rds on mosfet

Brand Name:IXYS

Model Number:IXFK27N80Q

Place of Origin:Original Factory

...Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages z Low RDS...

Brand Name:Lingxun

Place of Origin:China

... for different system designs. Its low Rds(ON) resistance ensures efficient power transfer, reducing power loss and heat dissipation. Our Low Voltage MOSFET is an ideal solution for applications requiring high efficiency and low power consumption.

Place of Origin:CN

Brand Name:Original Factory

Model Number:FTCO3V455A2

Automotive IGBT Modules FTCO3V455A2 40V 150A Low Rds Automotive MOSFET Module [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 ...

Brand Name:Infineon Technologies

Model Number:BSC054N04NSG

Place of Origin:original

...MOSFET Power Electronics High Performance and Reliable Solutions Product Name: BSC054N04NSG N-Channel MOSFET Function: This N-Channel MOSFET is a high density, low RDS(on) MOSFET ideal for switching applications. Package: SOT-23 Drain-Source Voltage (VDS): 40V Gate-Source Voltage (VGS): ±20V Continuous Drain Current (ID): -0.54A Drain-Source On-Resistance (RDS...

Brand Name:FAIRCHILD

Model Number:FDN304PZ

Place of Origin:Original

...MOSFET switching power mosfet Features · ► –2.4 A, –20 V. RDS(ON) = 52 mW @ VGS = –4.5 V RDS(ON) = 70 mW @ VGS = –2.5 V RDS(ON) = 100 mW @ VGS = –1.8 V ► Fast switching speed ► ESD protection diode ► High performance trench technology for extremely low RDS(ON) ► SuperSOTTM -3 provides low RDS...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:20G04S

...MOSFET Description The 20G04S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications General Features N-Channel VDS =40V,ID =20A RDS(ON) < 35mΩ @ VGS=10V RDS(ON) < 42mΩ @ VGS=4.5V P-Channel VDS =-40V,ID = -18A RDS(ON) <40mΩ @ VGS=-10V RDS...

Brand Name:VISHAY

Model Number:SIHB22N60E-E3

Place of Origin:CHINA

... Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 180 mOhm @ 11A, 10V Vgs(th)

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:8H02ETS

...MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4V RDS...

Model Number:NP110N055PUG

Place of Origin:US

Brand Name:Original

...) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.4 mOhm @ 55A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (...

Brand Name:JUYI

Model Number:JY13M

Place of Origin:China

... in H-bridge, Inverters and other applications. FEATURES Device VBR(DSS) RDS(ON) MAX TJ=25ºC Package N-Channel 40V <30mΩ@VGS=10V,ID=12A TO252-4L <40mΩ@VGS=4....

Brand Name:FAIRCHILD

Model Number:FDN304PZ

Place of Origin:Original

...MOSFET switching power mosfet Features · ► –2.4 A, –20 V. RDS(ON) = 52 mW @ VGS = –4.5 V RDS(ON) = 70 mW @ VGS = –2.5 V RDS(ON) = 100 mW @ VGS = –1.8 V ► Fast switching speed ► ESD protection diode ► High performance trench technology for extremely low RDS(ON) ► SuperSOTTM -3 provides low RDS...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

High EAS Capability Low Voltage MOSFET Trench/SGT Structure Process Low Rds(ON) *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: ...

Brand Name:Toshiba

Model Number:SSM3K361R,LF

Place of Origin:China

...MOSFET with Ultra-Low 40mandOmega; RDS(on) SOT-23 Package High Power Density Superior Efficiency Fast Switching and Logic Level Control for Compact Designs andnbsp; Featuresandnbsp; AEC-Q101 qualified (Please see the orderable part number list) 175℃ MOSFET 4.5 V drive Low drain-source on-resistance : RDS(ON) = 65 mΩ (typ.) (@VGS = 4.5 V) RDS...

Brand Name:Huixin

Model Number:BSS138

Place of Origin:China

SOT-23 Plastic-Encapsulate MOSFETS BSS138 N-Channel 50-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID 50 V 3.5Ω@10V 220mA 6Ω@4.5V BSS138 SOT-23 Datasheet.pdf FEATURES 1.High density cell design for extremely low RDS(on) 2.Rugged and Relaible APPLICATIONS 1.Direct ...

Brand Name:STMicroelectronics

Model Number:STW9N150

... MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1500 V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.5Ohm @ 4A, 10V Vgs(th) (Max) @ Id 5V @ 250µA

Brand Name:Toshiba Semiconductor

Model Number:SSM3K36MFV

Place of Origin:CHINA

... Tape & Reel (TR) Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 5V Rds On (Max)

Brand Name:Original

Model Number:IRLML2244TRPBF

Place of Origin:Original

MOSFET IRLML2244TRPBF Chips Diode Transistor Integrated Circuits PRODUCT DESCRIPTION MOSFET P-CH 20V 4.3A SOT23 PRODUCT PROPERTIES Mfr Infineon Technologies Series HEXFET Product Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) 4.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds...

Brand Name:onsemi

Model Number:FDC608PZ

Place of Origin:USA

...: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 5.8 A Rds On - Drain-Source Resistance: 30 mOhms Vgs - Gate-Source Voltage: - 12 V, + 12 V Vgs th - Gate-Source ...

Brand Name:Original Factory

Model Number:BSC004NE2LS5ATMA1

Place of Origin:China

...Circuits Chip N Channel Power MOSFET Product Description Benchmark switching performance (minimum quality factor RDS(on) x Qg and RDS(on) x Qgd) Specific components optimized for toroidal circuits to provide low RDS(on) Parts with integrated Schottky ...

Brand Name:Fairchild

Model Number:FDC86244

Place of Origin:Shenzhen, China

... Trench® process that has been optimized for rDS(on), switching performance and ruggedness. Features : „1) Max rDS(on) = 144 mΩ at VGS = 10 V, ID = 2.3 A 2) „Max rDS(on) = 188 mΩ at VGS = 6 V, ID = 1.9 A 3) „High performance trench technology for