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All n channel skm igbt module wholesalers & n channel skm igbt module manufacturers come from members. We doesn't provide n channel skm igbt module products or service, please contact them directly and verify their companies info carefully.
| Total 23 products from n channel skm igbt module Manufactures & Suppliers |
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Model Number:SKM400GB128D Brand Name:Original Place of Origin:US Product Detail Product Information Transistor Polarity: N Channel DC Collector Current: 520A Collector Emitter Saturation Voltage Vce(on):1.2kV Collector Emitter Voltage V(br)ceo:1.2kV Transistor Case Style:SEMITRANS 3 No. of Pins:7Pins Operating ... |
Shenzhen Quanyuantong Electronics Co., Ltd.
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Brand Name:Original Factory Model Number:NXH300B100H4Q2F2PG Place of Origin:CN ... This high−density, integrated power module combines high−performance IGBTs with 1200 V SiC diode. Specification Of NXH300B100H4Q2F2PG Part Number NXH300B100H4Q2F2PG IGBT Type Trench Field Stop Configuration Dual, Common Source Voltage - |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Place of Origin:Japan Brand Name:FUJITSU Model Number:MG100Q2YS65H ...IGBT Module Silicon N Channel IGBT. Part NO: MG100Q2YS65H Brand: FUJITSU Date Code: 05+ Quality Warranty: 3 Months Mounting Type: Screws Overview We specialize in high power and power conversion modules of famous brands Categories include: Darlington Schottky, rectifier intelligent, IGBT, IPM, GTR, DC-DC, AC-DC rectifier and power supply and other modules... |
Mega Source Elec.Limited
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Brand Name:T O S Model Number:MIG30J103H Place of Origin:Japan ...Channel Lgbt Power Module IC MIG30J103H Electronics MIG30J103H Intelligent Power Module Silicon N Channel Lgbt MOTOR CONTROL APPLICATIONS Intelligent Power Module that include IGBT drive circuits, overcurrent, undervoltage lockout, and overtemperature protection. The Electrodes are Isolated from Case High speed type IGBT... |
Anterwell Technology Ltd.
Guangdong |
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Brand Name:Toshiba Model Number:MG200Q1US51 Place of Origin:Japan Toshiba IGBT Power Module MG200Q1US51 Transistor Module MG200Q1US51 Product Description Manufactured by: Toshiba America, Inc. Part number: MG200Q1US51 Part Category: Transistors Description: 300A, 1200V, N-CHANNEL IGBT Collector-Emitter Voltage: 1200V ... |
Guangzhou Sande Electric Co.,Ltd.
Hebei |
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Brand Name:Vishay Siliconix Model Number:SIHF12N50C-E3 Place of Origin:Multi-origin Product Name: SIHF12N50CE3 Manufacturer: Vishay Siliconix Description: N-Channel 500V (D-S) 175·C MOSFET Package Type: TO-263-3(D2PAK) RoHS Compliant: Yes Maximum Drain-Source Voltage (VDS): 500VMaximum Continuous Drain Current (ID): 12A Maximum Power ... |
Shenzhen Sai Collie Technology Co., Ltd.
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Brand Name:Semikron Model Number:SKM100GB125DN Place of Origin:Original Factory SKM100GB125DN, SKM100GB125DN, SKM100GB125DN, SKM100GB125DN, SKM100GB125DN, SKM100GB125 DN, SKM100 GB125DN, SKM100GB125DN, SKM100GB125DN Applications • Switched mode power supplies at fsw > 20 kHz • Resonant inverters up to 100 kHz • Inductive heating • ... |
Shenzhen Retechip Electronics Co., Ltd
Guangdong |
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Brand Name:infineon Model Number:BSM50GP120 Place of Origin:Germany ...IGBT Module Chassis Mount Module IGBT MODULE 1200V 50A Trans IGBT Module N-CH 1.2kV 50A nom 360W 24-Pin EconoPIM3 122x62mm Value Channel Type N Configuration Hex Maximum Collector Emitter Voltage 1200 V Maximum Continuous Collector Current 80 A Maximum Gate Emitter Voltage ±20 V Mounting Screw Mount Pin Count 24 Product Dimensions 122 x 62 x 17 mm Supplier Package EconoPIM3 Description 1. IGBT... |
DELI ELECTRONICS TECHNOLOGY CO.,LTD
Guangdong |
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Brand Name:Infineon Technologies Model Number:IPB044N15N5ATMA1 Place of Origin:Germany ...: Infineon Product Category: MOSFET Technology: Si Mounting Style: SMD/SMT Package / Case: TO-263-7 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 150 V Id - |
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
