blf6g10 45 112 power mosfet

Categories:RF MOSFET Transistors

Country/Region:china

The BLF6G10-45,112,from NXP Semiconductors,is RF MOSFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us ...

Categories:RF FETs, MOSFETs

Country/Region:china

RF Mosfet 28 V 350 mA 922.5MHz ~ 957.5MHz 22.5dB 1W CDFM2

Categories:Transistors - FETs, MOSFETs - RF

Country/Region:china

... refer to the data sheet, such as PDF files Docx documents, etc. We have BLF6G10-200RN,112 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our ...

Categories:RF FETs, MOSFETs

Country/Region:china

RF Mosfet 28 V 1.4 A 871.5MHz ~ 891.5MHz 20dB 40W SOT502A

Brand Name:IRF

Model Number:IRLML6402TRPBF

Place of Origin:Original

HEXFET Power MOSFET T ♦Ultra Low On-Resistance ♦P-Channel MOSFET ♦SOT-23 Footprint ♦Low Profile (<1.1mm) ♦Available in Tape and Reel ♦Fast Switching These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve ...

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDC6306P

High Power MOSFET FDC6306P Dual P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -1.9A, 170mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 ...

Brand Name:IRF

Model Number:IRLML6402TRPBF

Place of Origin:Original

HEXFET Power MOSFET T ♦Ultra Low On-Resistance ♦P-Channel MOSFET ♦SOT-23 Footprint ♦Low Profile (<1.1mm) ♦Available in Tape and Reel ♦Fast Switching These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve ...

Place of Origin:US

Brand Name:Original

Model Number:IRF3205PBF

Product Detail IRF3205 also have China made high quality,cheap quality, original, if interested,pls contact us to get quote. Our company can supply all IRF Series,BT134-600E IRF3205 IRF540 IRF630 IRF640 IRFP250 IRF4905 IRF730 IRF740 IRFZ44 BT136S-600 ...

Categories:FETs MOSFETs

Country/Region:china

RF Mosfet 28 V 405 mA 2.11GHz ~ 2.17GHz 18.5dB 2.5W CDFM2

Brand Name:Original Factory

Model Number:SCTWA35N65G2V

Place of Origin:CN

...Power MOSFET Transistors Product Description Of SCTWA35N65G2V SCTWA35N65G2V is Silicon carbide Power MOSFET 650 V, 55 mOhm 45 A in an TO-247 long leads package. Specification Of SCTWA35N65G2V Part Number SCTWA35N65G2V Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 650 V Id - Continuous Drain Current: 45...

Brand Name:original

Model Number:STP45N10F7

Place of Origin:Original Manufacturer

... Contact Us High Light: STP45N10F7 Integrated IC Chip , N Channel Power MOSFETs , 100V N channel Power MOSFETs STP45N10F7 MOSFET N-channel 100 V 0 013 Ohm typ 45 A STMicroelectronics STP45N10F7 is a power field-effect transistor (MOSFET) chip suitable for

Brand Name:STMicroelectronics

Model Number:STP45N10F7

Place of Origin:CHINA

...MOSFET N-channel 100 V 0 013 Ohm typ 45 A STMicroelectronics STP45N10F7 is a power field-effect transistor (MOSFET) chip suitable for high-voltage, high-current, high-speed switching and high-efficiency power conversion applications. The following are some application scenarios of the STP45N10F7 chip: Power management: The STP45N10F7 chip can be used in power management applications such as power switches, DC-DC converters, and power

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Product Description: One of the standout features of this High Power MOSFET is its high efficiency. By minimizing power losses during operation, it ensures that a greater amount of input power is converted into useful output power. This results in improved...

Brand Name:onsemi

Model Number:NTMFS4C03NT1G

Place of Origin:original

...MOSFET Power Electronics 4A Ultra Low On Resistance Gate Charge AECQ101 Qualified Single N-Channel FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 30A (Ta), 136A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.1mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 45...

Place of Origin:PHILIPPINE

Brand Name:Texas Instruments

Model Number:TPS2212IDB

Quick Detail: SINGLE-SLOT, PARALLEL INTERFACE POWER SWITCH FOR LOW POWER PC CARD SLOTS Description: The TPS2212 PC Card power-interface switch provides an integrated power-management solution for a single low power PC Card. All of the discrete power ...

Brand Name:UCHI

Model Number:SGM2034

Place of Origin:Dongguan China

High Accuracy, Low Noise, Low Power LDO 1μA Ultra-Low Current Consumption AndLow Dropout CMOS Voltage Regulator The SGM2034 is an ultra-low current consumption, lowdropout voltage and high accuracy linear regulator. It iscapable of supplying 250mA output ...

Model Number:T11

Place of Origin:Guangdong, China

1200W Portable Solar Power Generator MPPT Controller LifeP04 Battery Car Home Use 110V/220V AC Output Power Supply Station Products Description Product Paramenters Item Name T11 1200W Portable solar generator General parameters Built-in battery LiFePO4 ...

Brand Name:ESTEL

Model Number:GPE4890A

Place of Origin:Shenzhen, China (Mainland)

Microwave Communication GPE4890A Telecom Rectifier System / High Efficiency Telecom Power System High Efficiency Quick Details: Place of Origin: Shenzhen, China (Mainland) Input Voltage: AC220V Brand Name: ESTEL Output Voltage: DC48V Model Number: GPE4890A...

Brand Name:Original brand

Model Number:A3G20S250-01SR3

Place of Origin:Original

Mosfet Power Transistor A3G20S250-01SR3 Airfast RF Power GaN Transistor, 1800-2200 MHz, 45 W Avg., 48 V This 45 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 1800 to 2200 MHz. This part is ...

Brand Name:CJ

Model Number:CJ2312

Place of Origin:CN

CJ2312 N - Channel 20V 5A ( D - S ) Mosfet SOT-23 ( TO-236 ) 3-Lead Plastic - Encapsulate Mosfets FEATURES: • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC ...