p mosfet sot23

Brand Name:original

Model Number:IRLML6401TRPBF

...MOSFET SOT23-3 IRLML6401TRPBF Products Description: MOSFET; Power; P-Ch; VDSS -12V; RDS(ON) 0.05Ohm; ID -4.3A; Micro3; PD 1.3W; VGS +/-8V Trans MOSFET P-CH 12V 4.3A 3-Pin Micro T/R Transistor: P-MOSFET; unipolar; logic level; -12V; -4.3A; 1.3W These P-Channel MOSFETs...

Brand Name:Anterwell

Model Number:FQP30N06

Place of Origin:original factory

Stock Offer (Hot Sell) Part No. Quantity Brand D/C Package MCIMX535DVV1C 1066 FREESCALE 14+ BGA MCIMX6S7CVM08AC 769 FREESCALE 16+ BGA MCP100T-270I/TT 68000 MICROCHIP 15+ SOT23-3 MCP100T-315I/TT 57000 MICROCHIP 16+ SOT23-5 MCP100T-450I/TT 58000 MICROCHIP 10...

Brand Name:Infineon

Model Number:2N7002H6327XTSA2

Place of Origin:original

2N7002H6327XTSA2 MOSFET Power Electronics N-channel OptiMOS™ Small-Signal-Transistor Package SOT23 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 300mA (Ta) Drive Voltage (Max ...

Place of Origin:China

Brand Name:ONSEMI

Model Number:2N7002LT1

High Power MOSFET 2N7002LT1 SOT23, N-Ch Mosfet - 60V 115MA 7.5Ohm [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new...

Brand Name:original

Model Number:PBSS4160T,215

Place of Origin:Original Manufacturer

...MOSFET POWER TRANSISTOR PNP COMPLEMENT PBSS4160T Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: NPN Mounting Type: Surface Mount Package: SOT23 High Light: n channel mosfet transistor , n channel transistor PBSS4160T NPN low VCEsat transistor in a SOT23...

Model Number:FQP30N06

Place of Origin:original factory

Stock Offer (Hot Sell) Part No. Quantity Brand D/C Package MCIMX535DVV1C 1066 FREESCALE 14+ BGA MCIMX6S7CVM08AC 769 FREESCALE 16+ BGA MCP100T-270I/TT 68000 MICROCHIP 15+ SOT23-3 MCP100T-315I/TT 57000 MICROCHIP 16+ SOT23-5 MCP100T-450I/TT 58000 MICROCHIP 10...

Brand Name:Hua Xuan Yang

Model Number:HXY3407 SOT23

Place of Origin:ShenZhen China

HXY3407 SOT23 Mosfet Power Transistor Description

Brand Name:INFINEON

Model Number:IRLML6401TRPBF

INFINEON Chip IRLML6401TRPBF MOSFET P-CH 12V 4.3A SOT23 Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-...

Brand Name:ON

Model Number:BSS123LT1G

Place of Origin:ON

BSS123LT1G SOT23 Small Signal Relays 100V 170mA N Channel Transistor BSS123LT1G SOT23 Enhanced FET MOSFET 100V 170mA N-Channel Manufacturer: onsemi Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-23-3 ...

Brand Name:Alpha Omega Semiconductor Inc

Model Number:AO3402

... switch or other general applications. Basic data ​1. product model:AO3402 2. Product features:Switching power supply protection 3. wrap:SOT23-3 4. FET type: Single N-Channel MOS 5

Brand Name:UCHI

Model Number:6206-3.3V

Place of Origin:Dongguan China

SOT-23 662K 6206 3.3V SOT23-3 SMD voltage regulator IC FEATURES - Fast switching speed. - High conductance - Connected in series - Surface mount package ideally suited for automatic insertion APPLICATIONS - For general purpose switching appilication. ...

Place of Origin:US

Brand Name:Original

Model Number:AO3401A

Product Detail Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max...

Brand Name:DIODES

Model Number:2N7002K-7

Place of Origin:China

2N7002K-7 SOT23 Discrete Semiconductor Single FET, MOSFET Brand New And Original Integrated Circuit Chip PRODUCT DESCRIPTION Part number 2N7002K-7 is manufactured by DIODES and distributed by Stjk. As one of the leading distributors of electronic products...

Model Number:PBSS4160T,215

Place of Origin:CN

PBSS4160T NPN low VCEsat transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • Reduces ...

Brand Name:TOSHIBA

Model Number:TPC8063-H

Place of Origin:JAPAN

... Part Number TPC8063-H Package Tape & Reel (TR) Technology MOSFET (Metal Oxide) Product Status Obsolete Description MOSFET N-CH 600V 40MA SOT23-3 Drain to Source Voltage (Vdss) 600 V Detailed Description N-Channel 600 V 40mA (Ta) 1.39W (Ta) Surface Mount

Brand Name:Monolithic Power Systems

Model Number:MP2565DN-LF-Z

Place of Origin:China

...Cycle Current Limit Thermal Shutdown SOT23-6 Package andnbsp; FEATURES andbull; 120andmu;A Quiescent Current andbull; Wide 4.5V to 50V Operating Input Range andbull; 220mΩ Internal Power MOSFET andbull; Up to 4MHz Programmable Switching Frequency andbull...

Brand Name:Original

Model Number:MP2161GJ-Z

... is a monolithic step-down switch mode converter with built-in internal power MOSFETs. It achieves 2A continuous output current from a 2.5V to 6V input voltage with excellent load and line regulation. The output voltage can be ...

Brand Name:Original

Model Number:IRLML2244TRPBF

Place of Origin:Original

MOSFET IRLML2244TRPBF Chips Diode Transistor Integrated Circuits PRODUCT DESCRIPTION MOSFET P-CH 20V 4.3A SOT23 PRODUCT PROPERTIES Mfr Infineon Technologies Series HEXFET Product Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to ...

Brand Name:Onsemi

Model Number:FDV303N

Place of Origin:USA

FDV303N Digital FET N-Channel Onsemi RF Transistors Manufacturer: onsemi Product Category: MOSFETs RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source...

Brand Name:ams-OSRAM USA INC.

Model Number:AS1353-18-T

Product Details General Description The AS1353/AS1356 are high-performance, fixed-voltage linear LDOs designed for use with capacitors of 1 to 10µF. The devices can deliver superior performance even under low dropout conditions when the power transistor ...