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Categories:IGBT Module Country/Region:china V375A48C600BL Isolated Module DC DC Converter 1 Output 48V 12.5A 250V - 425V Input Manufacturer: Vicor Product Category: Isolated DC/DC Converters - Through Hole RoHS: N Mounting Style: Through Hole Number of Outputs: 1 Output Output Power: 600 W Input ... |
Wisdtech Technology Co.,Limited
Guangdong |
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Brand Name:PI Model Number:2SC0435T2G1-17 Place of Origin:CHINA SCALE™-2 2SC0435T2G1-17 2SC0435T2G1-17 Preliminary Datasheet Dual-Channel Low-Cost SCALE™-2 IGBT and MOSFET Driver Core Abstract The low-cost SCALE™-2 dual-driver core 2SC0435T2G1-17 (Connector pin length of 3.1mm, suitable for PCB thickness of 2mm; ... |
Shenzhen Hongxinwei Technology Co., Ltd
Guangdong |
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Brand Name:Infineon Technologies Model Number:IMBG120R350M1HXTMA1 IMBG120R350M1HXTMA1 N-Channel 1200 V 4.7A (Tc) 65W (Tc) Surface Mount PG-TO263-7-12 Infineon Technologies 1200V CoolSiC™ Modules Infineon Technologies 1200V CoolSiC™ Modules are Silicon Carbide (SiC) MOSFET modules that offer good levels of efficiency and ... |
HongKong Wei Ya Hua Electronic Technology Co.,Limited
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Brand Name:Texas Instruments Model Number:TCAN1042GDQ1 PRODUCT DESCRIPTION Lastest Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1 IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Supply voltage (V) 4.5 to 5.5 Bus fault voltage... |
Guangzhou Topfast Technology Co., Ltd.
Guangdong |
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Brand Name:NVIDIA Model Number:G84-600-A2 Place of Origin:N/S IGBT Power Module NVIDIA G84-600-A2 Manufacturer: NVIDIA Model: G84-600-A2 Use: computer Package: BGA About US Shenzhen Yingxinyuan Electronic Technology Co., Ltd. was established in 2001. Headquartered in Shenzhen, branch offices were established in Hong Kong, Beijing, Dongguan, Shanghai and Suzhou. Yingxinyuan currently has more than 200 employees, 15% of which are senior technicians and channel... |
Yingxinyuan Int'l(Group) Ltd.
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Brand Name:IXYS Model Number:IXFN48N50 Place of Origin:CN Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 48A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs ... |
Shenzhen Koben Electronics Co., Ltd.
Guangdong |
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Model Number:IXFN38N100Q2 Place of Origin:original factory IXFN38N100Q2 HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated, Low Qg , Low Intrinsic Rg High dV/dt, Low trr VDSS = 1000 V ID25 = 38 A RDS(on)= 0.25 Ω trr ≤ 300 ns Features • Double metal process for low gate resistance • miniBLOC, with ... |
ChongMing Group (HK) Int'l Co., Ltd
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Model Number:SLIMDIP-S ... Minimum Operating Temperature - 30 C Maximum Operating Temperature + 115 C Configuration 6-Pack Transistor Polarity N and P-Channel Id - Continuous Drain Current 3.1 mA Operating Supply Voltage 300 V Subcategory Discrete Semiconductor Modules < DIPIPM > |
LU'S TECHNOLOGY CO., Ltd.
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Place of Origin:China Brand Name:ONSEMI Model Number:FDMQ8203 ... years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor,IGBT,PCBA, prototype,BOM Kitting. Sunbeam Electronics has a |
Sunbeam Electronics (Hong Kong) Limited
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Brand Name:Yokogawa Model Number:PW302/S4 Place of Origin:Japan ...Module About Yokogawa Module High-Speed 200 MS/s 14-Bit Isolation Module (2 channels). IsoPRO technology enables 1kV isolated measurements in combination with the 700929, 702902, or 701947 probes and is designed for inverter/IGBT-related applications in mind. Using high-speed optical fiber-based transmission, the module... |
TLU Technology Co., LTD
Fujian |
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Brand Name:MOLEX Model Number:2152722603 Place of Origin:USA Product Description: Discrete Semiconductor is a type of semiconductor unit which comes in various sizes, from 5mm*5mm to 10mm*10mm, with weights range from 0.2g to 0.5g. It has power ratings up to 2W and is available in different packages, including DIP, ... |
Shenzhen Xinyuanpeng Technology Co., Ltd.
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