| Sign In | Join Free | My futurenowinc.com |
|
All multi emitter transistor wholesalers & multi emitter transistor manufacturers come from members. We doesn't provide multi emitter transistor products or service, please contact them directly and verify their companies info carefully.
| Total 110 products from multi emitter transistor Manufactures & Suppliers |
|
|
|
Brand Name:Anterwell Model Number:MMBT3904-7-F Place of Origin:original factory MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMBT3906) • Ideal for Medium Power Amplification and Switching • Lead Free/RoHS Compliant (Note 2) • Qualified to AEC-Q101 ... |
Anterwell Technology Ltd.
Guangdong |
|
|
Model Number:MMBT3904-7-F Place of Origin:original factory MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMBT3906) • Ideal for Medium Power Amplification and Switching • Lead Free/RoHS Compliant (Note 2) • Qualified to AEC-Q101 ... |
ChongMing Group (HK) Int'l Co., Ltd
|
|
|
Model Number:MJ11033G Aviation Parts MJ11033G Darlington Transistors Emitter- Base Voltage 5 V Descriptions of Aviation Parts: High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features... |
XIXIAN FORWARD TECHNOLOGY LTD
Shaanxi |
|
|
Place of Origin:China Brand Name:BWT Model Number:K808F02MN-15.00W Features: wavelength 808nm output power 15W 375µm fiber bundle diameter 0.22N.A. Applications: Laser pumping Illumination Medical use Material processing Specifications(25℃) Symbol Unit K808F02MN-15.00W Minimum Typical Maximum Parameter CW-Output Power Po... |
BWT Beijing Ltd.
Beijing |
|
|
Brand Name:Microchip / Microsemi Model Number:JAN2N2222A Place of Origin:ORIGINAL ...Transistors - BJT 50 V Small-Signal BJT Manufacturer: Microchip Product Category: Bipolar Transistors - BJT RoHS: N Technology: Si Mounting Style: Through Hole Package / Case: TO-18-3 Transistor Polarity: NPN Configuration: Single Maximum DC Collector Current: 800 mA Collector- Emitter Voltage VCEO Max: 50 V Collector- Base Voltage VCBO: 75 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter... |
Wisdtech Technology Co.,Limited
Guangdong |
|
|
Brand Name:ON Model Number:FGH60N60SFDTU Place of Origin:Original ...IGBT Transistors Technology: Si Package / Case: TO-247AB-3 Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 2.3 V Maximum Gate Emitter Voltage: - 20 V, + 20 V Continuous Collector Current at 25 C: 120 A |
Shenzhen Retechip Electronics Co., Ltd
Guangdong |
|
|
Place of Origin:ShenZhen China Brand Name:Hua Xuan Yang Model Number:A94 ...Transistors A94 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :A94 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter... |
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong |
|
|
Place of Origin:US Brand Name:Original Model Number:2SA1941 2SC5198 ...- Base Voltage VEBO: - 5 V Collector-Emitter Saturation Voltage: 2 V Gain Bandwidth Product fT: 30 MHz Maximum Operating Temperature: + 150 C Continuous Collector Current: ... |
Shenzhen Quanyuantong Electronics Co., Ltd.
|
|
|
Brand Name:NEC Model Number:2SC2987 Place of Origin:JAPAN ...Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1227 ·High power dissipation APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE VCBO Collector-base voltage Open emitter 140V VCEO Collector-emitter... |
DELI ELECTRONICS TECHNOLOGY CO.,LTD
Guangdong |
|
|
Place of Origin:ShenZhen China Brand Name:OTOMO Model Number:A42 ...Transistors A42 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :D965A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 310 V VCEO Collector-Emitter Voltage 305 V VEBO Emitter... |
Beijing Silk Road Enterprise Management Services Co.,LTD
|
|
|
Brand Name:original Model Number:2N3439 Place of Origin:original ...Transistors Through Hole TO-39-3 Manufacturer: original Product Category: Bipolar Transistors - BJT RoHS: N Mounting Style: Through Hole Package / Case: TO-39-3 Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 350 V Collector- Base Voltage VCBO: 450 V Emitter- Base Voltage VEBO: 7 V Collector-Emitter... |
Walton Electronics Co., Ltd.
