ultra low 8m rds on n channel mosfet

Brand Name:onsemi

Model Number:FDMC86261P

Place of Origin:original

...Ultra-Low On-Resistance Dual N-Channel MOSFET with High Current and Power Density Capabilities 150V FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150 V Current - Continuous Drain (Id) @ 25°C 2.7A (Ta), 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds...

Brand Name:Toshiba

Model Number:CUS08F30

Place of Origin:China

CUS08F30 andnbsp; 1. Applications andbull; High-Speed Switching 2. Features (1) Low forward voltage: VF(3) = 0.40 V (typ.) (2) General-purpose USC package, equivalent to SOD-323 and SC-76 packages. 3. Packaging and Internal Circuit Type Description Select...

Brand Name:IOR

Model Number:IRFR9024NTRPBF

Place of Origin:CHINA

... Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 175 mOhm @ 6.6A, 10V Vgs(th) (Max) @

Brand Name:AOSMD

Model Number:AO4449

Place of Origin:brand new

P-Channel Enhancement Mode Field Effect Transistor Features VDS (V) = -30V ID = -7 A (VGS = -10V) RDS(ON) < 34mΩ (VGS = -10V) RDS(ON) < 54mΩ (VGS = -4.5V) General Description The AO4449 uses advanced trench technology to provide excellent RDS(ON), and ...

Model Number:AP4511GD

Place of Origin:original factory

...CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Fast Switching Speed ▼ PDIP-8 Package N-CH BVDSS 35V RDS(ON) 25mΩ ID 7A P-CH BVDSS -35V RDS(ON) 40mΩ ID -6.1A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Absolute Maximum Ratings Symbol Parameter Rating Units N-channel P-channel...

Brand Name:ON Semiconductor

Model Number:MMDF3N04HDR2

Place of Origin:Shenzhen, China

... high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. These devices are designed for use in low voltage, high speed switching applications where power efficiency is important.

Brand Name:FORTUNE

Model Number:FS8205A

Place of Origin:TAIWAN

...Channel Enhancement-Mode MOSFET (20V, 6A) 1.Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) 2.Features RDS(on)=38mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A • High Density Cell Design for Ultra Low...

Brand Name:Original Factory

Model Number:PSMN4R8-100BSE

Place of Origin:CN

...,the PSMN4R8-100BSE complements the latest "hot-swap" controllers - robust enough to withstand substantial inrush currents during turn on, whilst offering a low RDS(on) characteristic to keep temperatures down and efficiency up

Brand Name:Huixin

Model Number:MMBT7002K

Place of Origin:China

...MOSFET 60V 115mA N-Channel SC-70 SOT-323 These Devices are Pb−Free and are RoHS Compliant , Ultra−Small Surface Mount Package,Low Input/Output Leakage, Fast Switching Speed,Improved system efficiency. MMBT7002W SOT-323 Datasheet.pdf FEATURES 1. High density cell design for low RDS...

Brand Name:Alpha & Omega Semiconductor Inc.

Model Number:AO4407A

AO4407A P-Channel Enhancement Mode Field Effect Transistor The AO4407A uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM ...

Brand Name:JEUNKEI

Model Number:JY4P7M

Place of Origin:China

General Description: The JY4P7M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on‐resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for ...

Categories:Onsemi Ic

Country/Region:china

...Channel Power MOSFET Drain-Source Breakdown Voltage: 180V Continuous Drain Current per Channel: 15A On-Resistance per Channel: 1.8mΩ (max) Operating Temperature: -55°C to 175°C Package: Power SO-16 The NCP161AFCT180T2G is a dual N-channel power MOSFET from ON Semiconductor. Key Features: Integrated dual switch capable of 15A per channel Industry-leading low 1.8mΩ RDS

Brand Name:Original Factory

Model Number:AUIRF5210STRL

Place of Origin:China

... device for use in Automotive and a wide variety of other applications. Advanced Process Technology P-Channel MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating Product Specifications Part Number AUIRF5210STRL Id - Continuous Drain Current: 38 A Rds On -