super junction mosfet 650v

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

...Super Junction MOSFET is a power discrete device for LED Driver, PFC Circuit, Switching Power Supply, UPS Of Continuous Power Supply System, and New Energy Power Equipment. It is made by Multi-layer Epitaxy Process, which has excellent Anti EMI and Anti Surge Capabilities compared to Trench Process. It features an ultra-low Junction Capacitance and an ultra small package. Therefore, it is the ideal choice for SJ MOSFET, Super

Brand Name:Original Factory

Model Number:IMZA65R048M1H

Place of Origin:CN

...MOSFET 650V 20A 75W TO-247-4 Package Product Description Of IMZA65R048M1H IMZA65R048M1H is High-Electron-Mobility Transistors (HEMTs) offer fast turn-on and turn-off speeds at minimum switching losses. Specification Of IMZA65R048M1H Part Number: IMZA65R048M1H Virtual Junction...

Place of Origin:China

Brand Name:ONSEMI

Model Number:NVH4L027N65S3F

High Power MOSFET NVH4L027N65S3F SUPERFET III MOSFET 650V 27mohm [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new...

Brand Name:Huixin

Model Number:H10N65

Place of Origin:China

N Channel High Voltage Mosfet 650V 10A High Accuracy RoHS Compliant TO-220F Applications Adapter & Charger SMPS Standby Power AC-DC Switching ...

Brand Name:Infineon

Model Number:SPA04N80C3XKSA1

Place of Origin:China

SPA04N80C3XKSA1 Power MOSFET 800V Ultra-High Voltage 4A Current Low Rds(on) Super Junction Technology Low Gate Charge High Efficiency Halogen-Free Robust Performance for SMPS andamp; Industrial Drives andnbsp; ...

Brand Name:INFINEON

Model Number:IPW65R080CFDA

INFINEON Chip IPW65R080CFDA MOSFET N-CH 650V 43.3A TO247-3 Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-247-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel ...

Brand Name:Toshiba

Model Number:TK090N65Z,S1F(S

Place of Origin:JAPAN

Product Description: Power IC Chip Product Overview Power IC Chip is a type of chip manufactured by Toshiba. It has a wide temperature range from -55℃ to +150℃ and is widely used in many industries. This chip is designed with MOSFET N technology, and ...

Brand Name:Original brand

Model Number:NVHL040N65S3F

Place of Origin:Original

... to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is

Categories:PMIC Chip

Country/Region:china

... of high voltage Super Junction MOSFET with FRD 600V 70A 41mΩ Si Super junction MOSFET with Fast Recovery Diode Applications: Solar inverters • LCD/LED/PDP TV • Telecom/Server Power supplies • AC-...

Brand Name:HT

Model Number:F7N65L TO-220F-3L

Place of Origin:China

...MOSFET 7A 650V Applications In Switching Power Supplies And Adaptors 7A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET...

Categories:Transistors - FETs, MOSFETs - RF

Country/Region:china

... to the data sheet, such as PDF files Docx documents, etc. We have 0912GN-650V high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our ...

Brand Name:SAIKELI

Model Number:STD6N95K5

Place of Origin:China

STB57N65M5 D2PAK MOSFET N channel 650V 42A Description: Type: N-channel drain source voltage (Vdss): 650V continuous drain current (Id): 42A power (Pd): 250W conduction resistance (RDS (on) @ Vgs, Id): 63m Ω @ 10V, 21A threshold voltage (Vgs (th) @ Id): 5V...

Brand Name:Anterwell

Model Number:TK10P60W

Place of Origin:original factory

MOSFETs Silicon N-Channel MOS (DTMOS) TK10P60W Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) ...

Model Number:KIA4N65

Brand Name:Original

Place of Origin:US

Product Description Technology MOSFET Voltage 650V Mounting Type Through Hole Package TO-220F Yonlanda Skype: qyt-yolanda1 Email: yonlandasong(at)quanyuantong.net

Brand Name:TOSHIBA

Model Number:TK35N65W

Place of Origin:Original Factory

...-of-the-art single epitaxial process, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the RDS(on) makes it possible to house lower RDS(on) chips in the same packages.

Model Number:TK10P60W

Place of Origin:original factory

MOSFETs Silicon N-Channel MOS (DTMOS) TK10P60W Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) ...

Brand Name:onsemi

Model Number:FGHL75T65MQDTL4

...packed with fully rated current diode. The FGHL75T65MQDTx IGBTs operate at 175°C maximum junction temperature, 650V collector to emitter voltage, and 75A collector current. These IGBTs feature positive temperature co-efficient for easy parallel operation,

Brand Name:Infineon Technologies

Model Number:SPW47N60C

Place of Origin:USA

Manufacturer: Infineon Product Category: MOSFETs RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-247-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 600 V Id - Continuous ...

Brand Name:Infineon Technologies

Model Number:SPW35N60C3

... low effective capacitances Improved transconductance Basic Data Product Attribute Attribute Value Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case:

Brand Name:INFINEON

Model Number:SPW47N60C3

Place of Origin:CHIAN

SPW47N60C3 MOSFET N-Ch 650V 47A TO247-3 CoolMOS C3 1.Feature Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances 2.Definition of diodes switching characteristics