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| Categories | MOSFET Power Electronics |
|---|---|
| Brand Name: | onsemi |
| Model Number: | FDS2582 |
| Place of Origin: | Multi-origin |
| MOQ: | 1 |
| Price: | Negotiable |
| Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
| Supply Ability: | 999999 |
| Delivery Time: | 1-7days |
| Packaging Details: | Standard |
| Product Type: | MOSFET Power Electronics |
| Manufacturer: | onsemi |
| Manufacturer Product Number: | FDS2582 |
| Description: | MOSFET N-CH 150V 4.1A 8SOIC |
| Manufacturer Standard Lead Time: | 1-7days |
| Detailed Description: | N-Channel 150 V 4.1A (Ta) 2.5W (Ta) Surface Mount 8-SOIC |
FDS2582 - N-Channel MOSFET Power Electronics
The FDS2582 is an N-Channel Enhancement Mode MOSFET designed for low voltage, high current switching applications. It has an excellent RDS(on) rating of only 5 mΩ, providing superior efficiency for DC-DC converters and other power management applications.
Features:
-VDSS: 20V
-RDS(on): 5 mΩ
-ID: 8.2A
-Package: DPAK
-Pd: 25.5W
-VGS(th): 2.5V
-Qg: 7.5nC
Product Status | Active | |
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Rds On (Max) @ Id, Vgs | 66mOhm @ 4.1A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1290 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.5W (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | 8-SOIC | |
Package / Case | ||
Base Product Number |
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