power mosfet for switching

Brand Name:Lingxun

Model Number:LC65R380D

Place of Origin:China

...Power MOSFET For Switching Charger N-channel Super Junction MOSFET Part No.:LC65R380D Package:TO-252 MAIN CHARACTERISTICS ID:11A VDSS:650V RDSON-typ VGS=10V:340mΩ FEATURES • Adopt advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching...

Brand Name:Anterwell

Model Number:IRFP4229PBF

Place of Origin:original factory

...SWITCH Features • Advanced Process Technology • Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications • Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications • Low QG for Fast Response • High Repetitive Peak Current Capability for Reliable Operation • Short Fall & Rise Times for Fast Switching...

Model Number:IRLL024NTRPBF

Place of Origin:original factory

... from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well

Brand Name:JUYI

Model Number:JY8N5M

Place of Origin:China

... and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Get more details

Brand Name:HT

Model Number:F4N65L TO-220F-3L

Place of Origin:China

...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power

Brand Name:Toshiba

Model Number:2SC5589

Place of Origin:Original Factory

...Mosfet Power Transistor for high speed switching application Description The 2SC5589 is a high voltage, high efficiency, simple to use, 4A buck regulator optimized for a variety of applications. The 2SC5589 works from a 3.0V to 36V input voltage range, and provides up to 4A of continuous output current. The output voltage is adjustable from 30V down to 0.8V. The AOZ1284 integrates an N-channel high-side power MOSFET. The switching

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

...Power MOSFET is a type of field-effect transistor designed for use in high voltage, high power applications such as Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power Supply, Charging Pile, etc. It features high frequency operation, low on-resistance and excellent power switching performance. It is suitable for high voltage and high power switching...

Brand Name:Infineon Technologies

Model Number:IPD60R2K1CEAUMA1

Place of Origin:Multi-origin

... Trench MOSFET technology for excellent RDS(ON) and low gate charge. It provides superior switching performance with fast switching times and low-level gate charge. With a wide range of VDSS, this device is suitable for a variety of power applications.

Brand Name:IOR

Model Number:IRF540NS

Place of Origin:CHINA

... Avalanche Rated Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and

Brand Name:IXYS

Model Number:IXFK27N80Q

Place of Origin:Original Factory

...Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages z Low RDS (on) z Rated for unclamped Inductive load switching...

Place of Origin:China

Brand Name:ONSEMI

Model Number:NUS5530MN

High Power MOSFET NUS5530MN Integrated with PNP Low VCE(sat) Switching Transistor [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize...

Brand Name:Hua Xuan Yang

Model Number:2N60

Place of Origin:ShenZhen China

...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

Brand Name:STMicroelectronics

Model Number:STP15810

Place of Origin:Shenzhen, China

... also reducing internal capacitance and gate charge for faster and more efficient switching. Features : 100% avalanche tested Ultra low on-resistance Distinctive Characteristics : Part No: STP15810 Description: N Channel Power MOSFET Rad Hardened: No

Place of Origin:PHILIPPINE

Brand Name:Fuji Electric

Model Number:FMH23N50E

...power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Specifications: part no

Brand Name:JUYI

Model Number:JY8N5M

Place of Origin:China

... and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.

Brand Name:STMicroelectronics

Model Number:STF28NM50N

Place of Origin:China

...Power MOSFET 500V/28A Rating Low 0.135andOmega; Rds(on) Fast Switching Avalanche Rugged Eco-Mode Low Gate Charge TO-220FP Package RoHS Certified for SMPS andamp; Motor Drives andnbsp; Features andbull; 100% avalanche tested andbull; Low input capacitance and gate charge andbull; Low gate input resistance andnbsp; Applications andbull; Switching applications andnbsp; Description These devices are N-channel Power MOSFETs...

Brand Name:Original Factory

Model Number:IPT020N10N5ATMA1

Place of Origin:China

Power MOSFET Original Integrated Circuit IPT020N10N5ATMA1 Product Description Less paralleling required Increased power density Reduced switching and conduction losses Product Specifications Part Number: IPT020N10N5ATMA1 FET Type: N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 273W (Tc) Series: OptiMOS™5 Technology: MOSFET...

Brand Name:VISHAY

Model Number:IRFP9240PBF

Place of Origin:USA

...Power Mosfet 12A / 200V P-Channel Original FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • P-Channel • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching...

Brand Name:Original Factory

Model Number:A2F12M12W2-F1

Place of Origin:CN

Power Module Fourpack Topology A2F12M12W2-F1 SiC Power MOSFET IGBT Module Full Bridge Description Of A2F12M12W2-F1 This A2F12M12W2-F1 is ACEPACK 2 power module in fourpack topology integrates advanced silicon carbide Power MOSFET technology. The module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate. The result is exceptionally low on-resistance per unit area and excellent switching

Brand Name:ON Semiconductor

Model Number:NCS20074DTBR2G

... two N-channel MOSFETs or IGBTs in a half-bridge configuration. Its fast rise and fall time (15ns typical) and wide input voltage range (4.5V to 18V) make it ideal for high-frequency switching applications. Applications: DC-DC Converters, Motor Drives,