bld6g21ls 50 112 power mosfet

Categories:Transistors - FETs, MOSFETs - RF

Country/Region:china

..., please refer to the data sheet, such as PDF files Docx documents, etc. We have BLD6G21LS-50,112 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our ...

Categories:FETs MOSFETs

Country/Region:china

RF Mosfet 28 V 170 mA 2.02GHz 14.5dB 8W CDFM4

Categories:RF FETs, MOSFETs

Country/Region:china

RF Mosfet 28 V 170 mA 2.02GHz 14.5dB 8W CDFM4

Categories:RF FETs, MOSFETs

Country/Region:china

RF Mosfet 28 V 170 mA 2.02GHz 14.5dB 8W CDFM4

Brand Name:ASEMI

Model Number:KBPC5010

Place of Origin:original

KBPC5010 50.0A Power Mosfet Transistor Single Phase Silicon Bridge Rectifier digital ic circuits Features ♦This series is UL listed under the Recognized Component ...

Brand Name:IRF

Model Number:IRLML6402TRPBF

Place of Origin:Original

HEXFET Power MOSFET T ♦Ultra Low On-Resistance ♦P-Channel MOSFET ♦SOT-23 Footprint ♦Low Profile (<1.1mm) ♦Available in Tape and Reel ♦Fast Switching These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve ...

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDC6306P

High Power MOSFET FDC6306P Dual P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -1.9A, 170mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 ...

Place of Origin:Original

...50,112 Specifications Part Status Obsolete Transistor Type LDMOS (Dual), Common Source Frequency 2.02GHz Gain 14.5dB Voltage - Test 28V Current Rating 10.2A Noise Figure - Current - Test 170mA Power - Output 8W Voltage - Rated 65V Package / Case SOT-1130A Supplier Device Package CDFM4 Shipment UPS/EMS/DHL/FedEx Express. Condtion New original factory. BLD6G21L-50,112...

Place of Origin:US

Brand Name:Original

Model Number:IRF3205PBF

Product Detail IRF3205 also have China made high quality,cheap quality, original, if interested,pls contact us to get quote. Our company can supply all IRF Series,BT134-600E IRF3205 IRF540 IRF630 IRF640 IRFP250 IRF4905 IRF730 IRF740 IRFZ44 BT136S-600 ...

Categories:RF FETs, MOSFETs

Country/Region:china

RF Mosfet 50 V 150 mA 3GHz 11.5dB 50W SOT467C

Place of Origin:PHILIPPINE

Brand Name:MOT

Model Number:MRF141G

... solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 175 MHz, 28 V: Output Power — 300 W Gain — 12 dB (14 dB Typ) Efficiency — 50% Applications:

Brand Name:Original Factory

Model Number:IPT020N10N5ATMA1

Place of Origin:China

Power MOSFET Original Integrated Circuit IPT020N10N5ATMA1 Product Description Less paralleling required Increased power density Reduced switching and conduction losses Product Specifications Part Number: IPT020N10N5ATMA1 FET Type: N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 273W (Tc) Series: OptiMOS™5 Technology: MOSFET (Metal Oxide) Input Capacitance (Ciss) (Max) @ Vds 11000 pF @ 50...

Brand Name:TOSHIBA

Model Number:IRF740PBF

Place of Origin:Original Factory

...Power MOSFET 125W 550 MOhms Description Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50...

Brand Name:Original Factory

Model Number:SCT011H75G3AG

Place of Origin:CN

.... Specification Of SCT011H75G3AG Part Number: SCT011H75G3AG Package: H²PAK-7 Gate-Source Voltage: -10V To 22V Thermal Resistance, Junction-To-Ambient: 50 °C/W

Brand Name:ON

Model Number:RFD14N05LSM

Place of Origin:USA

RFD14N05LSM 14A 50V 0.1Ohm Logic Level N-Channel Power Mosfets TO-252AA Surface Mount Introduction: The RFD14N05LSM is a 14 A,50 V, 0.1 Ω, N-Channel Logic Level Power Mosfet. It comes in a Package of TO-252AA and Operting Temperature ranges from -55 °C to ...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:MBR1030,35,40,45,50

MBR1030,35,40,45,50 TO-220A Plastic-Encapsulate Diodes Schottky Bridge Rectifier FEATURE Schottky Barrier Chip Low Power Loss,High Efficiency Guard Ring Die Construction for Transient Protection High Surge Capability High Current Capability and Low Forward...

Model Number:D2010UK

Place of Origin:Malaysia

Brand Name:KAIGENG

D2010UK N/A Electronic Components IC MCU Microcontroller Integrated Circuits D2010UK #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Product Description: One of the standout features of this High Power MOSFET is its high efficiency. By minimizing power losses during operation, it ensures that a greater amount of input power is converted into useful output power. This results in improved...

Brand Name:Vishay Siliconix

Model Number:SI3456DDV-T1-E3

Place of Origin:original

SI3456DDV-T1-E3 MOSFET Power Electronics High Voltage and High Current Capacity for High Efficiency Applications The SI3456DDV-T1-E3 is an advanced N-Channel Enhancement Mode MOSFET designed for reliable high speed switching and low on-resistance. It ...

Brand Name:UCHI

Model Number:SGM2034

Place of Origin:Dongguan China

High Accuracy, Low Noise, Low Power LDO 1μA Ultra-Low Current Consumption AndLow Dropout CMOS Voltage Regulator The SGM2034 is an ultra-low current consumption, lowdropout voltage and high accuracy linear regulator. It iscapable of supplying 250mA output ...