power transistor and igbt 1200v

Brand Name:Infineon

Model Number:IKW25N120T2

Place of Origin:Original Factory

... discrete with anti-parallel diode in TO-247 package Infineon 1200V Gen8 IGBTs feature trench gate field stop technology delivered in industry standard TO-247 packages to provide best-in-class performance for ...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

... is designed to support applications with high frequency up to 60KHz, and offers a current density of 400A/c㎡. High Power IGBT is an ideal choice for use in a wide range of applications requiring high speed switching and high power. Technical Parameters:

Place of Origin:Japan

Brand Name:FUJITSU

Model Number:7MBR15SA120B

...IGBT(1200V/15A/PIM) . Part NO: 7MBR15SA120B Brand: FUJITSU Date Code: 05+ Quality Warranty: 3 Months Mounting Type: Screws Overview We specialize in high power and power conversion modules of famous brands Categories include: Darlington Schottky, rectifier intelligent, IGBT, IPM, GTR, DC-DC, AC-DC rectifier and power supply and other modules. Applications: power...

Brand Name:SIEMENS

Model Number:6SY7000-0AC37

...-0AE73 S SIMOVERT MASTER DRIVES IGBT TRANSISTOR MODULE 300A 1200V Descripition Part Number 6SY7000-0AE73 Manufacturer / Brand SIEMENS Category Discrete Semiconductor Products > Transistors - IGBTs - Modules Description IGBT Modules Description IC FLASH ...

Brand Name:IXYS

Model Number:IXYK110N120A4

... thin-wafer technology and a state-of-the-art 4th generation (GenX4™) trench IGBT process. These insulated-gate bipolar transistors feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. The

Place of Origin:Original

Brand Name:Infineon Technologies

Model Number:IRG7PH42UDPBF

...IGBT Power Module Transistors IGBTs Single IRG7PH42UDPBF Specifications Part Status Active IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 85A Current - Collector Pulsed (Icm) 90A Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A Power...

Place of Origin:CN

Brand Name:Original Factory

Model Number:FF50R12RT4

Automotive IGBT Modules FF50R12RT4 IGBT 1200V 50A Transistors Modules Chassis Mount [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery ...

Brand Name:Anterwell

Model Number:FGA25N120ANTD

Place of Origin:original factory

FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT Features • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C • Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = ...

Brand Name:Infineon

Model Number:FF450R12ME4

Place of Origin:TW

... Saturation Voltage: 1.75 V Continuous Collector Current at 25 C: 675 A Gate-Emitter Leakage Current: 400 nA Pd - Power Dissipation: 2.25 kW Minimum Operating Temperature: - 40 C Maximum Operating Temperature: + 150 C

Model Number:FGA25N120ANTD

Place of Origin:original factory

FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT Features • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C • Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = ...

Brand Name:INFINEON

Model Number:FF300R12KT4

Place of Origin:N/A

FF300R12KT4 IGBT Modules IGBT 1200V 300A List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND PART NUMBER MFG/BRAND 88E3019-A0-NAJ2C000 MARVELL CX28380-16 MNDSPEED SAF7741HV/125 NXP CS9211-VNG NSC NJM2368E JRC C10P20FR NIEC RDC19222-203 DDC ...

Brand Name:FUJI

Model Number:6DI30A-120

Place of Origin:JAPAN

...Transistors 30A, 1200V, 6 CHANNEL, NPN, Si, POWER TRANSISTOR Electrical Characteristics Collector Current-Max (IC) 30A Collector-emitter Voltage-Max 1200V Configuration COMPLEX DC Current Gain-Min (hFE) 70A Fall Time-Max (tf) 3000 JESD-30 Code R-PUFM-X17 Number of Elements 6 Number of Terminals 17 Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR Package Style FLANGE MOUNT Polarity/Channel Type NPN Power...

Brand Name:Infineon

Model Number:FF50R12RT4

Place of Origin:China

...1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled Typical Applications • High Power Converters • Motor Drives • UPS Systems Electrical Features • Extended Operation Temperature Tvj op • Low Switching Losses • Low VCEsat • Tvj op = 150°C • VCEsat with positive Temperature Coefficient Mechanical Features • Isolated Base Plate • Standard Housing IGBT...

Brand Name:Infineon Technologies

Model Number:FF300R12KT4

Place of Origin:HUNGARY

FF300R12KT4 1200V 300A 62mm C-series module with fast trench fieldstop IGBT4 and optimized Emitter Controlled Diode 62mm C-series 1200 V, 300 A dual IGBT module with fast TRENCHSTOP™ IGBT4 and optimized Emitter Controlled diode. Also available with Thermal...

Brand Name:KRUNTER

Model Number:KWG600H12N4B

Place of Origin:CHINA

... exceptional performance in various industrial settings requiring efficient power management. This specific product falls under the category of IGBT Module and is known as the KWP75H12E4-7M IGBT Module Half-Bridge Circuit. It is engineered to cater to the

Brand Name:Infineon

Model Number:FF300R12KT4

Product Attribute Attribute Value Select Attribute Manufacturer: Infineon Product Category: IGBT Modules RoHS: Details Product: IGBT Silicon Modules Configuration: Dual Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 1.75...

Place of Origin:US

Brand Name:Original

Model Number:FGH40N60SMD

Product Detail Packaging Tube Part Status Active IGBT Type Field Stop Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 80A Current - Collector Pulsed (Icm) 120A Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 40A Power - Max 349W ...

Brand Name:MISNCO

Model Number:LGK-60IGBT

Place of Origin:Beijing, China

... gate high power transistor IGBT and pulse width modulation (PWM) soft switching technology are used to design and manufacture. The cutting machine can cut all metal materials, ...

Brand Name:Toshiba

Model Number:MG200Q1US51

Place of Origin:Japan

...IGBT Power Module MG200Q1US51 Transistor Module MG200Q1US51 Product Description Manufactured by: Toshiba America, Inc. Part number: MG200Q1US51 Part Category: Transistors Description: 300A, 1200V, N-CHANNEL IGBT Collector-Emitter Voltage: 1200V Gate-Emitter Voltage: 20V Collector Current (DC): 300A Forward Current: (DC): 200A Collector Power...