to 251 silicon mosfet

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:WSF6012

QM4803D​ N-Ch and P-Channel MOSFET Description The WSF6012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The ...

Brand Name:SANYO

Model Number:FW163-TL-E

Quick Detail: P-Channel Silicon MOSFET General-Purpose Switching Device Specifications: part no. FW163-TL-E　 Manufacturer 　SANYO supply ability 　20000 datecode 　11+ package 　SOP remark new and original stock Competitive Advantage: Warranty :180 days ! Free...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

... power and high frequency performance. Their main advantages include their reliability and stability, which is based on the national military standard production line. Silicon Carbide MOSFETs are

Brand Name:AMPFORT

Model Number:KTY81 2KOhm

Place of Origin:Dongguan,Guangdong,China

... temperature coefficient in the whole temperature range, suitable for measurement and control system, temperature compensation. - Since the structural material is mainly semiconductor single crystal silicon, it is also

Brand Name:Semelab / TT Electronics

Model Number:D2085UK

Place of Origin:UK

...MOSFET Manufacturer: TT Electronics Product Category: TT Electronics Brand: Semelab / TT Electronics The D2085UK is a push-pull RF power transistor MOSFET that operates at a voltage of 28V and can handle a power output of 120W. It is designed for use in the frequency range of 1MHz to 1000MHz. Silicon MOSFET: MRF140: RF MOSFET...

Brand Name:Vishay Siliconix

Model Number:IRFBE30PBF

Place of Origin:original

IRFBE30PBF MOSFET Power Electronics 30V N-Channel MOSFET Silicon Material ​ Product Description: The IRFBE30PBF is a high-performance N-channel MOSFET designed for maximum efficiency in a wide range of applications. It features a low on-state resistance...

Brand Name:ONSEMI

Model Number:BD135

Place of Origin:Original

BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ...

Brand Name:Ruideer

Model Number:Customizable

Place of Origin:China

Silicon Carbide as a Semiconductor Semiconductor Transistors And MOSFETs Produced By Silicon Carbide Sintering Furnace Nearly every electronic item you encounter on a day-to-day basis contains semiconductors. They are found in everything from your ...

Brand Name:Original Factory

Model Number:SCTWA50N120

Place of Origin:CN

...MOSFET SCTWA50N120 N-Channel Silicon Carbide Power MOSFET Through Hole HiP247 Product Description Of SCTWA50N120 SCTWA50N120 Silicon carbide Power MOSFET 1200 V, 65 A, 59 mΩ (typ., TJ=150 °C) in an HiP247™ long leads package. Specification Of SCTWA50N120 Part Number: SCTWA50N120 FET Type: N-Channel Technology: SiCFET (Silicon...

Brand Name:ZMSH

Model Number:4H Semi-insulating SiC substarte/wafer

Place of Origin:China

6H-N Semi-insulating SiC substarte/wafer for MOSFETs,JFETs BJTs,high resistivity wide bandgap Semi-insulating SiC substarte/wafer's abstract Semi-insulating silicon carbide (SiC) substrates/wafers have emerged as crucial materials in the realm of advanced ...

Brand Name:Infineon

Model Number:IRF640NPBF

Place of Origin:Original Factory

...MOSFET Power Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs...

Brand Name:IOR

Model Number:IRF540NS

Place of Origin:CHINA

... Avalanche Rated Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and

Brand Name:Infineon Technologies

Model Number:IRF3205PBF

Place of Origin:Original

...Silicon Npn Power Transistors 55V 110A 8.0mΩ Power MOSFET Npn Power Transistor Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs...

Brand Name:Infineon Technologies

Model Number:BF999 E6327

Place of Origin:CHINA

BF 999 E6327 RF MOSFET Transistors Silicon N-Channel MOSFET Triode 1.Silicon N-Channel MOSFET Triode For high-frequency stages up to 300 MHz preferably in FM applications • Pb-free (RoHS compliant) package1) 2.Why choose us? ...

Model Number:2N2646

Place of Origin:Original

2N2646 SILICON UNIJUNCTION TRANSISTORS switching power mosfet low power mosfet SILICON UNIJUNCTION TRANSISTORS Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point current and valley current as zell as ...

Brand Name:ZHENAN

Model Number:Silicon Carbide

Place of Origin:China

...Silicon Carbide Is Used as a Refractory in Ceramic Production Sic Description: Why can silicon carbide withstand such high voltages? Power devices, especially MOSFETs, must be able to handle extremely high voltages. SiC can achieve very high breakdown voltages, from 600V to several thousand volts, due to the dielectric breakdown strength of the electric field being about ten times higher than that of silicon...

Brand Name:Upperbond

Model Number:Maker

Place of Origin:China

...Nano Through-Hole Version Mosfet Irfz44ns For Kretek Machines Silicon Transistor The first working silicon transistor was developed at Bell Labs on January 26, 1954, by Morris Tanenbaum. The first commercial silicon transistor was produced by Texas ...

Model Number:2SK2225-E

Place of Origin:Guangdong, China

Brand Name:original

MOSFET N-CH 1500V 2A IC Chip TO-3P 2SK2225-80-E-T2 2SK2225 Products Description: 1. Silicon N Channel MOS FET Silicon N Channel MOS FET, through hole N Channel 2A (Ta) 50W (Tc) TO 3PFM 2.Trans MOSFET N-CH Si 1.5kV 2A 3-PIN (3+Tab) TO 3PFM Tube 3.Suitable...

Brand Name:UCHI

Model Number:3904W /3906W

Place of Origin:Dongguan China

SOT-323 3904W /3906W NPN and PNP Silicon FEATURES -These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications. - Pb-Free Package is available. ...

Brand Name:ZMSH

Model Number:SiC seed wafer

Place of Origin:CHINA

...155 2inch-12inch customized Used for manufacturing MOSFETs Silicon Carbide (SiC) seed crystal wafers serve as fundamental materials in the semiconductor industry. Manufactured from high-purity silicon carbide (SiC) raw materials through Physical Vapor...