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All super junction mosfet hv transistor wholesalers & super junction mosfet hv transistor manufacturers come from members. We doesn't provide super junction mosfet hv transistor products or service, please contact them directly and verify their companies info carefully.
| Total 23 products from super junction mosfet hv transistor Manufactures & Suppliers |
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Brand Name:REASUNOS Place of Origin:Guangdong, CN ...Super Junction MOSFET is a power discrete device for LED Driver, PFC Circuit, Switching Power Supply, UPS Of Continuous Power Supply System, and New Energy Power Equipment. It is made by Multi-layer Epitaxy Process, which has excellent Anti EMI and Anti Surge Capabilities compared to Trench Process. It features an ultra-low Junction Capacitance and an ultra small package. Therefore, it is the ideal choice for SJ MOSFET, Super |
Reasunos Semiconductor Technology Co., Ltd.
Guangdong |
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Brand Name:Original brand Model Number:STL26N60DM6 Place of Origin:Original Mosfet Power Transistor STL26N60DM6 MOSFET N-channel 600 V, 175 mOhm typ HV package Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines... |
Shenzhen Weitaixu Capacitor Co.,Ltd
Guangdong |
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Brand Name:VISHAY Model Number:SUD50P06-15L-E3 Place of Origin:Original Manufacturer ...Mosfet Mounting Type: Surface Mount Package: TO-252 High Light: n channel mosfet transistor , n channel transistor SUD50P06-15L-E3 Integrated Circuit IC Chip MOSFET P-CH 60V 50A TO252 TrenchFET Series P-Channel 60 V (D-S), 175 °C MOSFET FEATURES 1, TrenchFET® Power MOSFET 2, 175 °C Junction |
Shenzhen Huahao Gaosheng Technology Co., Ltd
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Brand Name:Infineon Technologies Model Number:SPW24N60C3 Place of Origin:original ...MOSFET Power Transistor High Power High Efficiency Low On Resistance Parameters: - Drain Source Voltage (VDS): 600V - Drain Current (ID): 24A - Gate Source Voltage (VGS): ±20V - Power Dissipation (PD): 150W - RDS(ON): 0.077Ω - Maximum Junction Temperature (Tj): 150°C - Transistor... |
Shenzhen Sai Collie Technology Co., Ltd.
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Brand Name:Hua Xuan Yang Model Number:13P10D Place of Origin:ShenZhen China ...Mosfet Power Transistor For Power Management ESD Protested DESCRIPTION The 13P10D uses advanced trench technology and design to provide excellent RDS(ON) with low gat e charge. It can be used in a wide variety of applications. It is ESD protested. FEATURES VDS =-100V,ID =-13A RDS(ON) <170m @ VGS=-10V (Typ:145m ) Super... |
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong |
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Brand Name:Infineon Model Number:SPA04N80C3XKSA1 Place of Origin:China SPA04N80C3XKSA1 Power MOSFET 800V Ultra-High Voltage 4A Current Low Rds(on) Super Junction Technology Low Gate Charge High Efficiency Halogen-Free Robust Performance for SMPS andamp; Industrial Drives andnbsp; ... |
TOP Electronic Industry Co., Ltd.
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Brand Name:ON Model Number:MURS320T3G MURS320T3G Mosfet Power Transistor Rectifiers 200V 3A Ultrafast Features Small Compact Surface Mountable Package with J−Bend Leads Rectangular Package for Automated Handling High Temperature Glass Passivated Junction Low Forward Voltage Drop (0.71 to 1.... |
ChongMing Group (HK) Int'l Co., Ltd
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Brand Name:Anterwell Model Number:TK10P60W Place of Origin:original factory MOSFETs Silicon N-Channel MOS (DTMOS) TK10P60W Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) ... |
Anterwell Technology Ltd.
