sic sbd power discrete devices

Brand Name:Original Factory

Model Number:MSC030SDA330B

Place of Origin:CN

...SiC SBD SIC Integrated Circuit Chip TO-247-2 SiC Schottky​ Product Description Of MSC030SDA330B MSC030SDA330B The silicon carbide (SiC) power Schottky barrier diode (SBD) , the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. MSC030SDA330B device is a 3300 V, 30 A SiC SBD...

Brand Name:PAM-XIAMEN

Place of Origin:China

...SiC , Research Grade , 6”Size,For Power Electronic Device Applications PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiCsubstrate,Which is applied in GaNepitaxydevice,powerdevices,high-temperature device

Brand Name:Infineon Technoctifier Ilogies/International ReOR

Model Number:IHW30N160R2FKSA1

Product Description IHW30N160R2 IGBTs Transistors H30R1602 Soft Switching Series Power Semiconductors IC IHW30N160R2FKSA1 Soft Switching Series Applications: • Inductive Cooking • Soft Switching Applications Description: TrenchStop® Reverse Conducting (RC...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

...SBD (SiC SBD) is a power discrete device, a kind of SBD rectifier diode, designed for high frequency and high temperature applications. It is distinctively characterized by its extremely low reverse recovery current and strong anti-surge current ability. Silicon Carbide SBD...

Brand Name:tankblue

Model Number:4h-n

Place of Origin:CHINA

4inch 6inch 4H-N sic wafers dummy Prime Production grade for SBD MOS Device 1. Comparison of third-generation semiconductor materials SiC crystal is a third-generation semiconductor material, which has great advantages in low-power, miniaturization, high-...

Brand Name:ZMSH

Place of Origin:China

...superior thermal conductivity, wide bandgap, and chemical stability, SiC wafers enable the fabrication of advanced power devices that deliver higher efficiency, greater reliability, and smaller footprints compared to traditional silicon-based technologies.

Place of Origin:China

...SiC Heating Elements , 1600℃ Silicon Carbide Rod Description MAX TEMPERATURE:: Up To 1600℃ APPLICATION:: Electric Furnaces And Electric Heating Devices PRODUCTS:: SiC Heating Elements SHAPE:: ED/U/W/SC/SCR/DB/G/H/DM POWER SOURCE:: Electric PURITY:: 99.9% High Purity High Light: High Temperature SiC Heating Elements , 1400C SiC Heating Elements , 1600C Silicon Carbide Rod High Temperature SiC...

Brand Name:HMT

Place of Origin:CHINA

...SiC wafer manufacturer SiC substrate supplier Homray Material Technology offers semiconductor silicon carbide wafers,4H-SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy device,power devices,high-temperature device...

Brand Name:Analog Devices Inc.

Model Number:HMC788ALP2ETR

Place of Origin:Multi-origin

... over the 0.5 to 2.7GHz frequency range with a maximum output power of 50W. The device offers an extremely wide instantaneous bandwidth, high efficiency, and excellent linearity performance. Features: • Power Gain of 27dB • Maximum Output Power of

Brand Name:MOLEX

Model Number:2137192081

Place of Origin:USA

...Discrete Semiconductor is one of the most popular electronic components for a variety of applications. It includes a wide range of products, such as rectifiers, diodes, SC-63 and SMA transistors, MOSFETs and other devices. These devices can be used in electrical power systems, automotive, consumer electronics, industrial and medical applications. Discrete Semiconductor offers a wide selection of power...

Brand Name:GE Fanuc

Model Number:IC200MDl240

Place of Origin:USA

... from AC input devices and return the current on the common. Input devices are connected between the input terminals and common terminals. Discrete Input Modules IC200MDL140, IC200MDL141, BXIOIA8120 and BXIOIA8240 provide one group of 8 discrete inputs.

Brand Name:ZHENAN

Model Number:Silicon Carbide

Place of Origin:China

...Sic Description: Why can silicon carbide withstand such high voltages? Power devices, especially MOSFETs, must be able to handle extremely high voltages. SiC can achieve very high breakdown voltages, from 600V to several thousand volts, due to the dielectric breakdown strength of the electric field being about ten times higher than that of silicon. SiC...

Brand Name:Uchi

Model Number:MBR20200F

Place of Origin:Dongguan China

Low Power Loss Schottky Diodes High Switching Frequency For Free Wheeling Diodes​ MBR20200F.pdf Schottky diode Schottky diode, also known as Schottky barrier diode (SBD for short), is a low-power, ultra-high-speed semiconductor device. The most notable ...

Brand Name:Keysight/Agilent

Model Number:B1505A

Place of Origin:Malaysia

...Power Device Analyzer / Curve Tracer Description of Keysight (Agilent) B1505A The Agilent B1505A Power Device Analyzer / Curve Tracer is the only single box solution available today with the capability to characterize high power devices from the sub-picoamp level up to 3000 volts and 40 amps. These capability covers evaluation for new power device using wide band gap materials such as silicon carbide (SiC...

Brand Name:ROHM Semiconductor

Model Number:RB058RSM10STL1

Place of Origin:USA

Discrete Semiconductors RB058RSM10STL1 TO-277A-3 Schottky Diodes Product Description: Our Products are designed and manufactured for application in ordinary electronic equipment (such as AV equipment, OA equipment, telecommunication equipment, home ...

Brand Name:General Electric

Model Number:IC200MDL632

Place of Origin:United States

... discrete remote inputs. These inputs can be either positive logic inputs that receive power from input devices or negative-logic inputs that receive power from the return and return it to the input device. The input devices connect the input terminals and

Brand Name:HUAWEI

Model Number:AR2240C

Place of Origin:CHINA

...3G, voice, and security functions in a single device. At the same time, the router provide enterprises with flexible access and rich interfaces to adapt to a variety of terminals. AR2240C Specification AR2204C Specification ...

Brand Name:original

Model Number:NCV8402ADDR2G

Place of Origin:China

...Power management IC SOIC-8_150mil PMIC LDO IC Chip NCV8402ADDR2G Product Description: NCV8402ADDR2G Dual MOSFET, Dual N Channel, 2A, 42 V, 0.165 OHM, 10 V, 1.8 V New power switch/driver 1:1 N-channel 2A 8-SOIC Current Limit SW 1-IN 1-OUT to 5.4A Automotive 8-PIN SOIC N T/R CV8402D/AD is a dual protected Low−Side Smart Discrete device...

Brand Name:Rohm Semiconductor

Model Number:SCS212AJTLL

Place of Origin:Japan

SCS212AJTLL Diode 650 V 12A Surface Mount TO-263AB​ Datasheet:SCS212AJTLL Category Single Diodes Mfr Rohm Semiconductor Product Status Active Technology SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max) 650 V Current - Average Rectified (Io) ...

Brand Name:HKIVI

Model Number:PCS125-SiC

Place of Origin:China

Product Description: The PCS125 SiC Modular Energy Storage Converter Battery With Soft Switching Technology is a cutting-edge power converter device that offers exceptional performance and flexibility in energy storage applications. Designed with a focus...