multipurpose sic mosfets

Brand Name:Original Factory

Model Number:MSCSM170HM23CT3AG

Place of Origin:CN

...Mosfet Array MSCSM170HM23CT3AG Full Bridge SiC MOSFET Power Module 602W ​ Product Description Of MSCSM170HM23CT3AG MSCSM170HM23CT3AG is Full Bridge SiC MOSFET Power Module, 1700 V, 124 A silicon carbide (SiC) Mosfet Array module. Specification Of MSCSM170HM23CT3AG Part Number MSCSM170HM23CT3AG Technology Silicon Carbide (SiC...

Brand Name:Lingxun

Place of Origin:China

Ultra Low Resistance SiC Mosfet High Efficiencys For Renewable Energy Systems *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;}img, picture, video, canvas, ...

Brand Name:Shareway

Model Number:750319331

Place of Origin:Guangdong China

... for 568 Vrms / 800 Vpk Operating temperature: -40 °C up to +130 °C Common control voltages for SiC MOSFET’s High Common-mode Transient Immunity (CMTI) Flyback, LLC, Half-Bridge topologies Up to 6 W output power Wide range ...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Product Description: High Voltage MOS-Gate Transistor, commonly known as High Voltage FET, is a type of semiconductor device designed for use in high voltage applications. This device has been gaining popularity due to its strong performance and wide range...

Brand Name:Cersol

Place of Origin:China

Description Silicon nitride ceramics have many excellent performances such as high hardness, high strength, small thermal expansion coefficient, small high temperature creep, good antioxidant performance, good thermal corrosion performance, and small ...

Brand Name:ZMSH

Model Number:SiC seed wafer

Place of Origin:CHINA

...SiC seed wafers SiC seed wafer 4H N type Dia 153 155 2inch-12inch customized Used for manufacturing MOSFETs Silicon Carbide (SiC) seed crystal wafers serve as fundamental materials in the semiconductor industry. Manufactured from high-purity silicon carbide (SiC) raw materials through Physical Vapor Transport (PVT) or High-Temperature Chemical Vapor Deposition (HTCVD) processes, our company specializes in supplying 2-12 inch SiC...

Brand Name:ZMSH

Model Number:4H Semi-insulating SiC substarte/wafer

Place of Origin:China

6H-N Semi-insulating SiC substarte/wafer for MOSFETs,JFETs BJTs,high resistivity wide bandgap Semi-insulating SiC substarte/wafer's abstract Semi-insulating silicon carbide (SiC) substrates/wafers have emerged as crucial materials in the realm of advanced ...

Brand Name:ZHENAN

Model Number:Silicon Carbide

Place of Origin:China

...Sic Description: Why can silicon carbide withstand such high voltages? Power devices, especially MOSFETs, must be able to handle extremely high voltages. SiC can achieve very high breakdown voltages, from 600V to several thousand volts, due to the dielectric breakdown strength of the electric field being about ten times higher than that of silicon. SiC...

Brand Name:InterLED

Model Number:BD1-40XXX-XX2

Place of Origin:China

Single digit, 0.4 inch digit, 7-segment diplay, common anode or common cathode. Single digits 7 segment led display selection guide Part No. Chip Electro-optical Data (At 10mA) Common Anode Common Cathode Material/Emitted Color Wave Length λd(nm) VF (V) Iv...

Brand Name:NXP

Model Number:MC33GD3100EK

Gate Drivers EV Inverter Control; IGBT & SiC GDIC Product Attribute Attribute Value Select Attribute Manufacturer: NXP Product Category: Gate Drivers RoHS: Details Product: IGBT, MOSFET Gate Drivers Type: Half-Bridge Mounting Style: SMD/SMT Package / Case...

Brand Name:XYMJ

Model Number:Customized

Place of Origin:China

High Standard Accuracy Round Tungsten Carbide Seal Ring For Mechanical Seals Tungsten carbide sealing ring has the characteristics of abrasive,corrosion resistance and good compressive properties.Therefore,it is widely used in the mechanical sealing of ...

Categories:RF Transistors

Country/Region:china

QPD1016 RF JFET Transistors DC-1.7 GHz 500W 50V GaN RF Tr Manufacturer: Qorvo Product Category: RF JFET Transistors RoHS: Details Transistor Type: HEMT Technology: GaN SiC Operating Frequency: DC to 1.7 GHz Gain: 23.9 dB Transistor Polarity: N-Channel Vds...

Place of Origin:Original

CAS325M12HM2 Specifications Part Status Active FET Type 2 N-Channel (Half Bridge) FET Feature Silicon Carbide (SiC) Drain to Source Voltage (Vdss) 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C 444A (Tc) Rds On (Max) @ Id, Vgs 4.3 mOhm @ 400A, 20V ...

Brand Name:ON

Model Number:NTH4L020N090SC1

Model Number:C3M0016120K

Place of Origin:original

Brand Name:original

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Categories:Onsemi Ic

Country/Region:china

...°C to 175°C Package: TO-247-3 The FSB70450 is a silicon carbide (SiC) P-channel MOSFET from Infineon Technologies. Key Features: Industry-leading 1200V blocking voltage Provides efficient switching of up to 45A loads Ultra-...

Model Number:6870C-0532A

Place of Origin:original

Brand Name:original

... protection Under voltage protectionFor use with Cree Module 45mm, six-pack CCS020M12CM2 45mm, six-pack CCS050M12CM2Applications Driver for SiC MOSFET modules in two-level, three

Brand Name:Diodes Incorporated

Model Number:ZXGD3006E6TA

ZXGD3006E6TA DrivenConfiguration Low-Side ChannelType Single NumberofDrivers 1 GateType IGBT, SiC MOSFET Voltage-Supply 40V (Max) LogicVoltage-VILVIH - Current-PeakOutput(SourceSink) 10A, 10A InputType Non-Inverting HighSideVoltage-Max(Bootstrap) - Rise/...

Brand Name:Infineon Technologies

Model Number:IMBG120R350M1HXTMA1

... Carbide (SiC) MOSFET modules that offer good levels of efficiency and system flexibility. These modules come with Near Threshold Circuits (NTC) and PressFIT contact technology. The ...