ultra low 40m rds on mosfet

Brand Name:Toshiba

Model Number:SSM3K361R,LF

Place of Origin:China

...MOSFET with Ultra-Low 40mandOmega; RDS(on) SOT-23 Package High Power Density Superior Efficiency Fast Switching and Logic Level Control for Compact Designs andnbsp; Featuresandnbsp; AEC-Q101 qualified (Please see the orderable part number list) 175℃ MOSFET 4.5 V drive Low drain-source on-resistance : RDS(ON) = 65 mΩ (typ.) (@VGS = 4.5 V) RDS...

Brand Name:Infineon Technologies

Model Number:IPD50R380CEAUMA1

Place of Origin:original

...MOSFET Power Electronics Ultra Low RDS on High Power and High Reliability FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500 V Current - Continuous Drain (Id) @ 25°C 14.1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 13V Rds...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Low Rds(ON) Trench Process Transistor for Motor Driver Application *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, canvas, svg...

Brand Name:Anterwell

Model Number:AP4511GD

Place of Origin:original factory

...MOSFET ▼ Low Gate Charge ▼ Fast Switching Speed ▼ PDIP-8 Package N-CH BVDSS 35V RDS(ON) 25mΩ ID 7A P-CH BVDSS -35V RDS(ON) 40mΩ ID -6.1A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low...

Model Number:AP4511GD

Place of Origin:original factory

...MOSFET ▼ Low Gate Charge ▼ Fast Switching Speed ▼ PDIP-8 Package N-CH BVDSS 35V RDS(ON) 25mΩ ID 7A P-CH BVDSS -35V RDS(ON) 40mΩ ID -6.1A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low...

Brand Name:Hua Xuan Yang

Model Number:AP30N10P

Place of Origin:ShenZhen China

...Mosfet Power Transistor For Motor Control 30A 100V TO-220 Mosfet Power Transistor Description: The AP30N10P uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. Mosfet Power Transistor Features VDS = 100V ID = 30 A RDS(ON) < 40mΩ @ VGS=10V Mosfet...

Brand Name:JUYI

Model Number:JY13M

Place of Origin:China

... MOSFETs may be used in H-bridge, Inverters and other applications. FEATURES Device VBR(DSS) RDS(ON) MAX TJ=25ºC Package N-Channel 40V <30mΩ@VGS=10V,ID=12A TO252-4L <40mΩ@VGS=4.5V,ID=8A P-Channel -40V <45mΩ@VGS=-10V,ID=

Brand Name:IOR

Model Number:IRFR9024NTRPBF

Place of Origin:CHINA

... P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 175 mOhm @ 6.6A, 10V Vgs(th) (Max) @

Brand Name:ON Semiconductor

Model Number:MMDF3N04HDR2

Place of Origin:Shenzhen, China

... high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. These devices are designed for use in low voltage, high speed switching applications where power efficiency is important.

Brand Name:JUYI

Model Number:JY13M

Place of Origin:China

... MOSFETs may be used in H-bridge, Inverters and other applications. FEATURES Device VBR(DSS) RDS(ON) MAX TJ=25ºC Package N-Channel 40V <30mΩ@VGS=10V,ID=12A TO252-4L <40mΩ@VGS=4.5V,ID=8A P-Channel -40V <45mΩ@VGS=-10V,ID=

Brand Name:JEUNKEI

Model Number:JY13M

Place of Origin:China

... and other applications. Features: Device VBR(DSS) RDS(ON) MAX TJ=25ºC Package N-Channel 40V <30mΩ@VGS=10V,ID=12A TO252-4L <40mΩ@VGS=4.5V,ID=8A P-Channel -40V <45mΩ@VGS=-10V,ID=-12A <66mΩ@VGS=-4

Brand Name:FORTUNE

Model Number:FS8205A

Place of Origin:TAIWAN

...MOSFET (20V, 6A) 1.Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) 2.Features RDS(on)=38mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A • High Density Cell Design for Ultra Low...

Brand Name:Huixin

Model Number:MMBT7002K

Place of Origin:China

...MOSFET 60V 115mA N-Channel SC-70 SOT-323 These Devices are Pb−Free and are RoHS Compliant , Ultra−Small Surface Mount Package,Low Input/Output Leakage, Fast Switching Speed,Improved system efficiency. MMBT7002W SOT-323 Datasheet.pdf FEATURES 1. High density cell design for low RDS...

Brand Name:Alpha & Omega Semiconductor Inc.

Model Number:AO4407A

AO4407A P-Channel Enhancement Mode Field Effect Transistor The AO4407A uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM ...

Categories:Onsemi Ic

Country/Region:china

... performance to ultra-compact SOT-323 packages. As a 27A N-channel MOSFET optimized for space-constrained circuits, it maximizes power density from minimum dimensions. Key Features: 60V voltage rating 27A continuous current capability 35mΩ typical RDS(on)

Place of Origin:Malaysia

Model Number:SPW47N60C3

...RDS(on) in TO 247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances Applications: SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 Specifications: Datasheets SPW47N60C3 Product Photos TO-247 Pkg Product Training Modules CoolMOS™ CP High Voltage MOSFETs...

Brand Name:Original Factory

Model Number:AUIRF5210STRL

Place of Origin:China

... device for use in Automotive and a wide variety of other applications. Advanced Process Technology P-Channel MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating Product Specifications Part Number AUIRF5210STRL Id - Continuous Drain Current: 38 A Rds On -