bll6g1214ls 250 11 mosfet transistor

Place of Origin:Original

BLL6G1214LS-250,11 Specifications Part Status Obsolete Transistor Type LDMOS Frequency 1.2GHz ~ 1.4GHz Gain 15dB Voltage - Test 36V Current Rating - Noise Figure - Current - Test 150mA Power - Output 250W Voltage - Rated 89V Package / Case SOT-502B Supplier Device Package SOT502B Shipment UPS/EMS/DHL/FedEx Express. Condtion New original factory. BLL6G1214LS-250,11...

Categories:FETs MOSFETs

Country/Region:china

RF Mosfet 36 V 150 mA 1.2GHz ~ 1.4GHz 15dB 250W SOT502B

Categories:RF FETs, MOSFETs

Country/Region:china

RF Mosfet 36 V 150 mA 1.2GHz ~ 1.4GHz 15dB 250W SOT502B

Categories:RF FETs, MOSFETs

Country/Region:china

RF Mosfet 36 V 150 mA 1.2GHz ~ 1.4GHz 15dB 250W SOT502B

Brand Name:TOSHIBA

Model Number:2SC5200-O

Place of Origin:Original

...mosfet transistors STOCK LIST MPC89E58AF 5910 MEGAWIN 16+ PQFP CS4398-CZZR 2234 CIRRUS 15+ TSSOP LC4064V-75TN100-10I 3070 LATTICE 15+ QFP ME0550-02DA 595 IXYS 14+ IGBT MDD26-14N1B 5902 IXYS 16+ IGBT MT9V024IA7XTM 2499 ON 15+ BGA MCC21-1408B 4756 IXYS 14+ IGBT CM100DU-24NFH 378 MITSUBI 15+ MODULE 6RI100E-080 958 FUJI 15+ MODULE PM150RSD060 250 MITSUBISH 10+ MOUDLE PK160F-160 120 SANREX 11...

Brand Name:Original Factory

Model Number:NTMFD5C470NLT1G

Place of Origin:CN

...MOSFET Transistor 8-DFN Integrated Circuit Chip Product Description Of NTMFD5C470NLT1G NTMFD5C470NLT1G is Dual N-Channel 40V, 11.511.5mOhm, 36A Power MOSFET Transistors. Specification Of NTMFD5C470NLT1G Part Number NTMFD5C470NLT1G Technology MOSFET (Metal Oxide) Configuration 2 N-Channel (Dual) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 11A (Ta), 36A (Tc) Rds On (Max) @ Id, Vgs 11

Brand Name:MACOM

Model Number:MRF150

Place of Origin:PHI

... W Minimum Operating Temperature: - 65 C Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: 221-11-3 Packaging: Tray Brand:

Brand Name:onsemi

Model Number:FDD86102

Place of Origin:Multi-origin

FDD86102 MOSFET Power Electronics The FDD86102 is a MOSFET power electronics device designed to provide high-efficiency power conversion. It features low on-resistance and low gate charge for superior power delivery. The device is constructed with a low-...

Categories:RF FETs, MOSFETs

Country/Region:china

RF Mosfet 50 V 100 mA 1.2GHz ~ 1.4GHz 17dB 250W SOT502B

Model Number:STP65NF06

Place of Origin:original factory

...11.5mΩ - 60A - DPAK/TO-220 STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STD65NF06 60V <14mΩ 60A STP65NF06 60V <14mΩ 60A ■ Standard level gate drive ■ 100% avalanche tested Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size”™ strip-based process. The resulting transistor...

Categories:Transistors - FETs, MOSFETs - RF

Country/Region:china

...250,112 Overview\\nBLL6G1214L-250,112 is a model belonging to the Transistors - FETs, MOSFETs - RF subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have BLL6G1214L-250...

Place of Origin:China

Brand Name:ONSEMI

Model Number:NVMJS1D6N06CL

...MOSFET NVMJS1D6N06CL Power MOSFET 60 V, 1.36 mOhms, 250 A, Single N-Channel [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor...

Place of Origin:US

Brand Name:Original

Model Number:MMBT3906-7-F

Product Description Product Category: Bipolar Transistors - BJT RoHS: RoHS Compliant Details Mounting Style: SMD/SMT Package / Case: SOT-23 Transistor Polarity: PNP Configuration: Single Collector- Emitter Voltage VCEO Max: - 40 V Collector- Base Voltage ...

Brand Name:Mitsubishi

Model Number:RD100HHF1

Place of Origin:JP

RD100HHF1 MOSFET type transistor specifically designed for HF High power amplifiers applications FEATURES • High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz • High Efficiency: 60%typ.on HF Band APPLICATION For output stage of high power ...

Brand Name:Original

Model Number:IPB200N25N3G

Place of Origin:Original

...: 250 V Id - Continuous Drain Current: 64 A Rds On - Drain-Source Resistance: 17.5 mOhms Vgs - Gate-Source Voltage: - ...

Brand Name:Nexperia

Model Number:BUK9M120-100EX

...® Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 11.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id,

Brand Name:Infineon

Model Number:IRF7907TRPBF

MOSFET MOSFT DUAL NCh 30V 9.1A Product Attribute Attribute Value Select Attribute Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SOIC-8 Transistor Polarity: N-Channel Number of Channels: 2 Channel Vds - Drain-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 9.1 A, 11 A Rds On - Drain-Source Resistance: 17.1 mOhms, 11...

Brand Name:Nexperia USA Inc.

Model Number:BZX84-A24-QR

... package. This mainstay package in semiconductors was introduced in 1969 and quickly became an industry standard. The SOT23 encapsulates an extensive range of diodes, bipolar transistors, MOSFETs,

Brand Name:XUWEN

Model Number:Lithium BMS System 3S 6A 10A 11.1V 12V 12.6V

Place of Origin:China

Lithium BMS System 3S 6A 10A 11.1V 12V 12.6V 18650 Battery Protection Board PCB PCM Discharge current 15A 20A 25A Over discharge current Protection 2-4 times of continuous discharge current Mosfet <20mΩ Charge current 10A 15A 20A Charging voltage 54.6V Ove...

Place of Origin:Japan

Model Number:BLF878 216-0833132 Computer GPU CHIP AMD IC

Specifications BLF878 1.Top Distributor 2.Large Stock 3.Chairman Enterprise 4.Quality Control Model number QTY MFG D/C HSDL-3201#021 3880 Agilent 0545+ AFBR-57R6APZ-EMC 5 AVAGO 07+ HFBR-5984LQ 29 AVAGO 0626+ HFBR5984 29 AVAGO 0629+ BU-61580S6-110 4 DDC ...