|
|
|
Brand Name:Huixin Model Number:MMBT3906 SOT-23 Place of Origin:China ...Transistor PNP Surface Mount Transistor MMBT3906 SOT-23 MMBT3906 SOT-23 PNP Surface Mount Transistor MMBT3906 SOT-23 Datasheet.pdf FEATURES Complementary Type The NPN Transistor MMBT3904 is Recommended Epitaxial Planar Die Construction MARKING: 2A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter... |
Guangdong Huixin Electronics Technology Co., Ltd.
Guangdong |
|
|
Brand Name:ROHM Semiconductor Model Number:2SB1424 Place of Origin:JAPAN ...Transistors - BJT ROHS 2SB1424 PNP Low VCE(sat) Transistor Product Paramenters Manufacturer: ROHM Semiconductor Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Transistor Polarity: PNP Configuration: Single Collector- Emitter Voltage VCEO Max: 20 V Collector- Base Voltage VCBO: 30 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter... |
ShenZhen QingFengYuan Technology Co.,Ltd.
|
|
|
Brand Name:ST Model Number:BUF420AW Place of Origin:Malaysia ...LOT SPREAD FOR RELIABLE OPERATION ●LOW BASE-DRIVE REQUIREMENTS Description: The BUF420AW is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capacity. It uses a Cellular Emitter structure with |
Shenzhen Zhaocun Electronics Co., Ltd.
|
|
|
Brand Name:KEC Model Number:KTD1047 Place of Origin:Korean KTD1047 NPN Transistor Complementary to KTB817 for 60w High Power Amplifier Application CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 140 V Emitter-Base Voltage VEBO 6 V Collector Current DC IC 12 A ... |
Shenzhen ATFU Electronics Technology ltd
Guangdong |
|
|
Place of Origin:/ Brand Name:Fairchild Model Number:MJD45H11 ...Transistors MJD45H11 Fairchild TO-252 New and Original in stock • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK: “-I” Suffix) • Electrically Similar to Popular MJE45H • Fast Switching Speeds • Low Collector Emitter Saturation Voltage Transistor Type PNP Current - Collector (Ic) (Max) 8A Voltage - Collector Emitter... |
Mega Source Elec.Limited
|
|
|
Brand Name:CJ Model Number:BC848C Place of Origin:CHINA BC848C CJ Trans GP BJT NPN 30V 0.1A 250mW 3-Pin SOT-23 T/R Product Technical Specifications EU RoHS Compliant ECCN (US) EAR99 Part Status Active Automotive No PPAP No Type NPN Product Category Bipolar Small Signal Configuration Single Number of Elements... |
Sunbeam Electronics (Hong Kong) Limited
|
|
|
Brand Name:Diodes Incorporated Model Number:BC846B-7-F ...Transistors - BJT BIPOLAR TRANSISTOR NPN SOT-23 Product Attribute Attribute Value Select Attribute Manufacturer: Diodes Incorporated Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 65 V Collector- Base Voltage VCBO: 80 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter... |
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
|
|
|
Place of Origin:CN Brand Name:TYANSHINE Model Number:TX-BRWG2A140-001 RGBA / RGBW Multi Color High Power LED Diode , Purple LED Doide Emitter Multi Color RGB Purple High Power LED Diode Products’ Features: High Power Emitter LED RGBA/RGBW for stage lighting High light efficacy, low light decay By using original advanced ... |
GUANGZHOU TIANXIN PHOTOELECTRIC CO., LTD
Guangdong |
|
|
Brand Name:Lingxun Model Number:LGT40N65HB Place of Origin:China ...Multi Function Gate Bipolar Transistor Features • Positive temperature coefficient • Fast Switching • Low VCE(sat) • Reliable and Rugged PFC applications • Uninterruptible power supplies • Solar inverters Trench and field-stop technology • Low collector to emitter... |
Guangdong Lingxun Microelectronics Co., Ltd
Guangdong |