power discrete devices silicon carbide sbd

Brand Name:Lingxun

Place of Origin:China

Power Discrete Devices Silicon Carbide Schottky Barrier Diode For LED Lighting *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;}img, picture, video, canvas, ...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Silicon Carbide SBD Power Discrete Devices for Sale *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-...

Brand Name:ZMSH

Place of Origin:China

...superior thermal conductivity, wide bandgap, and chemical stability, SiC wafers enable the fabrication of advanced power devices that deliver higher efficiency, greater reliability, and smaller footprints compared to traditional silicon-based technologies.

Brand Name:TANKBLUE

Model Number:4h-n

Place of Origin:CHINA

...SBD MOS Device,4H-N 4inch 6inch Sic Wafers Semiconductor High Crystal Quality For Demanding Power Electronics, 4H-N 8inch TANKBLUE Brand Semiconductor Substrate SIC Silicon Carbide Wafer For Solar Photovoltaic Advantages of Silicon Carbide Hardness There are numerous advantages to using silicon carbide over more traditional silicon...

Brand Name:Original Factory

Model Number:MSC2X31SDA170J

Place of Origin:CN

... package is SOT-227-4, miniBLOC(Chassis Mount). Specification Of MSC2X31SDA170J Part Number MSC2X31SDA170J Product Type SiC Discrete Diode Drain Source Voltage (V) [max] 0 Reverse Voltage (V) [max] 1700 Forward Voltage (V) [typ] 1.5 Forward Current (A)

Brand Name:ZHENAN

Model Number:Silicon Carbide

Place of Origin:China

... and thermistors. SiC has flourished in the research of power electronic devices due to its excellent performance and excellent properties of silicon carbide devices. Silicon carbide can not only improve the voltage resistance of the device, but more

Brand Name:KAMTAI

Model Number:KTSK15

Place of Origin:CHINA

... of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). In particular, the much higher breakdown field strength and thermal conductivity of SiC allow creating devices which outperform by far the

Place of Origin:China

...Silicon Carbide Rod Description MAX TEMPERATURE:: Up To 1600℃ APPLICATION:: Electric Furnaces And Electric Heating Devices PRODUCTS:: SiC Heating Elements SHAPE:: ED/U/W/SC/SCR/DB/G/H/DM POWER SOURCE:: Electric PURITY:: 99.9% High Purity High Light: High Temperature SiC Heating Elements , 1400C SiC Heating Elements , 1600C Silicon Carbide Rod High Temperature SiC Heating Elements, 1600°C Silicon

Brand Name:PAM-XIAMEN

Place of Origin:China

...Silicon Carbide) Wafer, Production Grade,Epi Ready,2”Size PAM-XIAMEN provides high quality single crystal SiC (Silicon Carbide)waferfor electronic and optoelectronic industry. SiC wafer is a next generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device...

Brand Name:Keysight/Agilent

Model Number:B1505A

Place of Origin:Malaysia

...Power Device Analyzer / Curve Tracer Description of Keysight (Agilent) B1505A The Agilent B1505A Power Device Analyzer / Curve Tracer is the only single box solution available today with the capability to characterize high power devices from the sub-picoamp level up to 3000 volts and 40 amps. These capability covers evaluation for new power device using wide band gap materials such as silicon carbide...

Brand Name:Analog Devices Inc.

Model Number:HMC788ALP2ETR

Place of Origin:Multi-origin

... over the 0.5 to 2.7GHz frequency range with a maximum output power of 50W. The device offers an extremely wide instantaneous bandwidth, high efficiency, and excellent linearity performance. Features: • Power Gain of 27dB • Maximum Output Power of

Brand Name:Rohm Semiconductor

Model Number:SCS212AJTLL

Place of Origin:Japan

SCS212AJTLL Diode 650 V 12A Surface Mount TO-263AB​ Datasheet:SCS212AJTLL Category Single Diodes Mfr Rohm Semiconductor Product Status Active Technology SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max) 650 V Current - Average Rectified (Io) ...

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:IRLR3915TRPBF

Product Description Infineon HEXFET Power MOSFET N Channel 55V 30A DPAK IRLR3915TRPBF IRLR3915TRPBF Infineon Technologies/International Rectifier IOR HEXFET MOSFET N-Channel 55V 30A DPAK Discrete Semiconductor Products N-Channel 55 V 30A (Tc) 120W (Tc) ...

Brand Name:Shaanxi Chengda

Model Number:Negotiate based on equipment processing capacity

Place of Origin:China

...the electrodes. The stability and output power control capability of the power system are crucial for the heating effect and melting speed. Electrode system: Electrodes are generally made of silicon carbide or graphite, which have good conductivity and

Brand Name:HMT

Place of Origin:CHINA

...silicon carbide wafers,4H-SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy device,power devices,high-temperature device...

Brand Name:JX

Model Number:Good Quality Copper Molybdenum Heat Sinks

Place of Origin:China

..., and frames for high-powered electronic devices. With the thermal advantages of copper with the very low expansion characteristics of molybdenum, molybdenum copper has properties similar to those of silicone carbide, aluminum oxide, and beryllium oxide

Place of Origin:China

Brand Name:Feihong

Model Number:DL-201

...-resistant stainless steel, 300mm or 400mm wide and electronic speed-controlled. The machine is thyristor triggering temperature controlled, with a heating power of

Brand Name:Everlight Original

Model Number:EL3063

Place of Origin:Original & New

...series of devices each consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon zero voltage crossing photo triac. They are designed for use with a discrete power triac in the interface of logic systems to equipment powered from ...