umc5n transistor emitter resistor

Brand Name:TANKII

Model Number:6J12

Place of Origin:Shanghai, China

...Emitter Resistor Product Description: Manganin alloy is one kind of electric resistance alloy which is mainly made of copper, manganese and nickel. It has character of small resistance temperature coefficient,low thermal EMF vs copper E,outstanding long-term stability,good weldability and workability,which makes it to be superior precision surveying instrument.such as resistor...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:A94

...Transistors A94 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :A94 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter...

Place of Origin:United States

#detail_decorate_root .magic-0{width:750px}#detail_decorate_root .magic-1{overflow:hidden;width:750px;height:405.95399188092017px;margin-top:0;margin-bottom:0;margin-left:0;margin-right:0}#detail_decorate_root .magic-2{margin-top:0;margin-left:0;width:...

Brand Name:onsemi

Model Number:MMUN2233LT1G

Place of Origin:USA

...Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236) Category Discrete Semiconductor Products Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors Mfr onsemi Series - Product Status Active Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100 mA Voltage - Collector Emitter Breakdown (Max) 50 V Resistor - Base (R1) 4.7 kOhms Resistor - Emitter...

Brand Name:Anterwell

Model Number:2SB1316

Place of Origin:original factory

...) Absolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO -100 V Collector-emitter voltage VCEO -100 V Emitter-base voltage VEBO -8 V Collector current IC -2 A

Brand Name:Original

Model Number:MMUN2214LT1G

Place of Origin:Original

...Transistors - Pre-Biased 100mA 50V BRT NPN IC PRODUCT DESCRIPTION Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN PRODUCT PROPERTIES Manufacturer: onsemi Product Category: Bipolar Transistors - Pre-Biased Configuration: Single Transistor Polarity: NPN Typical Input Resistor: 10 kOhms Typical Resistor Ratio: 0.21 Mounting Style: SMD/SMT Package / Case: SOT-23-3 DC Collector/Base Gain hfe Min: 80 Collector- Emitter...

Categories:Bipolar Transistor Arrays, Pre-Biased

Country/Region:china

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount SOT-353

Model Number:BFG135

Place of Origin:original factory

... NPN 7GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated emitter-ballasting resistors, ensure high output ...

Brand Name:Microchip / Microsemi

Model Number:JAN2N2222A

Place of Origin:ORIGINAL

...Transistors - BJT 50 V Small-Signal BJT Manufacturer: Microchip Product Category: Bipolar Transistors - BJT RoHS: N Technology: Si Mounting Style: Through Hole Package / Case: TO-18-3 Transistor Polarity: NPN Configuration: Single Maximum DC Collector Current: 800 mA Collector- Emitter Voltage VCEO Max: 50 V Collector- Base Voltage VCBO: 75 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter...

Brand Name:ON

Model Number:FGH60N60SFDTU

Place of Origin:Original

...IGBT Transistors Technology: Si Package / Case: TO-247AB-3 Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 2.3 V Maximum Gate Emitter Voltage: - 20 V, + 20 V Continuous Collector Current at 25 C: 120 A

Brand Name:NXP

Model Number:PIMN31

Place of Origin:Malaysia

...-74) Surface-Mounted Device (SMD) plastic package. 1.2 Features I 500 mA output current capability I Built-in bias resistors I Simplifies circuit design I Reduces component count I Reduces pick and place costs I AEC-Q101 qualified 1.3

Place of Origin:US

Brand Name:Original

Model Number:2SA1941 2SC5198

...- Base Voltage VEBO: - 5 V Collector-Emitter Saturation Voltage: 2 V Gain Bandwidth Product fT: 30 MHz Maximum Operating Temperature: + 150 C Continuous Collector Current: ...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:A42

...Transistors A42 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :D965A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 310 V VCEO Collector-Emitter Voltage 305 V VEBO Emitter...

Brand Name:original

Model Number:2N3439

Place of Origin:original

...Transistors Through Hole TO-39-3 Manufacturer: original Product Category: Bipolar Transistors - BJT RoHS: N Mounting Style: Through Hole Package / Case: TO-39-3 Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 350 V Collector- Base Voltage VCBO: 450 V Emitter- Base Voltage VEBO: 7 V Collector-Emitter...

Brand Name:Huixin

Model Number:MMBT3906 SOT-23

Place of Origin:China

...Transistor PNP Surface Mount Transistor MMBT3906 SOT-23 MMBT3906 SOT-23 PNP Surface Mount Transistor MMBT3906 SOT-23 Datasheet.pdf FEATURES Complementary Type The NPN Transistor MMBT3904 is Recommended Epitaxial Planar Die Construction MARKING: 2A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter...

Place of Origin:Guangdong, China

Brand Name:creatall

...Transistor Tester Multimeter Display TFT For Diode Triode MOS/PNP/NPN Capacitor Resistor Tr Product Description: This is a cost-efective and widely used transistor detector. (an be used to detect NPN and PNP transistors, capacitors, resistors, diodes, triodes,Nchannel and p-channel MOSFETs, thyristors, batteries, etc. Can also be used to detect infrared waveforms.​ Features: Can be widely used to detect NPN and PNP transistor

Brand Name:KEC

Model Number:KTD1047

Place of Origin:Korean

KTD1047 NPN Transistor Complementary to KTB817 for 60w High Power Amplifier Application CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 140 V Emitter-Base Voltage VEBO 6 V Collector Current DC IC 12 A ...

Model Number:MJ11033G

Aviation Parts MJ11033G Darlington Transistors Emitter- Base Voltage 5 V Descriptions of Aviation Parts: High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features...

Place of Origin:Japan

Brand Name:NEC

Model Number:HR1F3P

On-chip resistor PNP silicon epitaxial transistor HR1F3P NEC SOT-89 FEATURES • Up to 2A high current drives such as IC outputs and actuators available • On-chip bias resistor • Low power consumption during drive ​ Part No HR1F3P Manufacturer NEC ...

Model Number:NTTFS3A08PZTAG

Place of Origin:America

Brand Name:ON

...Transistors FETs MOSFETs Single P-CH 20V 9A 8WDFN P-Channel Products Description: 1. -20V,-15A,6.7 Mω, P-channel power MOSFET 2. P-channel 20V 9A (Ta) 840mW (Ta) Surface Mount 8-wdfn (3.3x3.3) 3. Trans MOSFET P-CH 20V 22A 8-Pin WDFN EP T/R 4. components -20V,-15A,6.7m ,P channel power MOSFETMOS NTTFS3A08PZTAG Improve Your Efficiency: One- Stop Electronic Components BOM List Kitting Service IC Diode Transistor Capacitor Resistor