power switching igbt power transistor

Brand Name:onsemi

Model Number:FGA25N120ANDTU

Place of Origin:Original Factory

...Power Switching IGBT 1200V 40A 310W TO3P High Speed Switching Description Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and switching losses. The AND series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). Features • High speed switching...

Place of Origin:CN

Brand Name:Original Factory

Model Number:FP35R12W2T7B11

Automotive IGBT Modules FP35R12W2T7B11 1200V 35A 20mW Medium Power Single IGBT Transistors Module [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed...

Brand Name:FUJI

Model Number:2MBI100N-060

Place of Origin:JAPAN

...IGBT Power Module 2-PACK IGBT 600V 100A IGBT MODULE ( N series ) n n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function ( ~3 Times Rated Current) n n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply Description 1. IGBT...

Brand Name:ON/Fairchild

Model Number:G40N60UFD

Place of Origin:Original Factory

...IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features : • High speed switching...

Brand Name:IXYS

Model Number:IXYH30N450HV

...-emitter voltage and a 3.9V maximum collector-emitter saturation voltage. IXYS IXYT30N450HV and IXYH30N450HV IGBTs offer a low gate drive requirement and 430W power density. The series is ideal for use in switch-mode and resonant-mode power supplies as

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:IHW30N160R2FKSA1

Place of Origin:CHINA

...: TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1600 V ...

Brand Name:SIEMENS

Model Number:6SY7000-0AC37

Siemens 6SY7000-0AE73 S SIMOVERT MASTER DRIVES IGBT TRANSISTOR MODULE 300A 1200V Descripition Part Number 6SY7000-0AE73 Manufacturer / Brand SIEMENS Category Discrete Semiconductor Products > Transistors - IGBTs - Modules Description IGBT Modules ...

Brand Name:Eupec

Model Number:FS150R12KE3

Place of Origin:Germany

...IGBT Transistors Module FS150R12KE3 or FS15OR12KE3 FS150R12KE3 Product Description Brand: Eupec Model: FS150R12KE3 Alternate Model: FS15OR12KE3 Control way: unidirectional Pole number: two pole Package Material :Metal Package Package Outline: Flat Shape Shutdown speed: ordinary Cooling function: heat sink Description: EconoPACK ™ 3 1200V sixpack IGBT module with IGBT3 and NTC Features Description: High power...

Place of Origin:Original

Brand Name:Infineon Technologies

Model Number:IHW40N60RF

...IGBT Power Module Transistors IGBTs Single IHW40N60RF Specifications Part Status Active IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 80A Current - Collector Pulsed (Icm) 120A Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 40A Power - Max 305W Switching...

Brand Name:ESTEL

Model Number:ET48300-005

Place of Origin:Shenzhen, China (Mainland)

Introduction ET48300-005 sub-rack power supply 5U height compact design to meet critic alapplication needs of fiber and microwave transmission, access device, switch. The system maximum power is 300A, with AC/battery/load MCBs. The cables are front ...

Brand Name:Hua Xuan Yang

Model Number:G170C03LR1S

Place of Origin:ShenZhen China

..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ

Brand Name:Hua Xuan Yang

Model Number:G170C03LR1S

Place of Origin:ShenZhen China

..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ

Place of Origin:PHILIPPINE

Brand Name:Toshiba Semiconductor

Model Number:MP6501A

... BUILT INTO IN 1 PACKAGE HIGH INPUT IMPENDANCE Applications: The Electrodes are is Isolated from Case 6 Darlington Transistor Built Into in 1 Package High Input Impendance High DCCurrent Gain: hFE = 100(Min.)(IC=15A) Low Saturation ...

Brand Name:Infineon Technologies

Model Number:FF600R12IE4

Place of Origin:Hungary

PrimePACK™ 2 1200 V, 600 A half-bridge dual IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled 4 diode,FF600R12IE4 You have been redirected from search results. Not what you are looking for? See results for‘FF600R12IE4’. Overview Buy online FF600R12IE4...

Brand Name:Infineon / IR

Model Number:IKW30N60H3

Place of Origin:Germany

... K30H603 IGBT Transistors IKW30N60H3 K30H603 silk screen new imported triode IGBT high power welding tube IGBT Transistors 600V 30A 187W Product Attribute Attribute Value Search Similar Manufacturer: Infineon Product Category: IGBT Transistors RoHS...

Brand Name:ONSEMI

Model Number:BD681

Place of Origin:Malaysia

...Power Transistors Medium Power Switching ■ SGS-THOMSON PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES ■ MONOLITHIC DARLINGTON CONFIGURATION ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN power transistors...

Place of Origin:US

Brand Name:Original

Model Number:FGH60N60SFD

...Tube Part Status Active IGBT Type Field Stop Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 120A Current - Collector Pulsed (Icm) 180A Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 60A Power - Max 378W Switching Energy 1.79mJ (on), ...

Brand Name:Infineon Technologies

Model Number:IRFB4019PBF

Place of Origin:Multi-origin

...Power Electronics Product Description: The IRFB4019PBF is a high-performance, silicon-based MOSFET power electronics device from International Rectifier. It is a voltage-controlled insulated-gate bipolar transistor (IGBT) that is designed to provide superior performance in power supply and other power...

Brand Name:poney

Model Number:MIG 160SNY

Place of Origin:CHINA

...power input 220V 50/60HZ Input capacity 5.5kva no load voltage 56V welding current 20-160A electrode rod 1.6-4.0MM wire diameter 0.8/1.0MM duty cycle 60% weight 13.0KG Features 1. single phase 220v 2. powerful IGBT transistor 3. effortless one touch setup, easy adjustment and ...

Model Number:FSDM0465R

Place of Origin:original factory

Green Mode Fairchild Power Switch Field Effect Transistor , FSDM0465R Features „ Internal Avalanche Rugged SenseFET „ Low Start-up Current (max. 40µA) „ Low Power Consumption; under 1W at 240VAC and 0.4W Load „ Precise Fixed Operating Frequency (66kHz...