through hole n channel mosfet

Brand Name:IOR

Model Number:IRFP260NPBF

Place of Origin:CHINA

...Channel MOSFET 200V 50A 300W Through Hole TO-247AC RoHS Compliant Other Name:64-6005PBF Feature l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free FET Type N-Channel Technology MOSFET...

Brand Name:Infineon Technologies

Model Number:SPW47N60C

Place of Origin:USA

Manufacturer: Infineon Product Category: MOSFETs RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-247-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 600 V Id - Continuous ...

Brand Name:Infineon Technologies

Model Number:IPP075N15N3G

Place of Origin:original

...: 150V • Gate Threshold Voltage: 3V • Power Dissipation: 390W • Operating Temperature Range: -55°C to 175°C • Mounting Style: Through Hole • Package/Case: TO-220F-3 Why buy from us >>> Fast / Safely / Conveniently • SKL is a

Brand Name:IR

Model Number:IRFM250

...MOSFET POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number RDS(on) ID IRFM250 0.100 Ω 27.4A IRFM250 JANTX2N7225 JANTXV2N7225 REF:MIL-PRF-19500/592 200V, N-CHANNEL HEXFET® MOSFET TECHNOLOGY Product Introduction The IRFM250 is a high-power N-channel MOSFET designed for various applications, including power supplies, motor control, and switching circuits. This MOSFET...

Brand Name:Original Factory

Model Number:IMYH200R012M1H

Place of Origin:CN

..., Through Hole, package is TO-247-4. Specification Of IMYH200R012M1H Part Number IMYH200R012M1H FET Type N-Channel Technology SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss) 2000 V Current - Continuous Drain (Id) @ ...

Brand Name:Anterwell

Model Number:IRFP9240PBF

Place of Origin:original factory

... V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with

Brand Name:Infineon Technologies

Model Number:IRFB7434PBF

Place of Origin:United States

IRFB7434PBF N-Channel 40 V 195A (Tc) 294W (Tc) Through Hole TO-220AB Features: Category Single FETs, MOSFETs Mfr Infineon Technologies Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V Current - ...

Brand Name:TOSHIBA

Model Number:TK7A90E,S4X

...��道模式: Enhancement 商标名: MOSVIII 封装: Tube 商标: Toshiba 配置: Single 下降时间: 15 ns 高度: 15 mm 长度: 10 mm 产品类型: MOSFETs 上升时间: 20 ns 系列: TK7A90E 工厂包装数量: 50 子类别: Transistors 晶体管类型:

Model Number:IRFP9240PBF

Place of Origin:original factory

... V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with

Brand Name:Infineon Technologies IR

Model Number:IRFB3206PBF

...Mosfet Single N-Channel IR 60V Product Range 60V Single N-Channel IR MOSFET™ in a TO-220AB package App Characteristics Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Industry standard through-hole...

Brand Name:Original Brand

Model Number:IRF3710PBF

Place of Origin:Original Manufacturer

...ORIGINAL INTEGRATED CIRCUITS CHIP IC Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - ...

Brand Name:DELI

Model Number:AOTF14N50

Place of Origin:Original

Part Number: AOTF14N50 Description: MOSFET N-CH 500V 14A TO220F Category: Discrete Semiconductor Products>>FETs - Single Packaging:Tube FET Type:N-Channel Technology:MOSFET (Metal Oxide) Drain to Source Voltage (Vdss):500V Current - Continuous Drain (Id...

Brand Name:ON

Model Number:NTHL040N65S3F

Place of Origin:Original

MOSFET NTHL040N65S3F Programmable IC Chips Electronic Components IC Original ON PRODUCT DESCRIPTION Part number # NTHL040N65S3F is manufactured by ON Technologies and distributed by Jalixin. As one of the leading distributors of electronic products, we ...

Model Number:2SK2225-E

Place of Origin:Guangdong, China

Brand Name:original

... Tube 3.Suitable for switching regulator, DC-DC converter Technological Parameters: Operating Temperature 150℃ (TJ) Mounting Type Through Hole Package / Case TO-3-3 Drain to Source Voltage (Vdss) 1500 V Power -

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:IRF1404ZPBF

... Hole TO-220AB Specification: Category Discrete Semiconductor Products 　 Transistors - FETs, MOSFETs - Single Mfr Infineon Technologies Series HEXFET® Package Tube FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss)

Brand Name:STMicroelectronics

Model Number:STP200N3LL

Place of Origin:Shenzhen, China

... power loss Distinctive Characteristics : Part No: STP200N3LL Description: MOSFET N-channel 30 V, 2 mOhm typ., 120 A, STripFET H6 Power MOSFET in a TO-220 package Product Category: MOSFET Technology: Si Mounting Style: Through Hole Package / Case: TO-220-3

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:IRF1404ZPBF

Place of Origin:CHINA

...Transistors - FETs, MOSFETs - Single Mfr Infineon Technologies Series HEXFET® Package Tube FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive ...

Brand Name:original

Model Number:TK30E06N1,S1X

Place of Origin:original

...MOSFET Through Hole . Features (1) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA) Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel

Brand Name:INFINEON

Model Number:IRF100B201

... Chip IRF100B201 MOSFET N-CH 100V 192A TO220AB Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-...

Model Number:2N3820

Brand Name:Original

Place of Origin:US

Product Description Product Detail Packaging Bulk Part Status Obsolete FET Type P-Channel Voltage - Breakdown (V(BR)GSS) 20V Current - Drain (Idss) @ Vds (Vgs=0) 300µA @ 10V Voltage - Cutoff (VGS off) @ Id 8V @ 10µA Input Capacitance (Ciss) (Max) @ Vds ...