uav rf ldmos transistor

Brand Name:Freescale

Model Number:MRFE6VP6300HR5

Place of Origin:USA

MRFE6VP6300HR5 RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 26.5dB 300W NI-780-4 These high ruggedness devices are designed for use in high ...

Place of Origin:PHILIPPINE

Model Number:BLC6G22-75

BLC6G22-75 is a Power LDMOS transistor. Part NO: BLC6G22-75 Brand: Date Code: 07+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ...

Place of Origin:Guangdong, China

Brand Name:LDSK

... of the module and the shape and structure of the module. Place of Origin Guangdong, China Brand Name LDSK Place of Origin Guangdong, China Product Name RF power amplifier module(LDMOS)

Brand Name:VBE

Model Number:VBE36015E2

Place of Origin:CHINA

Brand Name:Texas Instruments

Model Number:PD85035S-E

Place of Origin:Malaysia

...RF power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035-E boasts the excellent gain, linearity and reliability of ST's latest LDMOS...

Brand Name:NENGXUN

Model Number:NX-MD50W7-10

Place of Origin:CHINA

700-1000MHz RF Module for Anti Drones Elevate your communication capabilities with our versatile range of RF Power Amplifier Modules. Engineered to deliver exceptional performance across various frequency bands, these modules are available in power options...

Brand Name:Analog Devices Inc.

Model Number:AD9364BBCZ

Place of Origin:Multi-origin

AD9364BBCZ RF Power Transistor High Performing Reliable Power Solutions Product Name: AD9364BBCZ RF Power Transistors Description: The AD9364BBCZ RF power transistor is a high-power class AB transistor designed for use in commercial, industrial and ...

Place of Origin:CN

Brand Name:Original Factory

Model Number:A2I20D020NR1

Wireless Communication Module A2I20D020NR1 RF LDMOS Wideband Integrated Power Amplifiers [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + ...

Categories:RF Transistors

Country/Region:china

BLF6G10LS-135RN RF MOSFET Transistors Trans MOSFET N-CH 65V 32A 3-Pin Manufacturer: Ampleon Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 32 A Vds - Drain-Source Breakdown Voltage: 65...

Brand Name:Texas Instruments

Model Number:TPS62141RGTR

Place of Origin:N/S

NPN PNP Transistor Texas Instruments/TI TPS62141RGTR Vin (Min) (V) 3 Vin (Max) (V) 17 Vout (Min) (V) 1.8 Vout (Max) (V) 1.8 Iout (Max) (A) 2 Iq (Typ) (uA) 17 Switching frequency (Min) (kHz) 1250 Switching frequency (Max) (kHz) 2500 Features Enable, Light ...

Brand Name:TX TELSIG

Model Number:TX-JZ01

Place of Origin:China

... the interference of its communication to make the drone UAV communication failure. Shield range: 360 degree coverage, 2000-3000meter Shield channels/signals: WIFI 2.4G, WIFI 5....

Brand Name:original

Model Number:MRF9045LR1

Place of Origin:original

...RF Bipolar Transistors Si original in stock The ASI MRF9045LR1 is a high voltage, gold-metalized, laterally diffused metal oxide semiconductor. Ideal for today's RF power amplifier Applications. Product Category: RF MOSFET Transistors RoHS: Details Transistor...

Place of Origin:Jiangsu, China

Brand Name:SZHUAHI

Model Number:YJM12100B

SZHUAHI 100W UAV RF Jammer Blocker for 1150-1330MHz Wireless Signal RF Jamming Modules Anti Drone Product Description YJM12100B is a special frequency sweep source for 1150-1330MHz signals. This module has the ...

Model Number:ynx-Anti Drone Module

Place of Origin:Guangdong, China

Brand Name:yetnorson

...Supplier Type OEM/ODM Application RF Uav Anti Drone Signal Jamming Frequency Range 5700~5900MHz Input Power(dBm) ≤0-20dBm or Customized Impedance 50 Ohm Working current <10-16A Voltage DC:22-28 V ALC Range(dB) ≥5 RF In/Out Connector SMA-Female Working ...

Brand Name:NXP

Model Number:BFS505

Place of Origin:CHINA

...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF...

Brand Name:ST

Model Number:PD57018-E

Product name:PD57018-E Manufacturer: STMicroelectronics Product Category: RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Transistor Polarity: N-Channel Technology: Si Id-Continuous Drain Current: 2.5 A Vds-drain-source breakdown voltage...

Model Number:BLF881

Place of Origin:Malaysia

Brand Name:KAIGENG

BLF881 N/A Electronic Components IC MCU Microcontroller Integrated Circuits BLF881 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:...

Brand Name:VISHAY

Model Number:S525T-GS08

Place of Origin:USA

VISHAY IC S525T-GS08 Surface Mount SOT-223 S525T Product Paramenters Manufacturer: Vishay Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 30 mA Vds - Drain-Source Breakdown Voltage: ...

Model Number:PDFL-AMG024J

Place of Origin:China

Brand Name:OEM

Padi Fly main business includes UAV detector module, handheld detection, backpack detection, vehicle detection, UAV accessories, etc. Product Description Detailed Photos Company Profile Padi Fly Technology Co. Ltd specializes in the field of advanced ...

Model Number:BFS505

Place of Origin:CHINA

...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF...