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All n channel mosfet 250v wholesalers & n channel mosfet 250v manufacturers come from members. We doesn't provide n channel mosfet 250v products or service, please contact them directly and verify their companies info carefully.
| Total 125 products from n channel mosfet 250v Manufactures & Suppliers |
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Brand Name:Fairchild Semiconductor Model Number:FQPF9N25C Place of Origin:CHINA FQPF9N25C 9N25C N-Channel MOSFET 250V 8.8A (Tc) 38W (Tc) Through Hole TO-220F FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 8.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V... |
Shenzhen Koben Electronics Co., Ltd.
Guangdong |
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Place of Origin:China Brand Name:ONSEMI Model Number:FQPF9P25 High Power MOSFET FQPF9P25 P-Channel QFET® MOSFET -250V 6A 620mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new... |
Sunbeam Electronics (Hong Kong) Limited
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Place of Origin:US Brand Name:Original Model Number:IRFS644B Product Detail Packaging Tube Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 14A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (... |
Shenzhen Quanyuantong Electronics Co., Ltd.
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Brand Name:TOSHIBA Model Number:TK5A90E,S4X Place of Origin:Original ..., combining π-MOS technology with a planar process to provide a wide selection of voltage and RDS(ON) ratings. These high-voltage MOSFETs are offered with a drain-source voltage range of 250V up to 650V, and with a drain current range from 2A to 20A. |
Shenzhen Retechip Electronics Co., Ltd
Guangdong |
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Brand Name:STMicroelectronics Model Number:STL150N3LLH5 Place of Origin:CHN ... MOSFET N-CH 30V 195A POWERFLAT N P Channel Mosfet Manufacturer: STMicroelectronics Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: PowerFLAT-5x6-8 Transistor Polarity: N-Channel Number of Channels: 1 Channel ... |
Wisdtech Technology Co.,Limited
Guangdong |
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Brand Name:Hua Xuan Yang Model Number:12N60 Place of Origin:ShenZhen China ...Channel Mosfet Transistor , Small Mosfet Power Switch Enhancement Mode N Channel Mosfet Transistor DESCRIPTION The UTC 12N60-C is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. N Channel Mosfet |
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong |
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Brand Name:Infineon Technologies Model Number:IRFP2907PBF Place of Origin:original ...Channel MOSFET for Power Electronics Applications IRFP2907PBF MOSFET This MOSFET is a high power, low-voltage N-Channel MOSFET with a drain-source voltage of 100V and a drain current of 19A. It has a fast switching speed and a low gate-source threshold voltage. It also has good thermal stability, excellent frequency performance, and a robust package. This MOSFET... |
Shenzhen Sai Collie Technology Co., Ltd.
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Brand Name:Original brand Model Number:IRF640NSTRLPBF Place of Origin:Original Manufacturer ...CHANNEL MOSFET TRANSISTOR 200V SURFACE MOUNT D2PAK Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: Mosfet Mounting Type: Surface Mount Package: D2PAK High Light: high power mosfet transistors , n channel mosfet transistor IRF640NSTRLPBF N-Channel Mosfet... |
Shenzhen Huahao Gaosheng Technology Co., Ltd
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Brand Name:INFINEON Model Number:IRF7342TRPBF ... IRF7103TRPBF N-Channel MOSFETProduct Introduction of Infineon IRF7342TRPBF N-Channel MOSFET 1. Product Overview Infineon IRF7103342TRPBF is a high-performance N-channel enhancement-mode metal-oxide-semiconductor field-effect transistor (MOSFET) developed... |
Berton Electronics Limited
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Brand Name:IRF Model Number:IRLML6402TRPBF Place of Origin:Original ...MOSFET T ♦Ultra Low On-Resistance ♦P-Channel MOSFET ♦SOT-23 Footprint ♦Low Profile (<1.1mm) ♦Available in Tape and Reel ♦Fast Switching These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs... |
Anterwell Technology Ltd.
Guangdong |
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Model Number:NTMFS4833NT1G Place of Origin:America Brand Name:ON ... N-channel MOSFET Transistor; 191 A; 30 V; 8-Pin SO-8FL 3. Trans MOSFET N-CH 30V 28A 8-Pin SO-FL T/R Technological Parameters: Polarity N - Channel Dissipated power 125 W Threshold voltage 1.5 V input capacitor 5600pF @12V Drain-source voltage 30 V |
Shenzhen Res Electronics Limited
Guangdong |
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Brand Name:REASUNOS Place of Origin:Guangdong, CN Product Description: The High Power MOSFET is an advanced semiconductor device designed to meet the demanding requirements of modern electronic applications. As a high power n channel MOSFET, this product is engineered to deliver exceptional performance... |
Reasunos Semiconductor Technology Co., Ltd.
Guangdong |
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Place of Origin:ShenZhen China Brand Name:OTOMO Model Number:8205A ...23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low ... |
Beijing Silk Road Enterprise Management Services Co.,LTD
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Brand Name:Original Factory Model Number:FP75R12N2T4BPSA1 Place of Origin:CN ...Mosfet Array, 2 N-Channel (Half Bridge) Module. Specification Of FF2MR12KM1HOSA1 Part Number FF2MR12KM1HOSA1 Series CoolSiC™ Configuration 2 N-Channel (Half Bridge) Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1200V (1.2kV) Current - |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Diodes Incorporated Model Number:W5500 Place of Origin:Taiwan ... Products Transistors - FETs, MOSFETs - Single Mfr Diodes Incorporated Series MOSFET Package Tape & Reel (TR) Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) |
Angel Technology Electronics Co
Hongkong |
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Brand Name:Infineon / IR Model Number:IRLML5203TRPBF Place of Origin:CHIAN ...Infineon / IR MOSFET MOSFT P-Ch -30V -3A 98mOhm 9.5nC Log Lvl 1.Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free RoHS Compliant, Halogen-Free 2.Description These P-channel MOSFETs from International ... |
Shenzhen Hongxinwei Technology Co., Ltd
Guangdong |
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Brand Name:INFINEON Model Number:IPD25N06S4L-30 Place of Origin:INFINEON ...Channel Mosfet SMD SMT Mounting Style IPD25N06S4L-30 Fet patch to-252 25A 60V MOSFET screen 4N06L30N channel DPAK-2 OptiMOS-T2 Product Attribute Attribute Value Search Similar Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: TO-252-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel... |
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
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Brand Name:Ti Model Number:FDS6681Z FDS6681Z Mosfet Power Transistor MOSFET 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state... |
ChongMing Group (HK) Int'l Co., Ltd
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Brand Name:Infineon Model Number:IRF640NPBF Place of Origin:Original Factory ...Channel 200V 18A Switching MOSFET Power Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs... |
Shenzhen ATFU Electronics Technology ltd
Guangdong |
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Brand Name:Original Brand Model Number:IRLML6402TRPBF Place of Origin:CN ... low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and |
Shenzhen Winsun Technology Co., Ltd.
Guangdong |