super junction mosfet low rds on

Brand Name:Lingxun

Model Number:LCS65R1K0D

Place of Origin:China

...Super Junction Mosfet Low On Resistance HV Transistor N-channel Super Junction MOSFET Part No.:LCS65R1K0D Package:TO-252 MAIN CHARACTERISTICS ID:4A VDSS:650V RDSON-typ VGS=10V:880mΩ FEATURES • High Dense Super Junction Design • Excellent Gate Charge x RDS(ON) Product(FOM) • Ultra Low...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

...Super Junction MOSFET is a power discrete device for LED Driver, PFC Circuit, Switching Power Supply, UPS Of Continuous Power Supply System, and New Energy Power Equipment. It is made by Multi-layer Epitaxy Process, which has excellent Anti EMI and Anti Surge Capabilities compared to Trench Process. It features an ultra-low Junction Capacitance and an ultra small package. Therefore, it is the ideal choice for SJ MOSFET, Super

Brand Name:Infineon

Model Number:SPA04N80C3XKSA1

Place of Origin:China

...MOSFET 800V Ultra-High Voltage 4A Current Low Rds(on) Super Junction Technology Low Gate Charge High Efficiency Halogen-Free Robust Performance for SMPS & Industrial Drives Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low...

Brand Name:Infineon Technologies

Model Number:IRFR120NTRLPBF

Place of Origin:Multi-origin

This listing is for one IRFR120NTRLPBF MOSFET Power Electronics. This is an N-channel enhancement mode silicon gate power field effect transistor. Features of the IRFR120NTRLPBF include: • Drain-Source Voltage: 60V • Continuous Drain Current: -11A • Power ...

Brand Name:Anterwell

Model Number:TK10P60W

Place of Origin:original factory

MOSFETs Silicon N-Channel MOS (DTMOS) TK10P60W Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) ...

Brand Name:IXYS

Model Number:IXTH200N10T

Place of Origin:Original Factory

...Rds 550W Dc-Dc Converters Description Single MOSFET Die,N-Channel Enhancement Mode Avalanche Rated, Low Qg IXYS Gen1 Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(ON), enabling very low power dissipation. This, combined with wide-ranging operating junction...

Model Number:TK10P60W

Place of Origin:original factory

MOSFETs Silicon N-Channel MOS (DTMOS) TK10P60W Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) ...

Brand Name:Original Factory

Model Number:SCT011H75G3AG

Place of Origin:CN

... temperature rang is -55°C to 175°C, Very low RDS(on) over the entire temperature range. Specification Of SCT011H75G3AG Part Number: SCT011H75G3AG Package: H²PAK-7 Gate-Source Voltage: -10V To 22V Thermal Resistance, Junction-To-Ambient: 50 °C/W

Brand Name:Maplesemi

Model Number:SLH60R080SS

Place of Origin:Original

...MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for AC/DC power conversion Features 47A, 600V, RDS(on) typ.= 68mΩ@VGS =10 V Low...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:HXY4606

HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. This complementary N and P channel MOSFET configurationis ideal for low Input Voltage inverter applications. . N-...

Brand Name:Original brand

Model Number:NVHL040N65S3F

Place of Origin:Original

... for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is

Categories:Discrete Semiconductors

Country/Region:china

...mosfet For health care,wireless charger Applications: health care, wireless charger PSF70060B is PowerCubeSemi’s second generation of high voltage Super Junction MOSFET with FRD that is utilizing charge balance technology for outstanding low on-resistance and lower ...

Brand Name:Original

Model Number:LN2302BLT1G

Place of Origin:China

...extremely low RDS(ON) 3. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 4. N-channel ...

Categories:Onsemi Ic

Country/Region:china

...MOSFET Drain-Source Breakdown Voltage: 100V Continuous Drain Current: 10A On-Resistance: 10mΩ (typ) Operating Junction Temperature: -40°C to 150°C Package: SO-8 The NCP1060AD100R2G is an N-channel power MOSFET from ON Semiconductor. Key Features: Provides efficient switching of up to 10A loads Industry-leading low 10mΩ RDS...