n type gaas epi wafer

Brand Name:PAM-XIAMEN

Place of Origin:China

... crystal growth technology, vertical gradient freeze(VGF) and (GaAs)Gallium Arsenide wafer processing technology. The required electrical properties are obtained by adding dopants such as silicon or zinc. The result is n-type or p-type high-resistance (

Brand Name:ZMSH

Model Number:GaP

Place of Origin:China

2” S Dopped GaP Semiconductor EPI Wafer N Type P Type 250um 300um Light-Emitting Diodes Description: Gallium phosphide (GaP) is a group Ⅲ-V compound. The appearance is orange-red transparent ...

Brand Name:ZG

Model Number:MS

Place of Origin:CHINA

GaAs Based Epi Wafer We provides MBE / MOCVD epitaxial growth of custom structure on GaAs substrate for microelectronics , optoelectronics and RF Microwave applications , in diameter Ø 3" to Ø 4” . With our extensive MOCVD experience , we can grow binary alloy ( LT-GaAs , AlAs ) or ternary alloy ( AlGaAs , InGaAs ,GaAsP , InGaP ) on GaAs...

Brand Name:ZMSH

Model Number:S-C-N

Place of Origin:CN

...type prime grade GaAs wafer for epitaxial growth GaAs wafer (Gallium Arsenide) is an advantageous alternative to silicon that has been evolving in the semiconductor industry. Less power consumption and more efficiency offered by this GaAs wafers are attracting the market players to adopt these wafers, thereby increasing the demand for GaAs wafer. Generally, this wafer...

Country/Region:china

...Wafer Manufacturer 4 inch P Grade SiC Wafer Factory Homray Material Technology offers silicon carbide SiC n-type and p-tpye epitaxial wafer. SiC epi wafer is mainly used for Schottky diodes, metal-oxiHomray Material Technology offersthe best price on the market for high quality SiC wafers and silicon carbide epitaxial wafers...