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| Categories | MOSFET Power Electronics |
|---|---|
| Brand Name: | onsemi |
| Model Number: | NTTFS115P10M5 |
| Place of Origin: | original |
| MOQ: | 1 |
| Price: | Negotiable |
| Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
| Supply Ability: | 999999 |
| Delivery Time: | 1-3 days |
| Packaging Details: | standard |
| Drain to Source Voltage (Vdss): | 100 V |
| Current - Continuous Drain (Id) @ 25°C: | 2A (Ta), 13A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Rds On (Max) @ Id, Vgs: | 120mOhm @ 2.4A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 45µA |
| Gate Charge (Qg) (Max) @ Vgs: | 9.2 nC @ 10 V |
NTTFS115P10M5 8-WDFN MOSFET Power Electronics Module Single P-Channel WDFN8 -100 V 120 m -13 A
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 5.88mOhm @ 30A, 10V | |
Vgs(th) (Max) @ Id | 2.2V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 18.6 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 987 pF @ 15 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.49W (Ta), 23.6W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
Product Listing:
ON Semiconductor NTTFS115P10M5 – 8-WDFN MOSFET Power Electronics.
Features:
• Low RDS(on)
• Low gate charge
• High current capability
• High power dissipation
• RoHS compliant
Specifications:
• Maximum Drain Source Voltage: 100 V
• Maximum Gate Source Voltage: ±20 V
• Maximum Drain Current: 115 A
• Maximum Power Dissipation: 4.2 W
• Maximum Junction Temperature: 150°C

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