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All ptfa081501e v1 switching transistor wholesalers & ptfa081501e v1 switching transistor manufacturers come from members. We doesn't provide ptfa081501e v1 switching transistor products or service, please contact them directly and verify their companies info carefully.
| Total 217 products from ptfa081501e v1 switching transistor Manufactures & Suppliers |
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Categories:FETs MOSFETs Country/Region:china RF Mosfet 28 V 950 mA 900MHz 18dB 150W H-30248-2 |
Shenzhen Wonder-Chip Electronics Company Limited
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Brand Name:Hua Xuan Yang Model Number:G170C03LR1S Place of Origin:ShenZhen China ..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ |
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong |
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Brand Name:Hua Xuan Yang Model Number:G170C03LR1S Place of Origin:ShenZhen China ..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ |
Beijing Silk Road Enterprise Management Services Co.,LTD
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Brand Name:Anterwell Model Number:2N2222A Place of Origin:original factory NPN switching transistors 2N2222; 2N2222A FEATURES • High current (max. 800 mA) • Low voltage (max. 40 V). APPLICATIONS • Linear amplification and switching. DESCRIPTION NPN switching transistor in a TO-18 metal package. PNP complement: 2N2907A. ... |
Anterwell Technology Ltd.
Guangdong |
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Categories:RF FETs, MOSFETs Country/Region:china RF Mosfet 28 V 950 mA 900MHz 18dB 150W H-30248-2 |
Beijing Silk Road Enterprise Management Services Co.,LTD
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Categories:RF FETs, MOSFETs Country/Region:china RF Mosfet 28 V 950 mA 900MHz 18dB 150W H-30248-2 |
Beijing Silk Road Enterprise Management Services Co.,LTD
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Brand Name:Infineon Model Number:IRF9540NPBF Place of Origin:Original Factory ...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in |
Shenzhen ATFU Electronics Technology ltd
Guangdong |
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Model Number:2N2222A Place of Origin:original factory NPN switching transistors 2N2222; 2N2222A FEATURES • High current (max. 800 mA) • Low voltage (max. 40 V). APPLICATIONS • Linear amplification and switching. DESCRIPTION NPN switching transistor in a TO-18 metal package. PNP complement: 2N2907A. ... |
ChongMing Group (HK) Int'l Co., Ltd
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Place of Origin:USA Brand Name:NXP Semiconductors Model Number:PMST3904 ...NXP Semiconductors - NPN switching transistor. Detailed Description of PMST3904: EIS Part Number: EIS-PMST3904 Manufacturer Part Number: PMST3904 Manufacturer / Brand: NXP Semiconductors Brief Description: NPN switching transistor Quantity Available: 9599 ... |
Excellent Integrated System LIMITED (EIS LIMITED)
HongKong |
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Place of Origin:USA Brand Name:NXP Semiconductors Model Number:PMST3904 ...NXP Semiconductors - NPN switching transistor. Detailed Description of PMST3904: EIS Part Number: EIS-PMST3904 Manufacturer Part Number: PMST3904 Manufacturer / Brand: NXP Semiconductors Brief Description: NPN switching transistor Quantity Available: 9599 ... |
Excellent Integrated System LIMITED (EIS LIMITED)
HongKong |
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Brand Name:Original Model Number:MTB15P04J3 Place of Origin:Original ...Switching/Transistor IC Chips Small MOQ , Wholesale price , Fast delivery . Product details Type IGBT transistor Conditional New and original MOQ 10pieces SPQ 50 pieces PAYMENT T/T , PAYPAL ,WESTERN UNION,ALIPAY Shipment DHL . FEDEX , UPS , EMS , POST Product Keywords MTB15P04J3 all kinds of IGBT transistor... |
Shenzhen Weitaixu Capacitor Co.,Ltd
Guangdong |
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Place of Origin:China Brand Name:ONSEMI Model Number:NUS5530MN ... in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor,IGBT,PCBA, prototype,BOM Kitting. Sunbeam Electronics has |
Sunbeam Electronics (Hong Kong) Limited
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Brand Name:STMicroelectronics Model Number:STW25N80K5 Place of Origin:Original Factory N-channel 800 V, 0.19 Ω typ., 19.5 A MDmesh™ K5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 packages Applications • Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based... |
Shenzhen Retechip Electronics Co., Ltd
Guangdong |
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Brand Name:Infineon Technologies Model Number:BSZ0909NS Place of Origin:original BSZ0909NS MOSFET Power Electronics High Performance High-Efficiency Switching Transistors Features: - N-Channel MOSFET - Voltage: 100V - Drain Current: 6A - Rds(on): 0.36ohm - Package: TO-252 - Maximum Power Dissipation: 2.1W - Operating Temperature: -55... |
Shenzhen Sai Collie Technology Co., Ltd.
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Brand Name:FUJI Model Number:6DI30A-120 Place of Origin:JAPAN 6DI30A-120 NPN PNP Transistors 30A, 1200V, 6 CHANNEL, NPN, Si, POWER TRANSISTOR Electrical Characteristics Collector Current-Max (IC) 30A Collector-emitter Voltage-Max 1200V Configuration COMPLEX DC Current Gain-Min (hFE) 70A Fall Time-Max (tf) 3000 JESD-... |
DELI ELECTRONICS TECHNOLOGY CO.,LTD
Guangdong |
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Model Number:BT136-600D Place of Origin:United States Brand Name:Original #detail_decorate_root .magic-0{width:750px}#detail_decorate_root .magic-1{overflow:hidden;width:750px;height:405.95399188092017px;margin-top:0;margin-bottom:0;margin-left:0;margin-right:0}#detail_decorate_root .magic-2{margin-top:-3px;margin-left:0;width:... |
ShenZhen QingFengYuan Technology Co.,Ltd.
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Model Number:MMBT3906 Place of Origin:Guangdong, China Brand Name:KAIGENG MMBT3906 SOT-23 Electronic Components The transistor Engine Spot FET VN-Channel New Original MMBT3906 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;... |
Shenzhen Kaigeng Technology Co., Ltd.
Guangdong |
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Brand Name:REASUNOS Place of Origin:Guangdong, CN Low Power Loss Trench Process MOSFET with High EAS Capability and Smaller RSP *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, ... |
Reasunos Semiconductor Technology Co., Ltd.
Guangdong |
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Categories:Transistors - FETs, MOSFETs - RF Country/Region:china ..., please refer to the data sheet, such as PDF files Docx documents, etc. We have PTFA260451E V1 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our ... |
Rozee Electronics Co., Ltd
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Place of Origin:Original ...V1 Specifications Part Status Last Time Buy Transistor Type - Frequency - Gain - Voltage - Test - Current Rating - Noise Figure - Current - Test - Power - Output - Voltage - Rated - Package / Case - Supplier Device Package - Shipment UPS/EMS/DHL/FedEx Express. Condtion New original factory. PTRA093302DC V1... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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