transistor collector

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:3DD13003

...Transistors 3DD13003 TRANSISTOR (NPN) FEATURE · power switching applications MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 1.5 A PC Collector...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:D882

...Transistors D882 TRANSISTOR (NPN) FEATURE Power Dissipation MARKING D882=Device code Solid dot = Green molding compound device, if none, the normal device XX=Code ORDERING INFORMATION Part Number Package Packing Method Pack Quantity D882 TO-126 Bulk 200pcs/Bag D882-TU TO-126 Tube 60pcs/Tube MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector

Model Number:JTD2SC1623W

...a SOT-23 plastic-encapsulated NPN transistor from SHENZHEN JTD ELECTRONICS CO.,LTD. It features a collector current of 0.1A and is complementary to the 2SA812 transistor. This transistor is suitable for various electronic applications requiring ...

Model Number:2N2907A

Aviation Parts 2N2907A Bipolar Transistors Collector- Emitter Voltage 60 V Descriptions of Aviation Parts: The 2N2905A and 2N2907A are silicon Planar Epitaxial PNP transistors in Jedec TO-39 (for 2N2905A) and in Jedec TO-18 (for 2N2907A) metal case. They...

Brand Name:FAIRCHILD

Model Number:KSP2907A

Place of Origin:Malaysia

...Transistor / General Purpose NPN Transistor General Purpose Transistor • Collector-Emitter Voltage: VCEO= 60V • Collector Power Dissipation: PC (max)=625mW • Refer to KSP2907 for graphs PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector...

Brand Name:Microchip / Microsemi

Model Number:JAN2N2222A

Place of Origin:ORIGINAL

...Transistors - BJT 50 V Small-Signal BJT Manufacturer: Microchip Product Category: Bipolar Transistors - BJT RoHS: N Technology: Si Mounting Style: Through Hole Package / Case: TO-18-3 Transistor Polarity: NPN Configuration: Single Maximum DC Collector Current: 800 mA Collector- Emitter Voltage VCEO Max: 50 V Collector- Base Voltage VCBO: 75 V Emitter- Base Voltage VEBO: 6 V Collector...

Place of Origin:/

Model Number:BC818-40

...Transistors BC818-40 SOT-23 New and Original For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807, BC808 (PNP) ​ Transistor Type NPN Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 25V Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA Current - Collector...

Brand Name:Huixin

Model Number:S8050 SOT-23

Place of Origin:China

...Transistor S8050 SOT-23 Complimentary to S8550 Silicon Material S8050 TRANSISTOR (NPN) S8050 SOT-23 Datasheet.pdf FEATURES Complimentary to S8550 Collector Current: IC=0.5A MARKING: J3Y MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Collector Current -Continuous IC 0.5 A Collector...

Brand Name:ON

Model Number:FGH60N60SFDTU

Place of Origin:Original

...IGBT Transistors Technology: Si Package / Case: TO-247AB-3 Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 2.3 V Maximum Gate Emitter Voltage: - 20 V, + 20 V Continuous Collector Current at 25 C: 120 A

Brand Name:original

Model Number:2N3439

Place of Origin:original

...Transistors Through Hole TO-39-3 Manufacturer: original Product Category: Bipolar Transistors - BJT RoHS: N Mounting Style: Through Hole Package / Case: TO-39-3 Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 350 V Collector- Base Voltage VCBO: 450 V Emitter- Base Voltage VEBO: 7 V Collector-Emitter Saturation Voltage: 500 mV Maximum DC Collector...

Brand Name:KEC

Model Number:KTD1047

Place of Origin:Korean

...Transistor Complementary to KTB817 for 60w High Power Amplifier Application CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 140 V Emitter-Base Voltage VEBO 6 V Collector Current DC IC 12 A Pulse ICP 15 Collector...

Place of Origin:US

Brand Name:Original

Model Number:TIP50T

...Transistors - BJT RoHS: RoHS Compliant Details Mounting Style: Through Hole Package / Case: TO-220-3 Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 400 V Collector- Base Voltage VCBO: 500 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 10 MHz Maximum Operating Temperature: + 150 C Series: TIP50 Continuous Collector

Brand Name:RENESAS

Model Number:2SD1899

Place of Origin:JAPAN

...Transistors Silicon NPN PowerTransistor DESCRIPTION ·Low collector saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High transition frequency applications Specifications Category: BJT - General Purpose Manufacturer: RENESAS TECHNOLOGY Collector Current (DC) : 3(A) Collector-Base Voltage: 60(V) Collector...

Brand Name:original

Model Number:PBSS4160T,215

Place of Origin:Original Manufacturer

...TRANSISTOR PNP COMPLEMENT PBSS4160T Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: NPN Mounting Type: Surface Mount Package: SOT23 High Light: n channel mosfet transistor , n channel transistor PBSS4160T NPN low VCEsat transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low collector-emitter saturation voltage VCEsat • High collector...

Model Number:PBSS4160T,215

Place of Origin:CN

...transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • Reduces printed-circuit board area required • Cost effective replacement for medium power transistor...

Brand Name:Original

Model Number:MMUN2214LT1G

Place of Origin:Original

...Transistors - Pre-Biased 100mA 50V BRT NPN IC PRODUCT DESCRIPTION Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN PRODUCT PROPERTIES Manufacturer: onsemi Product Category: Bipolar Transistors - Pre-Biased Configuration: Single Transistor Polarity: NPN Typical Input Resistor: 10 kOhms Typical Resistor Ratio: 0.21 Mounting Style: SMD/SMT Package / Case: SOT-23-3 DC Collector/Base Gain hfe Min: 80 Collector...

Brand Name:IXYS

Model Number:IXGA20N250HV

...Transistor) provides a square Reverse Bias Safe Operating Area (RBSOA) and 10µs short circuit withstanding capability. The IXGA20N250HV features 2500V collector-to-emitter voltage, 12A collector current at +110°C, and 3.1V collector-emitter saturation voltage. The device has a ...

Brand Name:Original

Model Number:MMBT3904

...Transistors 3904 TRANSISTOR NPN Complementary to MMBT3906 MMBT3904 TRANSISTOR (NPN) FEATURES z Complementary to MMBT3906 MARKING:1AM MAXIMUM RATINGS (T a=25°C unless otherwise noted) Parameter Value Unit Collector-Base Voltage 60 V Collector-Emitter Voltage 40 V Emitter-Base Voltage 6 V Collector Current 200 mA Collector...

Brand Name:Original

Model Number:MMBT3904

...Transistors NPN 40V 200mA 1AM 100-300 SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR (NPN) FEATURES z Complementary to MMBT3906 MARKING:1AM MAXIMUM RATINGS (T a=25°C unless otherwise noted) Parameter Value Unit Collector-Base Voltage 60 v Collector-Emitter Voltage 40 v Emitter-Base Voltage 6 v Collector Current 200 mA Collector...

Brand Name:Original Factory

Model Number:IXBX50N360HV

Place of Origin:CN

... MOS Transistor. Specification Of IXBX50N360HV Part Number IXBX50N360HV Voltage - Collector Emitter Breakdown (Max) 3600 V Current - Collector (Ic) (Max) 125 A Current - Collector Pulsed (Icm) 420 A Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 50A Power - Max 660 W