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All silicon power transistors wholesalers & silicon power transistors manufacturers come from members. We doesn't provide silicon power transistors products or service, please contact them directly and verify their companies info carefully.
| Total 1516 products from silicon power transistors Manufactures & Suppliers |
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Brand Name:Hua Xuan Yang Model Number:AP12N10D Place of Origin:ShenZhen China ...Power Switch Transistor , Original Silicon Power Transistor General Description: The AP12N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID = 5A RDS(ON) < 140mΩ @ VGS=4.5V Application Battery protection Load switch Uninterruptible power |
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong |
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Place of Origin:MALAYSIA Brand Name:MOTOROLA Model Number:MJ21194 MJ21194 is a COMPLEMENTARY SILICON POWER TRANSISTORS . Part NO: MJ21194 Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products... |
Mega Source Elec.Limited
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Brand Name:ONSEMI Model Number:MJ15025G Place of Origin:Mexico Complementary Silicon Power Transistors Mosfet Semiconductor MJ15025G PNP − MJ15023, MJ15025* Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear ... |
Anterwell Technology Ltd.
Guangdong |
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Categories:RF Transistors Country/Region:china ...Series 20 AMPERE NPN Silicon Power Transistor 400- 500 VOLTS 175 WATTS Category Transistor Mfr Motololar Series - Part Status - Mounting Type - The MJ13333 transistor is designed for high voltage, high–speed, power switching in inductive circuits where ... |
Wisdtech Technology Co.,Limited
Guangdong |
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Place of Origin:ShenZhen China Brand Name:OTOMO Model Number:A42 ...Transistors A42 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :D965A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 310 V VCEO Collector-Emitter Voltage 305 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 200 mA ICM Collector Current -Pulsed 500 mA PC Collector Power... |
Beijing Silk Road Enterprise Management Services Co.,LTD
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Brand Name:ONSEMI Model Number:MMBT4403LT1G Place of Origin:Original MMBT4403LT1G Switching high power mosfet transistors , PNP silicon power transistors High Voltage Transistors NPN Silicon ORDERING INFORMATION Device Order Number Package Type Shipping† MMBT4403LT1 SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBT4403LT1G SOT−23 (... |
ChongMing Group (HK) Int'l Co., Ltd
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Brand Name:SAIKELI Model Number:MJE3055T Place of Origin:China ...Silicon Plastic Power Transistors Description 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS − 75 WATTS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor... |
Shenzhen Sai Collie Technology Co., Ltd.
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Brand Name:Infineon Technologies Model Number:IRF3205PBF Place of Origin:Original ...Silicon Npn Power Transistors 55V 110A 8.0mΩ Power MOSFET Npn Power Transistor Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power... |
Shenzhen Retechip Electronics Co., Ltd
Guangdong |
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Brand Name:Mitsubishi Model Number:RD06HVF1 Place of Origin:CN ... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND |
Shenzhen Koben Electronics Co., Ltd.
Guangdong |
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Brand Name:Infineon Model Number:IRF5210PBF Place of Origin:Original Factory ...Power Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power... |
Shenzhen ATFU Electronics Technology ltd
Guangdong |
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Brand Name:NEC Model Number:2SC2987 Place of Origin:JAPAN 2SC2987 NPN PNP Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1227 ·High power dissipation APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2Collector;... |
DELI ELECTRONICS TECHNOLOGY CO.,LTD
Guangdong |
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Brand Name:Original Factory Model Number:MSC060SMA070B4 Place of Origin:CN ...Transistors in a TO-247 4-lead package with a source sense. Specification Of MSC060SMA070B4 Part Number: MSC060SMA070B4 Technology: SiC Mounting Style: Through Hole Package / Case: TO-247-4 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:REASUNOS Place of Origin:Guangdong, CN ...Silicon Carbide MOSFETs, also known as Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) based on Silicon Carbide, are high-power, high-efficiency electronic components used in a wide variety of applications, including Solar Inverters, High-voltage DC/DC Converters, Motor Drivers, UPS Power Supplies, Switching Power Supplies, and Charging Piles. Featuring an N-type silicon... |
Reasunos Semiconductor Technology Co., Ltd.
Guangdong |
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Brand Name:Huixin Model Number:MMBT3906 SOT-23 Place of Origin:China Silicon SMD Transistor PNP Surface Mount Transistor MMBT3906 SOT-23 MMBT3906 SOT-23 PNP Surface Mount Transistor MMBT3906 SOT-23 Datasheet.pdf FEATURES Complementary Type The NPN Transistor MMBT3904 is Recommended Epitaxial Planar Die Construction MARKING... |
Guangdong Huixin Electronics Technology Co., Ltd.
Guangdong |
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Brand Name:Original brand Model Number:IGT60R070D1ATMA1 Place of Origin:Original ... • Superior commutation ruggedness • Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) Benefits • Improves system efficiency • Improves power density • |
Shenzhen Weitaixu Capacitor Co.,Ltd
Guangdong |
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Brand Name:original Model Number:SIHB22N60E-E3 Place of Origin:Original Manufacturer ... POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor ... |
Shenzhen Huahao Gaosheng Technology Co., Ltd
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Categories:Diodes Transistors Country/Region:china MJE182 POWER TRANSISTOR Bipolar (BJT) Single Transistor NPN 80V TO-225 MJE182G Bipolar (BJT) Single Transistor NPN 80V 3A 1.5W TO-225 Through Hole Most Popular Power Bipolar Transistors JANTX2N2222AUB BCP56-16T1G MJD122T4G BCX5616TA PZT2907AT1G BCP56-16 ... |
Angel Technology Electronics Co
Hongkong |
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Brand Name:NOVA acoustics Model Number:MA-4400 Place of Origin:Guangzhou, China ...Power Amplifier With TOSHIBA Power Transistors (MA-4400) Quick details: Atopt BIG TOSHIBA transistor, very perfect sound Efficent cooling system, ensure the power amplifier stability Classic products, good quality MA Series Power Amplifier Mid-high level amplifier with remarkable performance and reliability we are famous are. High fidelity, Perfect circuit design and high efficient power transistors with fast recovery power |
Guangzhou Nova Acoustics Co., Ltd.
Guangdong |
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Brand Name:INNOTION Model Number:YP01401650T Place of Origin:Jiangsu, China ...Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor... |
Zhongshi Zhihui Technology (suzhou) Co., Ltd.
Jiangsu |
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Brand Name:Diode Triode Transistor Model Number:TIP137 Place of Origin:USA ...Power Transistor Triode TIP137 Product Paramenters Manufacturer: Standard Packaging: Tube Product Category: MOSFET Brand: standard RoHS: Details Configuration: Single Technology: Si Fall Time: 77 ns Mounting Style: Through Hole Height: 16.3 mm Package / Case: TO-220-3 Length: 10.67 mm Transistor... |
ShenZhen QingFengYuan Technology Co.,Ltd.
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