Undoped InAs Substrate , 2”, Test Grade -Indium Arsenide Wafer Supplier

Undoped InAs Substrate , 2”, Test Grade -Indium Arsenide Wafer Supplier
PAM-XIAMEN provides single crystal InAs(Indium arsenide) wafer for infrared detectors, photovoltaic photodiodes detectors, diode lasers in lower noise or higher-power applications at room temperature. in diameter up to 4 inch. Indium Arsenide ( InAs ) crystal is formed by two elements , Indium and Arsenide , growth by Liquid Encapsulated Czochralski ( LEC ) method or VGF method . InAs wafer is is similar to gallium arsenide and is a direct bandgap material.
Indium arsenide is sometimes used together with indium phosphide. Alloyed with gallium arsenide it forms indium gallium arsenide - a material with band gap dependent on In/Ga ratio, a method principally similar to alloying indium nitride with gallium nitride to yield indium gallium nitride. PAM-XIAMEN can provide epi ready grade InAs wafer for your MOCVD & MBE epitaxial application .Please contact our engineer team for more wafer information.

2" InAs Wafer Specification

What is the InAs Process?
InAs wafers must be prepared prior to device fabrication. To start, they must be completely cleaned to remove any damage that might have occurred during the slicing process. The wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage. This allows for the attainment of super-flat mirror-like surfaces with a remaining roughness on an atomic scale. After that is completed, the wafer is ready for fabrication.

Band structure and carrier concentration of InAs Wafer

Basic Parameters

Band structure and carrier concentration of InAs. Important minima of the conduction band and maxima of the valence band. Eg= 0.35 eV EL= 1.08 eV EX= 1.37 eV Eso = 0.41 eV

Temperature Dependences

Temperature dependence of the direct energy gap

Eg = 0.415 - 2.76·10-4·T2/(T+83) (eV),

where T is temperature in degrees K (0 <T < 300).

Effective density of states in the conduction band

Nc≈1.68·1013·T3/2 (cm-3).

Effective density of states in the valence band

Nv≈ 1.27·1015·T3/2(cm-3).

	The temperature dependences of the intrinsic carrier concentration.
	Fermi level versus temperature for different concentrations of shallow donors and acceptors.

Dependences on Hydrostatic Pressure

Eg≈Eg(0) + 4.8·10-3P (eV)
EL≈ EL(0) + 3.2·10-3P (eV)

where P is pressure in kbar

Energy Gap Narrowing at High Doping Levels

Energy gap narrowing versus donor (Curve 1) and acceptor (Curve 2 ) doping density. Curves are calculated according Points show experimental results for n-InAs

For n-type InAs

ΔEg = 14.0·10-9·Nd1/3 + 1.97·10-7·Nd1/4 + 57.9·10-12·Nd1/2 (eV)

For p-type InAs

ΔEg = 8.34·10-9·Na1/3 + 2.91·10-7·Na1/4 + 4.53·10-12·Na1/2 (eV)

Effective Masses

Electrons:

Electron effective mass versus electron concentration

Holes:

Effective mass of density of states mv = 0.41mo

Donors and Acceptors

Ionization energies of shallow donors

≥ 0.001(eV): Se, S, Te, Ge, Si, Sn, Cu

Ionization energies of shallow acceptors, eV

Are You Looking for an InAs Wafer?
PAM-XIAMEN is your go-to place for everything wafers, including InAs wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!

Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two main field: SiC&GaN material(SiC wafer and epitaxy, GaN wafer and epi wafer) and III-V material (III-V substrate and epi service: InP wafer, GaSb wafer, GaAs wafer, InAs wafer and InSb wafer). Our wafers are widely used in LED semiconductor lighting,wireless communication, solar power, infrared device, laser, detectors and semiconductor power devices, including power devices, high temperature devices and photoelectric devices, therein, GaN wafer including GaN on Si,GaN on SiC and GaN on Sapphire are for Mini / micro LED, power electronics and microwave RF.

As a leading professional company, we are committed to constantly improving the quality of existing products. PAM-XIAMEN has a strong technical R & D team, composed of graduate students, doctors, masters, and has a strong R & D strength. The technical backbone of the company has been engaged in material preparation and related equipment design and development for almost 30years, and has in-depth research on the physical, chemical and electrical properties of materials, material preparation process. The accumulation of many years of theoretical deposition and practical experience of scientific and technological personnel makes the company have unique insights and unique advantages in the development of relevant materials and equipment, while ensuring that the product performance and equipment design scheme of the company meet the actual technical and technological needs of users.