to 220 n mosfet ic chip

Place of Origin:original

Brand Name:original

Model Number:FDP18N50

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Brand Name:INFINEON

Model Number:BTS282ZE3230

Place of Origin:INFINEON

... RoHS: N Technology: Si Mounting Style: Through Hole Package / Case: TO-220-7 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 49 V Id - Continuous Drain ...

Brand Name:original

Model Number:BSS138K

...IC Chip BSS138K IC Chip Products Description: N-Channel MOSFET BSS138K, 220 mA, Vds=50 V, 3-Pin SOT-23 Package Enhancement mode field effect transistors (FETs) are produced using Fairchild's patented high cell density DMOS technology. This high-density process is designed to minimize on-state resistance, providing robust and reliable performance and fast switching. Fairchild offers a large portfolio of MOSFET

Brand Name:Toshiba

Model Number:TK100E06N1,S1X

Place of Origin:JAPAN

Product Description: TK100E06N1,S1X Power IC Chip is a high-performance, high-reliability TO-220-3 package semiconductor device designed to provide optimal performance and reliability for Power IC applications. It is manufactured by Toshiba, a leading ...

Brand Name:Original Brand

Model Number:IRF3710PBF

Place of Origin:Original Manufacturer

... ELECTRONIC COMPONENT BRAND NEW AND ORIGINAL INTEGRATED CIRCUITS CHIP IC Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - ...

Model Number:STP65NF06

Place of Origin:original factory

STD65NF06 STP65NF06 N-channel 60V - 11.5mΩ - 60A - DPAK/TO-220 STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STD65NF06 60V <14mΩ 60A STP65NF06 60V <14mΩ 60A ■ Standard level gate drive ■ 100% avalanche tested Description This Power MOSFET...

Brand Name:original

Model Number:TK30E06N1,S1X

Place of Origin:original

TK30E06N1,S1X Discrete Semiconductors Transistors MOSFET Through Hole . Features (1) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (...

Brand Name:INFINEON

Model Number:IRFB4227PBF

INFINEON Chip IRFB4227PBF MOSFET N-CH 200V 65A TO220AB Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - ...

Model Number:IRF520PBF

Brand Name:Original

Place of Origin:US

Product Description Product Detail Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 9.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (...

Model Number:IRF740

Place of Origin:Guangdong, China

Brand Name:ALL BRAND

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Brand Name:Infineon Technologies

Model Number:IPP023N10N5

Place of Origin:Mult-origin

Product Name: N-Channel Enhancement Mode MOSFET Product Model: IPP023N10N5 Parameter: Drain-Source Voltage: 100V Continuous Drain Current: 23A Pulsed Drain Current: 115A Maximum Drain Source On-State Resistance: 0.0081Ω Gate-Source Voltage: ±20V Power ...

Brand Name:Original

Model Number:SQP90P06-07L-GE3

Place of Origin:Original

MOSFET SQP90P06-07L-GE3 Chips Diode Transistor Chips IC PRODUCT DESCRIPTION MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified PRODUCT PROPERTIES Manufacturer: Vishay Product Category: MOSFET Technology: Si Mounting Style: Through Hole Package/Case: TO-220-3 ...

Categories:Onsemi Ic

Country/Region:china

Here is the English description of the NCV8570BMN180R2G chip: Function: N-channel Power MOSFET Drain-Source Breakdown Voltage: 30V Continuous Drain Current: 8.57A On-Resistance: 180mΩ (typ) Fast Switching Speed TO-220 Full Pack Package The NCV8570BMN180R2G...