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NDS356AP Power Transistor P-Channel Logic Level Enhancement Mode Field Effect Transistor

Categories Power Mosfet Transistor
Brand Name: FAIRCHILD
Model Number: NDS356AP
Certification: Original Factory Pack
Place of Origin: Philippines
MOQ: 20
Price: Negotiate
Payment Terms: T/T, Western Union,Paypal
Supply Ability: 20000
Delivery Time: 1
Packaging Details: please contact me for details
Drain-Source Voltage: -30 V
Gate-Source Voltage - Continuous: ±20 V
Maximum Drain Current - Continuous (: ±1.1 A
Maximum Power Dissipation: 0.5 W
Operating and Storage Temperature Range: -55 to 150 °C
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NDS356AP Power Transistor P-Channel Logic Level Enhancement Mode Field Effect Transistor


NDS356AP P-Channel Logic Level Enhancement Mode Field Effect Transistor


General Description

SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.


Features

►-1.1 A, -30 V, RDS(ON) = 0.3 W @ VGS=-4.5 V

RDS(ON) = 0.2 W @ VGS=-10 V.

►Industry standard outline SOT-23 surface mount package

using proprietary SuperSOTTM-3 design for superior thermal

and electrical capabilities.

►High density cell design for extremely low RDS(ON).

►Exceptional on-resistance and maximum DC current capability.


Absolute Maximum Ratings TA = 25°C unless otherwise noted

SymbolParameterNDS356APUnits
VDSSDrain-Source Voltage-30V
VGSSGate-Source Voltage - Continuous±20V
IDMaximum Drain Current - Continuous±1.1A
PDMaximum Power Dissipation0.5W
TJ ,TSTGOperating and Storage Temperature Range-55 to 150°C

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