n type sic power mosfet

Place of Origin:CN

Brand Name:Original Factory

Model Number:MSCSM170HRM075NG

Automotive IGBT Modules MSCSM170HRM075NG 1700V T-Type SiC Power MOSFET Modules [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + ...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

...MOSFETs (SiC Metal-Oxide-Semiconductor Field-Effect Transistor) are high-power and high-efficiency devices with a high frequency and low resistance. They are based on the national military standard production line, making the process stable and reliable. Silicon Carbide MOSFETs are composed of a Silicon Carbide and Metal Oxide Semiconductor Field Effect Transistor. They are designed to handle high power

Brand Name:TOSHIBA

Model Number:TPC8111

Place of Origin:Taiwan

TPC8111 Field Effect Transistor Silicon P Channel MOS Type HEXFET Power MOSFET Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS...

Brand Name:TOSHIBA

Model Number:TPC8111

Place of Origin:Taiwan

TPC8111 Field Effect Transistor Silicon P Channel MOS Type HEXFET Power MOSFET Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS...

Brand Name:ON

Model Number:NTH4L020N090SC1

Brand Name:zmkj

Model Number:6h-n, 4h-semi

Place of Origin:china

... device, 4h-semi 4h-N customized square shape sic wafers, 10 mm x 10 mm 6H Semi-Insulating Type SiC, Research Grade, SiC Crystal Substrate Application areas 1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN,

Place of Origin:China

...% Color Black Resistence Uniform resistance Power Adjustable Working temperature up to 1625C Recommend Products SGR Type Double spiral type sic heater could max reach 1625 ℃ SG Type Single spiral type sic heater could max reach 1625 ℃ U Type Ideal for

Brand Name:PAM-XIAMEN

Place of Origin:China

... generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC , N-type , Nitrogen doped , and

Brand Name:ZMSH

Model Number:N-type SiC on Si Compound Wafer

Place of Origin:China

...type SiC on Si Compound Wafer 6inch 150mm SiC type 4H-N Si type N or P N-type SiC on Si Compound Wafer abstract N-type silicon carbide (SiC) on silicon (Si) compound wafers have garnered significant attention due to their promising applications in high-power and high-frequency electronic devices. This study presents the fabrication and characterization of N-type SiC...

Place of Origin:China

Brand Name:SONGYU

...Type SiC Heating element The M-type silicon carbide rod is available in different sizes and power ratings to meet the diverse needs of various applications. Whether it's for small-scale laboratory use or large-scale industrial production, there is an M-type...

Brand Name:KEGU

Place of Origin:China

Model Number:Customizable

...Type Sic Heating Element For Various Furnaces Description Highlight: SGR Type Sic Heating Element , Various Furnaces Sic Heating Element , Double Spiral Sic Heating Element Product Description Specification Material Silicon Carbide Powder Voltage 220 volts, 380 volts, 110 volts Shapes U Shape', W Shape, Spiral Shape, Straight Type, L Type, etc SiC Content ＞99% Color Black Resistence Uniform resistance Power...

Brand Name:Infineon

Model Number:IPB200N25N3

Place of Origin:CHINA

... Threshold Yes Automotive No PPAP No Product Category Power MOSFET Configuration Single Process Technology OptiMOS 3 Channel Mode Enhancement Channel Type N Number of Elements per Chip 1 Maximum Drain Source Voltage (V) 250 Maximum Gate Source Voltage (V)

Brand Name:STMicroelectronics

Model Number:STP100N8F6

Place of Origin:Shenzhen, China

...MOSFET N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 Power MOSFET in a TO-220 package General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Distinctive Characteristics : Part No: STP100N8F6 Description: Trans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-220 Tube Product Category Power

Brand Name:Infineon Technologies

Model Number:IRF4104SPBF

Place of Origin:Mult-origin

...0V • Operating Temperature Range: -55°C to +175°C • Mounting Type: Through Hole • Transistor Type: MOSFET N-Channel • Power Dissipation: 75W • Voltage - Supply: - • Gate Charge: 75nC • FET Feature: Standard • Dynamic Catalog: MOSFET Why

Brand Name:ON Semiconductor

Model Number:FDMC510P

Place of Origin:CHINA

...POWER MOSFET 2.3W 41W Surface Mount 8-MLP General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been optimized for RDS(ON), switching performance and ruggedness. FET Type P-Channel Technology MOSFET...

Brand Name:Hua Xuan Yang

Model Number:19P03 D-U-V

Place of Origin:ShenZhen China

...Type Transistor , 19P03 D-U-V High Voltage Power Mosfet N Type Transistor Introduction A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle high-level powers. The power MOSFET’s are constructed in a V configuration. Therefore, it is also called as V-MOSFET, VFET. The symbols of N- channel & P- channel power MOSFET are shown in the below figure. N Type...

Brand Name:original

Model Number:CLA50E1200HB

Place of Origin:Original Factory

... HIGH POWER MOSFET TRANSISTORS / THYRISTOR FOR LINE FREQUENCY 1200V 50A Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: Circuit Control Mounting Type: Through Hole Package: TO247 High Light: n channel mosfet transistor...

Place of Origin:Malaysia

Brand Name:IXYS

Model Number:IXFN27N80

... Tube FET Type MOSFET N-Channel, Metal Oxide FET Feature Standard Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ ...

Categories:Discrete Semiconductors

Country/Region:china

POWER MOSFET TRANSISTOR APT94N65B2C3G APT94N65B2C3G Microsemi Corporation (now Microchip) MOSFET N-CH 650V 94A T-MAX Product Technical Specifications Category Integrated Circuits (ICs) 　 APT94N65B2C3G POWER MOSFET TRANSISTOR Mfr MICROSEMI/MICROCHIP Series - Package Tube Product Status Obsolete Mounting Type Through Hole Operating Temperature - Supplier Device Package APT94N65B2C3G POWER MOSFET TRANSISTOR Package / Case MOSFET...

Brand Name:Original Factory

Model Number:IPT020N10N5ATMA1

Place of Origin:China

Power MOSFET Original Integrated Circuit IPT020N10N5ATMA1 Product Description Less paralleling required Increased power density Reduced switching and conduction losses Product Specifications Part Number: IPT020N10N5ATMA1 FET Type: N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 273W (Tc) Series: OptiMOS™5 Technology: MOSFET...