semiconductor transistors sic durnace

Brand Name:TANKBLUE

Model Number:4h-n

Place of Origin:CHINA

4inch 6inch 4H-N sic wafers dummy Prime Production grade for SBD MOS Device,4H-N 4inch 6inch Sic Wafers Semiconductor High Crystal Quality For Demanding Power Electronics, 4H-N 8inch TANKBLUE Brand Semiconductor Substrate SIC Silicon Carbide Wafer For ...

Brand Name:Original Factory

Model Number:IMZ120R090M1H

Place of Origin:CN

... MOSFET Transistors. Specification Of IMZ120R090M1H Part Number IMZ120R090M1H Product Status Active FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to ...

Brand Name:Infineon Technologies IR

Model Number:IRFB4110PBF

Product Range Field Effect Transistor Semiconductors Discrete Semiconductors Transistors MOSFET IRFB4110PBF MOSFET MOSFT 100V 180A 4.5mOhm 150nC TO-220-3 N-Channel App Characteristics Features High Efficiency ...

Brand Name:ROHM Semiconductor

Model Number:DTC123YUAT106

Place of Origin:CHINA

...Semiconductor Transistors Digital BJT NPN 50V 100mA 200mW 3-Pin DTC123YUAT106 DTC123YUA Series 50 V 100 mA Surface Mount NPN Digital Transistor - SC-70 Related product number: Mfr Part # Description Package DTC123EM3T5G TRANS PREBIAS NPN 50V SOT723 SOT-723 DTC123JET1G TRANS PREBIAS NPN 50V 100MA SC75 SC-75, SOT-416 DTC123JM3T5G TRANS PREBIAS NPN 50V SOT723 SOT-723 DTC123YCAT116 NPN 100MA 50V DIGITAL TRANSISTOR...

Brand Name:original

Model Number:TK30E06N1,S1X

Place of Origin:original

...Semiconductors Transistors MOSFET Through Hole . Features (1) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA) Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-220-3 Transistor...

Brand Name:Ruideer

Model Number:Customizable

Place of Origin:China

... semiconductors. They are found in everything from your smartphone or tablet, to even higher power applications such as server farms and solar arrays. More specifically, semiconductors are a key part of the components that make up electronic systems,

Brand Name:AOS

Model Number:AO6405

Place of Origin:original

AO6405 MOSFET Power Electronics P-Channel 30V Surface Mount Discrete Semiconductors Transistors Package 6-TSOP FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - ...

Place of Origin:Guangdong, China

Brand Name:neutral

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Brand Name:Anterwell

Model Number:IS61LV25616AL-10TLI

Place of Origin:original factory

IS61LV25616AL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access time: — 10, 12 ns • CMOS low power operation • Low stand-by power: — Less than 5 mA (typ.) CMOS stand-by • TTL compatible interface levels • ...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

...Semiconductor Field Effect Transistor (SiC MOSFETs) are an advanced type of power device, with high efficiency and excellent performance. SiC MOSFETs feature low on-resistance and high power capabilities, enabling reliable operation and superior switching performance. Based on the national military standard production line, the process is stable and the quality is reliable. The use of SiC...

Brand Name:ZMKJ

Model Number:2inch sic ingots

Place of Origin:CHINA

...SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers, sic crystal ingots sic semiconductor substrates,Silicon Carbide crystal Wafer/ Customzied as-cut sic wafers About Silicon Carbide (SiC)Crystal Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor

Brand Name:PAM-XIAMEN

Place of Origin:China

...Type SiC Semiconductor Wafer, Research Grade,3”Size PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC ...

Brand Name:ANG

Model Number:SIC-W05

Place of Origin:Guangdong, China

... and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it

Brand Name:HMT

Model Number:6 inch

Place of Origin:CHINA

SiC Ingot Factory Conductive SiC Substrate Supplier 6 inch China HMT company supply high quality SiC ingot at competitive price. The thickness of SiC ingot is 15~20mm per PCS. The third generation semiconductor uses Silicon Carbide (SiC)and Gallium Nitride (GaN) as the main materials, which is different from the first generation semiconductor which uses Silicon (Si) and Germanium (Ge) as the main materials, and the second generation semiconductor

Brand Name:ZHENAN

Model Number:Silicon Carbide

Place of Origin:China

...the production of advanced semiconductor devices and high-power electronics. This ultra-high purity poly-crystalline SiC is specifically engineered for applications requiring exceptional thermal conductivity, electrical stability, and mechanical strength.

Brand Name:ZG

Model Number:MS

Place of Origin:CHINA

... material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2

Place of Origin:China

Brand Name:SONGYU

..., ceramics, glass manufacturing, and semiconductor processing. In the metallurgy industry, it can be used in smelting furnaces to provide the high temperatures needed for melting metals. In ceramics and glass manufacturing, it is ...

Categories:RF Transistors

Country/Region:china

QPD1016 RF JFET Transistors DC-1.7 GHz 500W 50V GaN RF Tr Manufacturer: Qorvo Product Category: RF JFET Transistors RoHS: Details Transistor Type: HEMT Technology: GaN SiC Operating Frequency: DC to 1.7 GHz Gain: 23.9 dB Transistor Polarity: N-Channel Vds...

Brand Name:KeGu

Place of Origin:China

Model Number:Customizable

...SiC) Forks, also known as Pressureless Sintered SiC Robotic Arms, represent a breakthrough in material science for precision automation. Engineered using advanced pressureless sintering technology, these forks deliver unparalleled performance in the most demanding semiconductor...

Brand Name:Nexperia USA Inc

Model Number:PBHV8540X,115

...Transistor Discrete Semiconductors PBHV8540X PBHV8540 Nexperia Bipolar (BJT) Transistor 500V 0.5 A NPN A NPN high-voltage low VCEsat (BISS) transistor Discrete Semiconductor Products-A NPN high-voltage low VCEsat (BISS) transistor Description: NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor...