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All transistor mosfet igbt wholesalers & transistor mosfet igbt manufacturers come from members. We doesn't provide transistor mosfet igbt products or service, please contact them directly and verify their companies info carefully.
| Total 141 products from transistor mosfet igbt Manufactures & Suppliers |
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Brand Name:Infineon Technologies Model Number:SPW35N60C3 ... low effective capacitances Improved transconductance Basic Data Product Attribute Attribute Value Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Brand Name:Original Model Number:MTB15P04J3 Place of Origin:Original ...MOSFET/IGBT/Diode Switching/Transistor IC Chips Small MOQ , Wholesale price , Fast delivery . Product details Type IGBT transistor Conditional New and original MOQ 10pieces SPQ 50 pieces PAYMENT T/T , PAYPAL ,WESTERN UNION,ALIPAY Shipment DHL . FEDEX , UPS , EMS , POST Product Keywords MTB15P04J3 all kinds of IGBT transistor... |
Shenzhen Weitaixu Capacitor Co.,Ltd
Guangdong |
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Brand Name:IR Original Model Number:IR21094STRPBF Place of Origin:Original & New IR21094STRPBF high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS... |
Shenzhen ATFU Electronics Technology ltd
Guangdong |
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Brand Name:SAIKELI Model Number:AO4486 Place of Origin:China AO4486 SOP-8 N P channel field effect transistor (MOSFET) MOS tube Specification Shipping: 1, We can shipping all over the world by DHL, UPS, FEdex, TNT and EMS. The packaging is very safe and strong. Please nitfy me you have any special needs 2, It will... |
Shenzhen Sai Collie Technology Co., Ltd.
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Brand Name:Hua Xuan Yang Model Number:1503C1 Place of Origin:ShenZhen China ..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the |
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong |
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Brand Name:OTOMO Model Number:1503C1 Place of Origin:ShenZhen China ..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the |
Beijing Silk Road Enterprise Management Services Co.,LTD
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Brand Name:Diode Triode Transistor Model Number:MBRF30100VT+ Place of Origin:USA ...Transistor Mosfet Diode Array 600V 15A To247 MBRF30100VT+ Product Paramenters Manufacturer: Standard Packaging: Tube Product Category: MOSFET Brand: standard RoHS: Details Configuration: Single Technology: Si Fall Time: 77 ns Mounting Style: Through Hole Height: 16.3 mm Package / Case: TO-220-3 Length: 10.67 mm Transistor Polarity: N-Channel Product Type: MOSFET... |
ShenZhen QingFengYuan Technology Co.,Ltd.
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Brand Name:Semelab / TT Electronics Model Number:D2085UK Place of Origin:UK ...TRANSISTOR MOSFET Manufacturer: TT Electronics Product Category: TT Electronics Brand: Semelab / TT Electronics The D2085UK is a push-pull RF power transistor MOSFET that operates at a voltage of 28V and can handle a power output of 120W. It is designed for use in the frequency range of 1MHz to 1000MHz. Silicon MOSFET: MRF140: RF MOSFET... |
Wisdtech Technology Co.,Limited
Guangdong |
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Place of Origin:US Brand Name:Original Model Number:FGH40N60SMD Product Detail Packaging Tube Part Status Active IGBT Type Field Stop Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 80A Current - Collector Pulsed (Icm) 120A Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 40A Power - Max 349W ... |
Shenzhen Quanyuantong Electronics Co., Ltd.
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Place of Origin:CN Brand Name:Original Factory Model Number:F4-17MR12W1M1H-B76 Automotive IGBT Modules F4-17MR12W1M1H-B76 1200V 17mohm CoolSiC MOSFET IGBT Modules [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + ... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:IXYS Model Number:IXGH40N60C2D1 Place of Origin:USA IXGH40N60C2D1 # 75A 600V 300W DIP TO-247 HiPer FASTTM IGBTs w/ Diode Mosfet IGBT C2-Class High Speed IGBTs Features Very High Frequency IGBT Square RBSOA High Current Handling Capability Applications Uninterruptible Power Supplies (UPS) Switch-Mode and ... |
ChongMing Group (HK) Int'l Co., Ltd
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Model Number:IRFP250NPBF Place of Origin:China Brand Name:original Transistor MOSFET N channel 30A 200V 75MOHM 10V MOS tube IRFP250NPBF Products Description: 1.IRFP250NPBF transistor, MOSFET, N channel, 30 A, 200 V, 75 MoHM, 10 V, 4 V 2.The to-247 package is preferred for Commercial-industrial applications wherehigher ... |
Shenzhen Res Electronics Limited
Guangdong |
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Brand Name:ONSEMI Model Number:MJ15025G Place of Origin:Mexico Complementary Silicon Power Transistors Mosfet Semiconductor MJ15025G PNP − MJ15023, MJ15025* Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear ... |
Anterwell Technology Ltd.
Guangdong |
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Brand Name:GINRI Model Number:JR-8J Place of Origin:CHINA ...Transistor MOSFET Module 24V Trigger 8 CH For Home Intelligent Control What is transistor Transistor, a solid-state semiconductor device, can be used for detection, rectification, amplification, switching, regulation, signal modulation, and many other functions. The transistor acts as a variable switch, controlling the outflow of current based on the input voltage, so the transistor... |
Wenzhou Ginri Power Automation Co., Ltd.
Zhejiang |
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Brand Name:TI Model Number:CSD75207W15 Place of Origin:Philippines ... Category Power MOSFET Configuration Dual Process Technology NexFET Channel Mode Enhancement Channel Type P Number of Elements per Chip 2 Maximum Gate ... |
Sunbeam Electronics (Hong Kong) Limited
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Brand Name:REASUNOS Place of Origin:Guangdong, CN ... is designed to support applications with high frequency up to 60KHz, and offers a current density of 400A/c㎡. High Power IGBT is an ideal choice for use in a wide range of applications requiring high speed switching and high power. Technical Parameters: |
Reasunos Semiconductor Technology Co., Ltd.
Guangdong |
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Brand Name:vishay/ours Model Number:ss36 Place of Origin:CHINA 3A SS36 SMB Surface Mounted Schottky Barrier Rectifier Diode Transistors MOSFET Bridge rectifiers electronic component Name: 3A SS32 SS33 SS34 SS35 SS36 SS39 SS310 SS315 SS320 SMA/DO-... |
Angel Technology Electronics Co
Hongkong |
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Brand Name:Original Model Number:SIR422DP-T1-GE3 Place of Origin:Original SIR422DP-T1-GE3 IC Chips Integrated Circuits IC Transistor MOSFET SO-8 PRODUCT DESCRIPTION Part number # SIR422DP-T1-GE3 is manufactured by Vishay Technologies and distributed by Jalixin. As one of the leading distributors of electronic products, we carry... |
Hong Kong Jia Li Xin Technology Limited
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Brand Name:IXYS Model Number:IXGH40N60C2D1 Place of Origin:USA IXGH40N60C2D1 # 75A 600V 300W DIP TO-247 HiPer FASTTM IGBTs w/ Diode Mosfet IGBT C2-Class High Speed IGBTs Features Very High Frequency IGBT Square RBSOA High Current Handling Capability Applications Uninterruptible Power Supplies (UPS) Switch-Mode and ... |
DELI ELECTRONICS TECHNOLOGY CO.,LTD
Guangdong |
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Brand Name:Shareway Model Number:FA2659-AL Place of Origin:Guangdong China ...Drive Transformer For Coupled MOSFET and IGBT Gate Drive Circuits Product description: Gate Drive Transformer Designed for transformer coupled MOSFET and IGBT gate drive circuits Feature: Designed for transformer coupled MOSFET and IGBT gate drive circuits... |
SHAREWAY TECHNOLOGY CO., LTD.
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