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All ne6510179a t1 a power mosfet wholesalers & ne6510179a t1 a power mosfet manufacturers come from members. We doesn't provide ne6510179a t1 a power mosfet products or service, please contact them directly and verify their companies info carefully.
| Total 16 products from ne6510179a t1 a power mosfet Manufactures & Suppliers |
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Categories:RF FETs, MOSFETs Country/Region:china RF Mosfet 3.5 V 200 mA 1.9GHz 10dB 32.5dBm 79A |
Beijing Silk Road Enterprise Management Services Co.,LTD
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Categories:RF FETs, MOSFETs Country/Region:china RF Mosfet 3.5 V 200 mA 1.9GHz 10dB 32.5dBm 79A |
Beijing Silk Road Enterprise Management Services Co.,LTD
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Brand Name:VISHAY Model Number:SI2301CDS-T1-E3 Place of Origin:Philippines SI2301CDS - T1 - E3 high power mosfet transistors P - Channel 20-V (D-S) MOSFET P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID... |
Anterwell Technology Ltd.
Guangdong |
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Brand Name:VISHAY Model Number:SI2301CDS-T1-E3 Place of Origin:Philippines SI2301CDS - T1 - E3 high power mosfet transistors P - Channel 20-V (D-S) MOSFET P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID... |
ChongMing Group (HK) Int'l Co., Ltd
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Brand Name:VISHAY Model Number:SI9986DY-T1-E3 Place of Origin:CHINA SI9986DY-T1-E3 SI9986DY SOP8 Motor Driver Power MOSFET DESCRIPTION The Si9986 is an integrated, buffered H-bridge with TTL compatible inputs and the capability of delivering a continuous 1 A at VDD = 12 V (room temperature) at switching rates up to 200 kHz... |
Shenzhen Koben Electronics Co., Ltd.
Guangdong |
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Brand Name:Vishay Siliconix Model Number:SI4488DY-T1-E3 Place of Origin:original ... voltage of 30V, a gate-source voltage of ±20V, a drain current of 61A, a drain-source on-state resistance of 0.312mΩ, and a maximum power dissipation of 85W. This MOSFET is ideal for high temperature and high voltage applications. Features: • |
Shenzhen Sai Collie Technology Co., Ltd.
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Brand Name:Vishay Model Number:SI2333DDS-T1-GE3 Place of Origin:China ...T1-GE3 andnbsp; FEATURES andbull; TrenchFETandreg; Power MOSFET andbull; 100 % Rg Tested andbull; Material categorization: For definitions of compliance please see andnbsp; APPLICATIONS andbull; Smart Phones and Tablet PCs - Load Switch - Battery Switch andnbsp; Overview The Sl2333DDS-T1-GE3 is an advanced 20V P-channel MOSFET in an ultra-compact sC-70-3package, optimized for space-constrained, high-efficiency power... |
TOP Electronic Industry Co., Ltd.
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Place of Origin:MALAYSIA Brand Name:MOTOROLA Model Number:NE5520379A-T1 NE5520379A-T1 is aNECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET. Part NO: NE5520379A-T1 Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD ... |
Mega Source Elec.Limited
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Categories:Vishay Ic Country/Region:china ...MOSFET Brand: Vishay Product Type: MOSFET Subcategory: MOSFETs Here is an English introduction for the product code SQJ952EP-T1-BE3: SQJ952EP-T1-BE3 This high-power industrial electric motor is designed for general purpose continuous duty applications requiring up to 40 hp power input at 110-120V. Model: SQJ952EP-T1... |
ZhongHao Industry Limited
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Brand Name:original Model Number:SI4840BDY-T1-GE3 Place of Origin:original SI4840BDY-T1-GE3 SMD / SMT MOSFET 40V Vds 20V Vgs SO-8 MouseReel FEATURES • TrenchFET® power MOSFET • 100 % Rg and UIS tested Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SOIC-8 Transistor Polarity: N-... |
Walton Electronics Co., Ltd.
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Place of Origin:US Brand Name:Original Model Number:SI2399DS-T1-GE3 Product Detail Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, ... |
Shenzhen Quanyuantong Electronics Co., Ltd.
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Place of Origin:Original ... (Qg) (Max) @ Vgs 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds - Vgs (Max) ±12V FET Feature - Power Dissipation (Max) 1.6W (Ta), 2.8W (Tc) Rds On (Max) @ Id, Vgs 54 mOhm @ 4.3A, |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Brand Name:VISHAY Model Number:SI7911DN-T1-E3 Place of Origin:CHINA Product Technical Specifications EU RoHS Compliant ECCN (US) EAR99 Part Status Obsolete Automotive No PPAP No Product Category Power MOSFET Configuration Dual Dual Drain Channel Mode Enhancement Channel Type P Number of Elements per Chip 2 Maximum Drain ... |
Sunbeam Electronics (Hong Kong) Limited
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Brand Name:WINNER Model Number:WNE T2 Place of Origin:CHINA ...Power Electronics in Automotive and Computing Equipment *The welding wire is manufactured from 6N high - purity aluminum material, with a certain proportion of trace elements added. *It is widely applied in the packaging of power semiconductors, including MOSFET, IGBT, Thyristor, GTO, Diode, etc. Al Wire for Power Type Ø Diameter (μm) Breaking Load BL(gf) Elongation EL(%) Length Meters WNE T1... |
SICHUAN WINNER SPECIAL ELECTRONIC MATERIALS CO., LTD.
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Categories:Full Half-Bridge Drivers Country/Region:china Half Bridge Driver Synchronous Buck Converters Power MOSFET PowerPAK® MLP55-31L |
Beijing Silk Road Enterprise Management Services Co.,LTD
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Brand Name:Original Factory Model Number:MC34VR500V1ES Place of Origin:CN .../DC regulator solution, with integrated power MOSFETs ideally suited for the LS1/T1 family of communication processors. Integrating four switching and five linear regulators, the MC34VR500V1ES provides power to the complete system, including the processor |
ShenZhen Mingjiada Electronics Co.,Ltd.
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