power consumption low rds on mosfet

Brand Name:Lingxun

Place of Origin:China

... for different system designs. Its low Rds(ON) resistance ensures efficient power transfer, reducing power loss and heat dissipation. Our Low Voltage MOSFET is an ideal solution for applications requiring high efficiency and low power consumption.

Brand Name:Alpha & Omega Semiconductor Inc.

Model Number:AO6401A

Place of Origin:Multi-origin

... • RoHS Compliant Product Specifications: • Drain-Source Voltage (VDS): 20V • Drain-Source On-Resistance (RDS(ON)): 0.8 Ohm • Gate-Source Voltage (VGS): -4.5V to -5.5V • Continuous Drain Current (ID): 5.2A • Maximum Power Dissipation (PD):

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

...low voltage MOSFET is a semiconductor device that has become an indispensable component in modern electronic circuits. It is designed to operate at low power levels while maintaining high efficiency and performance. The low voltage power MOSFET is specifically created to address the needs of applications where low power consumption is critical. With its low power loss feature, this MOSFET...

Brand Name:Infineon

Model Number:IRFI4019HG-117P

Place of Origin:China

...Power MOSFET 100V Ultra-Low Rds(on) 1.9mΩ TO-264 High Efficiency Robust Performance Superior Thermal Management and High Power Density for Demanding Applications Features Integrated Half-Bridge Package Reduces the Part Count by Half Facilitates Better PCB Layout Key Parameters Optimized for Class-D Audio Amplifier Applications Low RDS(ON) for Improved Efficiency Low Qg and Qsw for Better THD and Improved Efficiency Low...

Brand Name:Hua Xuan Yang

Model Number:AP15N10D

Place of Origin:ShenZhen China

...Mosfet Power Transistor Low ON Resistance AP15N10D Mosfet Power Transistor Applications Power MOSEFET technology is applicable to many types of circuit. Applications include: Linear power supplies Switching power supplies DC-DC converters Low voltage motor control Mosfet Power Transistor Description: The AP15N10D uses advanced trench technology and design to provide excellent RDS(ON) with low...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:8205A

...MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount Package APPLICATION z Battery Protection z Load Switch z Power...

Brand Name:Original brand

Model Number:NTMFS5H419NLT1G

Place of Origin:Original

Mosfet Power Transistor NTMFS5H419NLT1G MOSFET T8 40V Low Coss SMD/SMT Feature • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant Categories MOSFET T8 40V LOW...

Brand Name:Infineon Technologies

Model Number:BSC109N10NS3G

Place of Origin:Original

... level ·Excellent gate charge x RDs(on)product (FOM) · Very low on-resistance RDs(on) ·150 C operating temperature · Pb-free lead plating; RoHS compliant ·Qualified according to JEDEC1) for target application · Halogen-...

Brand Name:YUYANG

Model Number:YYZJ03

Place of Origin:China

...Low Power Consumption Safety And Efficiency Heating Equipment Introduction: 1. Adopting European MOSFET, IGBT solid-state power module and advanced resonant inverter technology, with high efficiency and high output power, saving energy; 2. High frequency, heated quickly, its power consumption...

Brand Name:FAIRCHILD

Model Number:FDN304PZ

Place of Origin:Original

...MOSFET switching power mosfet Features · ► –2.4 A, –20 V. RDS(ON) = 52 mW @ VGS = –4.5 V RDS(ON) = 70 mW @ VGS = –2.5 V RDS(ON) = 100 mW @ VGS = –1.8 V ► Fast switching speed ► ESD protection diode ► High performance trench technology for extremely low RDS(ON) ► SuperSOTTM -3 provides low RDS(ON) and 30% higher power...

Brand Name:FAIRCHILD

Model Number:FDN304PZ

Place of Origin:Original

...MOSFET switching power mosfet Features · ► –2.4 A, –20 V. RDS(ON) = 52 mW @ VGS = –4.5 V RDS(ON) = 70 mW @ VGS = –2.5 V RDS(ON) = 100 mW @ VGS = –1.8 V ► Fast switching speed ► ESD protection diode ► High performance trench technology for extremely low RDS(ON) ► SuperSOTTM -3 provides low RDS(ON) and 30% higher power...

Brand Name:Original Factory

Model Number:BSC004NE2LS5ATMA1

Place of Origin:China

... Circuits Chip N Channel Power MOSFET Product Description Benchmark switching performance (minimum quality factor RDS(on) x Qg and RDS(on) x Qgd) Specific components optimized for toroidal circuits to provide low RDS(on) Parts with integrated Schottky...

Brand Name:IOR

Model Number:IRFR024NTRPBF

Place of Origin:CHINA

IRFR024NTRPBF D-PAK N-Channel 55V 17A 45W Surface Mount RoHS Compliant Feature l Ultra Low On-Resistance l Surface Mount (IRFR024N) l Straight Lead (IRFU024N) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated FET Type N-Channel ...

Brand Name:IXYS

Model Number:IXFK140N30P

Place of Origin:Germany

...Power Mosfet Hiperfet TO-264 300V 140A Space Savings N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode VDSS = 300V I D25= 140A RDS(on)≤24mΩ DS99557F(5/08)trr≤200ns Features • Fast intrinsic diode • Avalanche Rated • Low RDS(ON) and QG • Low package inductance Advantages z Easy to mount z Space savings z High power density Applications • DC-DC coverters • Battery chargers • Switched-mode and resonant-mode power

Brand Name:HT

Model Number:D7N65 TO-252W

Place of Origin:China

...POWER MOSFET DESCRIPTION The D7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. Features • RDS...

Brand Name:JUYI

Model Number:JY13M

Place of Origin:China

... in H-bridge, Inverters and other applications. FEATURES Device VBR(DSS) RDS(ON) MAX TJ=25ºC Package N-Channel 40V <30mΩ@VGS=10V,ID=12A TO252-4L <40mΩ@VGS=4....

Brand Name:Original Factory

Model Number:MSC750SMA170B

Place of Origin:CN

...Power MOSFET Transistors TO-247-3​ Product Description Of MSC750SMA170B MSC750SMA170B is Silicon Carbide N-Channel Power MOSFET, Low capacitances and low gate charge, package is TO-247-3. Specification Of MSC750SMA170B Part Number: MSC750SMA170B Technology: SiCFET (Silicon Carbide) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +23V, -10V Power...

Place of Origin:PHILIPPINE

Brand Name:IXYS Corporation

Model Number:IXFK48N50

...Power MOSFETs Description: N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Applications: International standard packages Molding epoxies meet UL94V-0 flammability classification SOT-227B miniBLOC with aluminium nitride isolation Low RDS (on...

Brand Name:UCHI

Model Number:HT7550 7530

Place of Origin:Dongguan China

SOT89-3 HT7550-1 100mA Low Power LDO​ Features ● Low power consumption ● Low voltage drop ● Low temperature coefficient ● High input voltage (up to 24V) ● Related product model: HT7536-1,HT7550-1,HT7536-1,HT7533-1,HT7530-1... ● High output current : 100mA...