n type silicon wafer for power devices

Brand Name:ZMSH

Place of Origin:China

...Type sic wafer 4inch 6inch Z grade P grade D grade Off axis: 2.0°-4.0°toward P-type doping 4H/6H P-Type sic wafer's abstract 4H and 6H P-type silicon carbide (SiC) wafers are critical materials in advanced semiconductor devices, especially for high-power...

Brand Name:ZMSH

Model Number:SiC 4H-P

Place of Origin:CHINA

...silicon carbide wafer 4H-P type on axis 0°Used to manufacture high power devices 4H-P type silicon carbide substrate is a semiconductor material with a hexagonal lattice structure, and P-type conductivity is obtained by a specific doping process (such as doping aluminum and other elements). Such substrates typically have high doping concentrations and low resistivity, making them ideal for manufacturing high-power devices

Brand Name:PAM-XIAMEN

Place of Origin:China

... generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC , N-type , Nitrogen doped , and