904

Place of Origin:Guangdong China

...Power Inductor for Power electronics Characteristics Suitable for applications with high currents up to 10 A Magnetically shielded version Core material NiZn for the use in a wide frequency range Operating temperature: –40 ºC to +125 ºC Applications Interference suppression in motors Switch mode PSUs Power electronics...

Brand Name:ANENpower

Model Number:APE025

Place of Origin:Shenzhen

... to meet the diverse needs of industrial, LED, and electronic applications. Available in 5V, 12V, and 24V output options, this long strip enclosed power supply provides reliable and stable power delivery in a sleek and durable aluminum case. Engineered for

Brand Name:CPET

Model Number:8620

Place of Origin:China

High Power High Power Electronic Load Instrument Equipment Factory Direct Sales Scope of application Apply to the burn-in testing of Adapter, Industrial power supply, Switching power supply,LED driver and other kind of power supply Apply to aging vehicles...

Brand Name:JUYI

Model Number:JY4N8M

Place of Origin:China

... gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Get more details please click here. Features ● 40V/80A, RDS(ON) ≤6.5mΩ