| Sign In | Join Free | My futurenowinc.com |
|
All npn silicon power transistor wholesalers & npn silicon power transistor manufacturers come from members. We doesn't provide npn silicon power transistor products or service, please contact them directly and verify their companies info carefully.
| Total 1551 products from npn silicon power transistor Manufactures & Suppliers |
|
|
|
Place of Origin:PHILIPPINE Brand Name:ON Semiconductor Model Number:BUV21G Quick Detail: SWITCHMODE Series NPN Silicon Power Transistor Description: This device is designed for high speed, high current, high power applications. 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS − 250 WATTS Applications: • High DC Current ... |
Mega Source Elec.Limited
|
|
|
Categories:RF Transistors Country/Region:china ... Series 20 AMPERE NPN Silicon Power Transistor 400- 500 VOLTS 175 WATTS Category Transistor Mfr Motololar Series - Part Status - Mounting Type - The MJ13333 transistor is designed for high voltage, high–speed, power switching in inductive circuits whe... |
Wisdtech Technology Co.,Limited
Guangdong |
|
|
Place of Origin:ShenZhen China Brand Name:Hua Xuan Yang Model Number:MMBTA44 ...Transistors MMBTA44 TRANSISTOR (NPN) FEATURE Switching Transistor Marking :2X MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power... |
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong |
|
|
Brand Name:ONSEMI Model Number:BD681 Place of Origin:Malaysia ...NPN Darlington Power Transistors Medium Power Switching ■ SGS-THOMSON PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES ■ MONOLITHIC DARLINGTON CONFIGURATION ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN power transistors... |
Anterwell Technology Ltd.
Guangdong |
|
|
Place of Origin:ShenZhen China Brand Name:OTOMO Model Number:A42 ...Transistors A42 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :D965A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 310 V VCEO Collector-Emitter Voltage 305 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 200 mA ICM Collector Current -Pulsed 500 mA PC Collector Power... |
Beijing Silk Road Enterprise Management Services Co.,LTD
|
|
|
Model Number:TIP41C Place of Origin:original factory ...SILICON POWER TRANSISTORS ■ COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The TIP41A, TIP41B and TIP41C are silicon Epitaxial-Base NPN power transistors mounted in Jedec TO-220 plastic package. They are intented for use in medium power linear and switching applications. The TIP41A and TIP41C complementary PNP types are TIP42A and TIP42C respectively ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN |
ChongMing Group (HK) Int'l Co., Ltd
|
|
|
Brand Name:CJ Model Number:BCX56-10 Place of Origin:CN BCX56-10# 80V 1A 1.25W NPN medium power transistors SOT89 Features ■ High current ■ Two current gain selections ■ High power dissipation capability Applications ■ Linear voltage regulators ■ Low-side switches ■ MOSFET drivers ■ Amplifiers ... |
DELI ELECTRONICS TECHNOLOGY CO.,LTD
Guangdong |
|
|
Categories:Electronic Semiconductors Country/Region:china ..., high gain, and high-speed performance in compact packages. Key Features: Type: NPN RF Transistor Transition Frequency (ft): 25 GHz Noise Figure (NF): 0.75 dB at 2 GHz Gain (Gmax): 21 dB at 1.8 ... |
Shenzhen Chive Electronics Co., Ltd.
Guangdong |
|
|
Place of Origin:US Brand Name:Original Model Number:TIP41C ... Transistor Type NPN Current - Collector (Ic) (Max) 6A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 1.5V @ 600mA, 6A Current - Collector Cutoff (Max) 700µA DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 3A, 4V Power - ... |
Shenzhen Quanyuantong Electronics Co., Ltd.
|
|
|
Model Number:FQP6N60C Place of Origin:United States Brand Name:Original #detail_decorate_root .magic-0{width:750px}#detail_decorate_root .magic-1{overflow:hidden;width:750px;height:405.95399188092017px;margin-top:0;margin-bottom:0;margin-left:0;margin-right:0}#detail_decorate_root .magic-2{margin-top:-3px;margin-left:0;width:... |
ShenZhen QingFengYuan Technology Co.,Ltd.
|
|
|
Brand Name:Infineon Technologies Model Number:IRF3205PBF Place of Origin:Original ...Silicon Npn Power Transistors 55V 110A 8.0mΩ Power MOSFET Npn Power Transistor Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power... |
Shenzhen Retechip Electronics Co., Ltd
Guangdong |
|
|
Brand Name:VISHAY Model Number:3DU5C Place of Origin:Original Factory ... NPN Silicon Phototransistor with Metal Encapsulated Features : NPN Silicon Phototransistor; Model : 3DU5C Working Voltage(Max.) : 10V; Reverse Breakdown Voltage : 15V; Dark Current : 0.3uA Photocurrent : 0.5-1mA; Power ... |
Shenzhen ATFU Electronics Technology ltd
Guangdong |
|
|
Model Number:BC847B BC847B SOT-23 1F 1FW SOT23 SMD Transistor new and original IC Chipset BC807-40 BC817-40 BC846B BC856B BC847B BC857C BC84 BC847...-BC850 NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-... |
LU'S TECHNOLOGY CO., Ltd.
|
|
|
Brand Name:original Model Number:PBSS4160T,215 Place of Origin:Original Manufacturer NPN LOW VCESAT MOSFET POWER TRANSISTOR PNP COMPLEMENT PBSS4160T Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: NPN Mounting Type: Surface Mount Package: SOT23 High Light: n channel mosfet transistor , n channel transistor PBSS4160T NPN low VCEsat transistor... |
Shenzhen Huahao Gaosheng Technology Co., Ltd
|
|
|
Brand Name:SAIKELI Model Number:MJE3055T Place of Origin:China ...Silicon Plastic Power Transistors Description 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS − 75 WATTS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor... |
Shenzhen Sai Collie Technology Co., Ltd.
|
|
|
Brand Name:UCHI Model Number:3904W /3906W Place of Origin:Dongguan China ...NPN and PNP Silicon FEATURES -These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications. - Pb-Free Package is available. GENERAL PURPOSE AMPLIFIER TRANSISTORS... |
Guangdong Uchi Electronics Co.,Ltd
Guangdong |
|
|
Model Number:PBSS4160T,215 Place of Origin:CN ...NPN low VCEsat transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • Reduces printed-circuit board area required • Cost effective replacement for medium power transistor BCP55 and BCX55. APPLICATIONS • Major application segments: – Automotive 42 V power... |
Shenzhen Koben Electronics Co., Ltd.
Guangdong |
|
|
Brand Name:Original Model Number:PXT8050 Place of Origin:Original of place Mosfet power transistor PXT8050 transistor (NPN) SOT-89-3L SMD Model number PXT8050 D/ C Newest Brand Original Package type Surface Mount Service ... |
Shenzhen Weitaixu Capacitor Co.,Ltd
Guangdong |
|
|
Categories:Diodes Transistors Country/Region:china MJE182 POWER TRANSISTOR Bipolar (BJT) Single Transistor NPN 80V TO-225 MJE182G Bipolar (BJT) Single Transistor NPN 80V 3A 1.5W TO-225 Through Hole Most Popular Power Bipolar Transistors JANTX2N2222AUB BCP56-16T1G MJD122T4G BCX5616TA PZT2907AT1G BCP56-16 ... |
Angel Technology Electronics Co
Hongkong |
|
|
Brand Name:Huixin Model Number:MMDT3946DW SOT-363 Place of Origin:China ... Planar Die Construction Ideal for Low Power Amplification and Switching MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage ... |
Guangdong Huixin Electronics Technology Co., Ltd.
Guangdong |