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BF999 E6327 RF Silicon N Channel MOSFET Triode 200mW

Categories Electronic Integrated Circuits
Brand Name: Infineon Technologies
Model Number: BF999 E6327
Certification: ROHS
Place of Origin: CHINA
MOQ: 10PCS
Price: NEGOTIABLE
Payment Terms: T/T, Western Union
Supply Ability: 12000PCS/WEEK
Delivery Time: 2-3DAYS
Packaging Details: 3000PCS/REEL
Transistor Polarity: N-Channel
Technology: Si
Id - Continuous Drain Current: 30 A
Vds - Drain-Source Breakdown Voltage: 20 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Height: 1 mm
Length: 2.9 mm
Width: 1.3 mm
Pd - Power Dissipation: 200mW
Vgs - Gate-Source Voltage: 6.5 V
Factory Pack Quantity: 3000
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BF999 E6327 RF Silicon N Channel MOSFET Triode 200mW

BF 999 E6327 RF MOSFET Transistors Silicon N-Channel MOSFET Triode

1.Silicon N-Channel MOSFET Triode

For high-frequency stages up to 300 MHz preferably in FM applications
• Pb-free (RoHS compliant) package1)



2.Why choose us?

100% new and originao with Advantage price
High efficiency
Fast Delivery
Professional team service
10 Years Experience Electronic components
Electronic components Agent
Advantage logistic discount
Excellent After-sales Service

Quality BF999 E6327 RF Silicon N Channel MOSFET Triode 200mW for sale
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