semiconductor device high voltage igbt

Brand Name:Lingxun

Place of Origin:China

Semiconductor Device Ultra High Voltage IGBT With High Input Impedance *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-...

Brand Name:IXYS

Model Number:IXGH24N170

Place of Origin:CHINA

...High Voltage IGBT IXGH24 IGBT 1700V 50A 250W TO247AD Discrete Semiconductor Products Specification:High Voltage IGBT NPT 1700 V 50 A 250 W Through Hole TO-247AD Part number IXGH24N170 Category Discrete Semiconductor Products 　 Transistors - IGBTs - Single Mfr IXYS Series - Package Tube Part Status Active IGBT Type NPT Voltage...

Brand Name:INFINEON

Model Number:FF450R12KT4

Place of Origin:Original

... requirements of modern electronic systems. With its advanced features and reliable performance, this module offers exceptional power handling capabilities and efficient operation. Features 1:High Power Handling: The

Brand Name:Original Factory

Model Number:CM900HG-130X

Place of Origin:CN

..., and improved efficiency. It is ideal for use in power electronics equipment, such as traction and large industrial machines. Specification Of CM900HG-130X Rated Voltage (Vces)/

Place of Origin:Beijing China

Brand Name:power-sem

Model Number:PSHI512F33

...high reliability and high power high voltage IGBT drive;Drive 3300 v, 1500a HM - IGBT module, plug and play.With IGBT switch state hint of models are available to support the multilevel applications. Application ● Traction ● SVG ● Active power filter ● Medium-voltage converter ● Mine inverter ● Medium-voltage...

Place of Origin:China

Brand Name:HENGFENGYOU

Model Number:KYN61-40.5

...movable metal closed switch device high voltage switch gear KYN61-40.5 series Metal-clad withdrawable AC metal-enclosed switchgear cabinet is a new type of product recently designed and developed by Xi'an High Voltage Electrical Research Institute. The ...

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:IXSN35N120U1

... Detail: High Voltage IGBT with Diode Description: VCES = 1200 V IC25 = 70 A VCE(sat) = 4 V Applications: ● International standard package mini BLOC (ISOTOP) compatible ● Aluminium-nitride isolation - high power dissipation ● Isolation voltage 3000...

Brand Name:THOR

Model Number:TRS5-A12

Place of Origin:CHINA

Light indicates lightning protection device High voltage arrester Product description Surge protector is the lightning protection measures taken by Zhejiang toer Electric Co., Ltd. for the electrical system, which is used to prevent ...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Product Description: SiC Power Semiconductor is an advanced electric power semiconductor technology composed of silicon carbide (SiC). This technology can effectively reduce energy losses and improve the efficiency of power conversion. It is designed to ...

Brand Name:CL

Model Number:7D/10D/14D/20D

Place of Origin:CHINA

Product Description: The MOV has an Insulation Resistance of ≥1000MΩ, which means that it is highly resistant to current leakage. This protects the component from damage caused by short circuits or other electrical faults. The MOV's Dielectric Strength of ...

Brand Name:SAILRAY

Model Number:XD3-3.5/100

Place of Origin:CHINA

...Integrated high quality glass tube Description: This tube, XD3-3.5/100 is designed for general diagnostic x-ray unit and available for a nominal tube voltage with self-rectified circuit. XD3-3.5/100 tube has two focus. The integrated high quality tube with

Brand Name:IXYS

Model Number:IXGH24N170

...High Voltage IGBT IXGH24 IGBT 1700V 50A 250W TO247AD Discrete Semiconductor Products Specification:High Voltage IGBT NPT 1700 V 50 A 250 W Through Hole TO-247AD Part number IXGH24N170 Category Discrete Semiconductor Products 　 Transistors - IGBTs - Single Mfr IXYS Series - Package Tube Part Status Active IGBT Type NPT Voltage...

Brand Name:Microchip

Model Number:APT25GT120BRG

Place of Origin:USA

...Semiconductors APT25GT120BRG TO-247-3 IGBT Transistors Product Description: The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed. Application: • Low Forward Voltage Drop • High...

Brand Name:Infineon

Model Number:BSM75GB120DN2

Place of Origin:Germany

...-bridge Off state voltage max: 600V Collector current: 75A Power: 625W Max. forward impulse current: 150A Case: AG-34MM-1 Electrical mounting: screw Mounting: screw Operating temperature: -40...125°C Gate - emitter voltage: ±20V Item Number:

Brand Name:GDZX

Model Number:ZGF-S series water cooled generator through water DC high voltage generator

Place of Origin:Hubei, China

...high voltage generator Product introduction ZGF-S series water internal cooling generator through DC high voltage test device adopts medium frequency voltage doubling circuit. Pioneered the application of PWM pulse width modulation technology and high-power IGBT devices...

Brand Name:Infineon Technologies

Model Number:IHW30N135R5XKSA1

Place of Origin:original

...-gate bipolar transistor (IGBT) power module. This device is designed for high-frequency switching applications and provides a high blocking voltage of 1300V, a low on-state voltage drop of 2V, and low capacitance. It is suitable for use in a variety of

Brand Name:Infineon Technologies

Model Number:SPW35N60C3

Product Range IGBT CoolMOS Discrete Semiconductors SPW35N60C3 MOSFET N-Ch 650V 34.6A TO247-3 App Characteristics New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv /dt rated Ultra low effective capacitances ...

Brand Name:Original

Model Number:LM3429MH/NOPB

LM3429MH/NOPB LM3429MHX/NOPB Power Semiconductor Devices LED Driver IC 1 Features ·LM3429-Q1 is AEC-Q100 Grade 1 Qualified for Automotive Applications VRange From 4.5V to 75 V Adjustable Current Sense Voltage High-Side Current Sensing 2-Ω, 1-A Peak ...

Brand Name:zmkj

Model Number:4inch--N,4H-semi

Place of Origin:china

...semiconductor device, Application areas 1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN, diodes, IGBT, MOSFET 2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED Advantagement • Low lattice mismatch • High...