Guangdong |
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Categories:PMIC Chip Country/Region:china ... of high voltage Super Junction MOSFET with FRD 600V 70A 41mΩ Si Super junction MOSFET with Fast Recovery Diode Applications: Solar inverters • LCD/LED/PDP TV • Telecom/Server Power supplies • AC-... |
Angel Technology Electronics Co
Hongkong |
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Brand Name:Original Factory Model Number:NVHL050N65S3HF Place of Origin:CN ...MOSFETs Transistors TO-247-3 Product Description Of NVHL050N65S3HF NVHL050N65S3HF is new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. Specification Of NVHL050N65S3HF Part Number NVHL050N65S3HF Series Automotive, AEC-Q101, SuperFET® III FET Type N-Channel Technology MOSFET... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Maplesemi Model Number:SLH60R080SS Place of Origin:Original General Description This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Brand Name:IXYS Model Number:IXTH200N10T Place of Origin:Original Factory ...Transistor IXTH200N10T 200A 100V 5.4 Rds 550W Dc-Dc Converters Description Single MOSFET Die,N-Channel Enhancement Mode Avalanche Rated, Low Qg IXYS Gen1 Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(ON), enabling very low power dissipation. This, combined with wide-ranging operating junction... |
Shenzhen Retechip Electronics Co., Ltd
Guangdong |
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Brand Name:Upperbond Model Number:Maker Place of Origin:China ...one of the basic building blocks of modern electronics. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. 1. MOSFET The metal–oxide–semiconductor field-effect transistor (MOSFET), also |
HK UPPERBOND INDUSTRIAL LIMITED
Hong Kong |
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Place of Origin:US Brand Name:Original Model Number:2SA1837/2SC4793 Product Detail Packaging Bulk Part Status Obsolete Transistor Type PNP Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 230V Vce Saturation (Max) @ Ib, Ic 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max) 1µA (ICBO) DC ... |
Shenzhen Quanyuantong Electronics Co., Ltd.
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Brand Name:UCHI Model Number:D882 Place of Origin:Dongguan China SOT-89 D882 Plastic-Encapsulate Transistors Features Power dissipation MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC ... |
Guangdong Uchi Electronics Co.,Ltd
Guangdong |
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Brand Name:BigFlier Model Number:F-16S-400A-B Place of Origin:ShenZhen ... OPTO Yes Yes Yes Feature: l The firmware is upgraded recently . l Design for skateboard, more functions. l Battery voltage from 15V to 67V for super high voltage version. l Two way communication while |
Shenzhen Flier Electronic Co., Ltd.
Guangdong |
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Brand Name:DIODES Model Number:2N7002DW-7-F Place of Origin:CHINA 2N7002DW-7-F DIODES Trans MOSFET N-CH 60V 0.23A 6-Pin SOT-363 T/R Product Technical Specifications EU RoHS Compliant ECCN (US) EAR99 Part Status Active HTS 8541.21.00.95 Automotive No PPAP No Product Category Small Signal Configuration Dual Channel Mode ... |
Sunbeam Electronics (Hong Kong) Limited
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Brand Name:Original Model Number:LN2302BLT1G Place of Origin:China Original New Transistor Mosfet Diodes SOT-23(SOT-23-3) LN2302BLT1G Products Description: 1. Exceptional on-resistance and maximum DC current capability 2. Super high density cell design for extremely low RDS(ON) 3. S- Prefix for Automotive and Other ... |
Shenzhen Res Electronics Limited
Guangdong |
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Brand Name:ST Model Number:STL3N65M2 Product name:STL3N65M2 Manufacturer: STMicroelectronics Product Category: MOSFET Technology: Si Installation style: SMD/SMT Package/Case: PowerFLAT-3.3x3.3-HV-8 Transistor Polarity: N-Channel Number of channels: 1 Channel Vds-drain-source breakdown voltage... |
Beijing Silk Road Enterprise Management Services Co.,LTD
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Brand Name:VISHAY Model Number:SUD50P06-15L-E3 Place of Origin:Malaysia SUD50P06-15L-E3 Integrated Circuit IC Chip MOSFET P-CH 60V 50A TO252 TrenchFET Series P-Channel 60 V (D-S), 175 °C MOSFET FEATURES 1, TrenchFET® Power MOSFET 2, 175 °C Junction Temperature 3, Compliant to RoHS Directive 2002/95/EC Manufacturer Vishay ... |
Shenzhen Koben Electronics Co., Ltd.
Guangdong |