sbd mos device sic substrate

Brand Name:tankblue

Model Number:4h-n

Place of Origin:CHINA

4inch 6inch 4H-N sic wafers dummy Prime Production grade for SBD MOS Device 1. Comparison of third-generation semiconductor materials SiC crystal is a third-generation semiconductor material, which has great advantages in low-power, miniaturization, high-...

Brand Name:ANG

Model Number:SIC-W05

Place of Origin:Guangdong, China

... and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it

Brand Name:ZMKJ

Model Number:6inch 4h-n sic wafers

Place of Origin:CHINA

4h-n 4inch 6inch dia100mm sic seed wafer 1mm thickness for ingot growth Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafersS/ Customzied as-cut ...

Brand Name:PAM-XIAMEN

Place of Origin:China

...SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy device,power devices,high-temperature device and optoelectronic Devices...

Brand Name:HMT

Place of Origin:CHINA

...SiC wafer manufacturer SiC substrate supplier Homray Material Technology offers semiconductor silicon carbide wafers,4H-SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy device,power devices,high-temperature device...

Brand Name:Original Factory

Model Number:MSC030SDA330B

Place of Origin:CN

...SiC SBD SIC Integrated Circuit Chip TO-247-2 SiC Schottky​ Product Description Of MSC030SDA330B MSC030SDA330B The silicon carbide (SiC) power Schottky barrier diode (SBD) , the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. MSC030SDA330B device is a 3300 V, 30 A SiC SBD...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

...SBD (SiC SBD) is a power discrete device, a kind of SBD rectifier diode, designed for high frequency and high temperature applications. It is distinctively characterized by its extremely low reverse recovery current and strong anti-surge current ability. Silicon Carbide SBD...

Brand Name:Mingrui

Model Number:XF- 478

Place of Origin:China

Advanced Alumina Ceramic Piece / Substrate / Sheets for Medical Device Key words: Alumina Ceramic Piece Application: Alumina ceramic is mainly used in large power equipment, IC MOS tube, IGBT chip heat conducting insulation, high frequency power supply, ...

Brand Name:ZG

Model Number:MS

Place of Origin:CHINA

...device , LED , sensor and detector applications . With an ideal crystal structure , ZnO wafer ( Zinc oxide ) has a 2% lattice mismatch to GaN , that is much less than the lattice mismatch of sapphire wafer and SiC wafer . ZnO wafer is one of the most suitable substrate for using as GaN