power ldmos transistor sot 539a

Place of Origin:/

Brand Name:NXP

Model Number:BLF188XR

Power LDMOS transistor BLF188XR NXP SOT-539A New and Original in stock ​ Transistor Type LDMOS (Dual) Frequency 10MHz ~ 600MHz Gain 24.4dB Voltage - Test 50V Current Rating - Noise Figure - Current - Test 40mA Power - Output 1400W Voltage - Rated 50V Package / Case SOT539A Features and benefits Easy power...

Brand Name:Anterwell

Model Number:BC817-25

Place of Origin:original factory

SOT-23 BIPOLAR TRANSISTORS TRANSISTOR (NPN) FEATURES For general AF applications High collector current High current gain Low collector-emitter saturation voltage MECHANICAL DATA Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E ...

Brand Name:Texas Instruments

Model Number:TPS62141RGTR

Place of Origin:N/S

NPN PNP Transistor Texas Instruments/TI TPS62141RGTR Vin (Min) (V) 3 Vin (Max) (V) 17 Vout (Min) (V) 1.8 Vout (Max) (V) 1.8 Iout (Max) (A) 2 Iq (Typ) (uA) 17 Switching frequency (Min) (kHz) 1250 Switching frequency (Max) (kHz) 2500 Features Enable, Light ...

Model Number:BC817-25

Place of Origin:original factory

SOT-23 BIPOLAR TRANSISTORS TRANSISTOR (NPN) FEATURES For general AF applications High collector current High current gain Low collector-emitter saturation voltage MECHANICAL DATA Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E ...

Place of Origin:Guangdong, China

Brand Name:Cicotex

Model Number:BLF188XR

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Brand Name:VBE

Model Number:VBE10R5

Place of Origin:CHINA

Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz

Brand Name:Freescale

Model Number:MRFE6VP6300HR5

Place of Origin:USA

MRFE6VP6300HR5 RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 26.5dB 300W NI-780-4 These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile ...

Brand Name:Huixin

Model Number:MMDT3946DW SOT-363

Place of Origin:China

... Planar Die Construction Ideal for Low Power Amplification and Switching MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage ...

Brand Name:onsemi

Model Number:NTK3134NT1G

Place of Origin:original

NTK3134NT1G Power MOSFET Transistor High Speed Switching Low On Resistance SOT-723 Package Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:MMBTA55

SOT-23 Plastic-Encapsulate Transistors MMBTA55 TRANSISTOR (NPN) FEATURE l Driver Transistors Marking :2H MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -4 V IC Collector Current -500 mA PC Collector Power...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:8205A

8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Excellent RDS...

Brand Name:NXP Semiconductors

Model Number:BCX5416TA

Place of Origin:China

BCX5416TA 60V 1A NPN Transistor with High hFE 100-250 625mW Power Low Noise SOT-89-3 Package Halogen-Free AEC-Q101 Qualified Tape andamp; Reel Packaging andnbsp; Features andbull; BVCEO andgt; 45V, 60V andamp; 80V andbull; IC = 1A Continuous Collector ...

Brand Name:original

Model Number:L2N7002LT1G

New and Original SMD MOSFET Field Effect Transistor SOT-23 L2N7002LT1G Products Description: 1. PD Power Dissipation| 300mW/0.3W Description & Applications| SEMICONDUCTOR TECHNICAL DATA ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH ...

Model Number:NP110N055PUG

Place of Origin:US

Brand Name:Original

MOSFET N-CH 55V 110A TO-263 NP110N055PUG Product Description Packaging Tape & Reel (TR) Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 110A (Tc) Drive ...

Place of Origin:Original

...Buy Transistor Type LDMOS (Dual), Common Source Frequency 2.5GHz ~ 2.69GHz Gain 14.5dB Voltage - Test 28V Current Rating - Noise Figure - Current - Test 500mA Power - Output 56W Voltage - Rated 65V Package / Case SOT-1251-2 Supplier Device Package SOT-1251...

Brand Name:ON

Model Number:MMBT5551LT1G

Place of Origin:ON

...IGBT Power Module 600mA 160V BJT Bipolar Transistors MMBT5551LT1G SOT-23-3 Bipolar Transistors - BJT 600mA 160V NPN Manufacturer: onsemi Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor ...

Brand Name:Original

Model Number:PXT8050

Place of Origin:Original of place

Mosfet power transistor PXT8050 transistor (NPN) SOT-89-3L SMD Model number PXT8050 D/ C Newest Brand Original Package type Surface Mount Service 24h ...

Brand Name:UCHI

Model Number:3904W /3906W

Place of Origin:Dongguan China

SOT-323 3904W /3906W NPN and PNP Silicon FEATURES -These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications. - Pb-Free Package is available. GENERAL PURPOSE AMPLIFIER TRANSISTORS...

Brand Name:Texas Instruments

Model Number:PD85035S-E

Place of Origin:Malaysia

...power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035-E boasts the excellent gain, linearity and reliability of ST's latest LDMOS...