| Sign In | Join Free | My futurenowinc.com |
|
All p channel power mosfet 60v wholesalers & p channel power mosfet 60v manufacturers come from members. We doesn't provide p channel power mosfet 60v products or service, please contact them directly and verify their companies info carefully.
| Total 74 products from p channel power mosfet 60v Manufactures & Suppliers |
|
|
|
Place of Origin:China Brand Name:ONSEMI Model Number:ATP113 High Power MOSFET ATP113 P-Channel Power MOSFET, -60V, -35A, 29.5mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for ... |
Sunbeam Electronics (Hong Kong) Limited
|
|
|
Brand Name:Infineon Model Number:BSC016N06NSATMA1 Place of Origin:original BSC016N06NSATMA1 MOSFET Power Electronics N-Channel OptiMOSTM Power-MOSFET 60V FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 30A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min ... |
Shenzhen Sai Collie Technology Co., Ltd.
|
|
|
Brand Name:original Model Number:NX7002AK,215 ...Channel Trench MOSFET 60V 190mA Single SMD/SMT Products Description: The NX7002AK is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. Very Fast Switching ESD Protection Upto 1.5kV MOSFET N-CH 60V 190MA TO236AB Trans MOSFET N-CH 60V... |
Shenzhen Res Electronics Limited
Guangdong |
|
|
Brand Name:ST Microelectronics Model Number:STM32F051K6U6 Place of Origin:CHINA ...Channel Power MOSFET 60V 60A 110W (Tc) Through Hole Switching application Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size”™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. FET Type N-Channel... |
Shenzhen Koben Electronics Co., Ltd.
Guangdong |
|
|
Brand Name:STMicroelectronics Model Number:STP55NF06FP Place of Origin:China STP55NF06FP 55A 60V N-Channel Power MOSFET with andlt;0.02andOmega; RDS(on) TO-220FP Avalanche Rated Logic Level High Speed Switching and Low Gate Charge for Efficient Power Control andnbsp; Features 1:Low On-Resistance (Low RDS(on)): Extremely low maximum... |
TOP Electronic Industry Co., Ltd.
|
|
|
Brand Name:Anterwell Model Number:RFP70N06 Place of Origin:original factory RFG70N06, RFP70N06, RF1S70N06SM 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of ... |
Anterwell Technology Ltd.
Guangdong |
|
|
Model Number:RFP70N06 Place of Origin:original factory RFG70N06, RFP70N06, RF1S70N06SM 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of ... |
ChongMing Group (HK) Int'l Co., Ltd
|
|
|
Brand Name:Onsemi Model Number:2N7002KT1G 2V7002KT1G 2N7002KT7G Place of Origin:CHINA 2N7002K 2V7002K Signal mosfet N-Channel Small 60V 380mA semiconductor components Discrete&Power Modules 2N7002K 2V7002K N-Channel Small Signal MOSFET 60V 380mA Applications: Low Side Load Switch Level Shift Circuits DC−DC Converter Portable Applications... |
Angel Technology Electronics Co
Hongkong |
|
|
Brand Name:Onsemi Model Number:2N7002KT1G 2V7002KT1G 2N7002KT7G Product Description 2N7002K 2V7002K Signal mosfet N-Channel Small 60V 380mA semiconductor components Discrete&Power Modules 2N7002K 2V7002K N-Channel Small Signal MOSFET 60V 380mA Applications: Low Side Load Switch Level Shift Circuits DC−DC Converter ... |
Guangzhou Topfast Technology Co., Ltd.
Guangdong |
|
|
Brand Name:HT Model Number:F7N65L TO-220F-3L Place of Origin:China ...CHANNEL POWER MOSFET 7A 650V Applications In Switching Power Supplies And Adaptors 7A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET... |
Shenzhen Hunt Electronics Co., Ltd
Guangdong |
|
|
Brand Name:Hua Xuan Yang Model Number:2N60 Place of Origin:ShenZhen China ...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. |
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong |
|
|
Brand Name:original Model Number:STP45N10F7 Place of Origin:Original Manufacturer ... Contact Us High Light: STP45N10F7 Integrated IC Chip , N Channel Power MOSFETs , 100V N channel Power MOSFETs STP45N10F7 MOSFET N-channel 100 V 0 013 Ohm typ 45 A STMicroelectronics STP45N10F7 is a power field-effect transistor (MOSFET) chip suitable for |
Shenzhen Huahao Gaosheng Technology Co., Ltd
|
|
|
Place of Origin:China Brand Name:Lingxun Product Description: Manufactured by Lingxun Microelectronics, a leading manufacturer of high-quality semiconductor devices, this MOSFET is brand new and unused, ensuring reliable and consistent performance. Designed and tested to meet strict quality ... |
Guangdong Lingxun Microelectronics Co., Ltd
Guangdong |
|
|
Brand Name:Original Factory Model Number:MSC750SMA170S Place of Origin:CN ...Channel Power MOSFET MSC750SMA170S Integrated Circuit Chip TO-268-3 Product Description Of MSC750SMA170S MSC750SMA170S is a 1700 V, 750 mΩ Silicon Carbide N-Channel Power MOSFET in a TO-268 (D3PAK) package, Surface Mount. Specification Of MSC750SMA170S Part Number: MSC750SMA170S Technology: SiC Mounting Style: SMD/SMT Package / Case: D3PAK-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel... |
ShenZhen Mingjiada Electronics Co.,Ltd.
|
|
|
Brand Name:STMicroelectronics Model Number:STP15810 Place of Origin:Shenzhen, China ... charge for faster and more efficient switching. Features : 100% avalanche tested Ultra low on-resistance Distinctive Characteristics : Part No: STP15810 Description: N Channel Power MOSFET Rad Hardened: No |
Shenzhen Weitaixu Capacitor Co.,Ltd
Guangdong |
|
|
Brand Name:IR Original Model Number:IR21094STRPBF Place of Origin:Original & New IR21094STRPBF high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS... |
Shenzhen ATFU Electronics Technology ltd
Guangdong |
|
|
Brand Name:IR Model Number:IRFP260MPBF Place of Origin:USA IRFP260MPBF N - Channel Power Mosfet 200V 50A Through Hole Metal Oxide TO247-3 FEATURES Type : MOSFETS-Single Packaging :Tube Part state: ACTIVE FET type : N - Channel Technology : MOSFET (Metal Oxide) Drain-source voltage (VDSS) : 200V Current - ... |
DELI ELECTRONICS TECHNOLOGY CO.,LTD
Guangdong |
|
|
Brand Name:Original brand Model Number:IPT004N03LATMA1 Place of Origin:China ...IC Integrated Circuits Chip N Channel Power MOSFET Product Description Optimizedfore-fuseandORingapplication Verylowon-resistanceRDS(on)@VGS=4.5V 100%avalanchetested Superiorthermalresistance N-channel QualifiedaccordingtoJEDEC1)fortargetapplications Pb-... |
Shenzhen Tengshengda ELECTRIC CO., LTD.
Guangdong |
|
|
Brand Name:REASUNOS Place of Origin:Guangdong, CN Ultra Small Package Superjunction Power MOSFET with Large EMI Margin *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, canvas, ... |
Reasunos Semiconductor Technology Co., Ltd.
Guangdong |
|
|
Place of Origin:US Brand Name:Original Model Number:IRFP4710PBF, IRFP460PBF ...Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 72A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 14 mOhm @ 45A, 10V Vgs(th) (Max) @ Id 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6160pF @ 25V Power... |
Shenzhen Quanyuantong Electronics Co., Ltd.
|