low leakage n channel igbt

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MBM50F12

Quick Detail: Silicon N-channel IGBT Description: Silicon N-channel IGBT Applications: * High speed, low loss IGBT module. * Low driving power due to low input capacitance MOS gate. * Low noise due to ultra soft fast recovery diode. * High reliability, ...

Place of Origin:CN

Brand Name:Original Factory

Model Number:FS150R12KT4B11

Automotive IGBT Modules FS150R12KT4B11 1.2KV 150A N-Channel IGBT Silicon Modules [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 ...

Brand Name:MORNSUN

Model Number:H_S-1WR2 Series

Place of Origin:China

...,low isolation capacitor and low leakage current power.They are widely used in medical,electricity,IGBT driver and so on.They are suitable for: 1.Where the voltage of the input power supply is stable(voltage variation:±10%Vin); 2.Where isolation is

Brand Name:ONSEMI

Model Number:MGP20N40CL

Place of Origin:Original

...Channel IGBT switching power mosfet low power mosfet This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES monolithic circuitry for usage as an Ignition Coil Driver • Temperature Compensated Gate–Collector Clamp Limits Stress Applied to Load • Integrated ESD Diode Protection • Low...

Brand Name:TOSHIBA

Model Number:GT20J301

Place of Origin:JAPAN

...Channel ( High Power Switching Motor Control Applications ) Toshiba Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS ●The 3rd Generation ●Enhancement-Mode ●High Speed. : tf=0.30pμs (Max.) ●Low...

Brand Name:STMicroelectronics

Model Number:STGP7NC60HD

Place of Origin:CHINA

...channel very fast IGBT with Ultrafast diode Description These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low...

Brand Name:Analog Devices Inc.

Model Number:ADG749BKSZ-REEL7

Place of Origin:Mult-origin

Product Name: ADG749BKSZ-REEL7 Description: This is a high-performance, low-power, dual CMOS analog multiplexer/demultiplexer with low on-resistance. Features: • Low On-Resistance: 0.8 Ω max • Low Off-Leakage: 0.1 nA max • Low Crosstalk: -55 dB max • High ...

Brand Name:YIBU

Model Number:RG

Place of Origin:China

Waste heat recovery system The specially designed Flue Gas Heat Exchanger with integrated CIP system, which is well suited for dust loaded air, is to be installed in the actual discharge channel. The circulation system transports the recovered energy...

Brand Name:Microchip

Model Number:APT25GT120BRG

Place of Origin:USA

...IGBT Transistors Product Description: The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed. Application: • Low Forward Voltage Drop • High Freq. Switching to 50KHz • Low Tail Current • Ultra Low Leakage...

Brand Name:Mitsubishi

Model Number:MDD44-16N1B

Place of Origin:Japan

...High Power IGBT Module Electronic components Discrete Semiconductor Modules Phase leg Features / Advantages Package with DCB ceramic Improved temperature and power cycling Planar passivated chips Very low forward voltage drop Very low leakage current ...

Brand Name:Infineon

Model Number:FP75R12KT4B11BOSA1

Place of Origin:Germany

...IGBT Module LOW POWER ECONO FP75R12KT4_B11 Manufacturer: Infineon Product Type: IGBT Modules Configuration: 3-Phase Inverter Collector-emitter maximum voltage VCEO: 1.2 kV Collector-emitter saturation voltage: 1.85 V Continuous collector current at 25 C: 75 A Gate-emitter leakage...

Model Number:MAX4518CSD

Place of Origin:original factory

...Channel/Dual 2-Channel, Low-Voltage, CMOS Analog Multiplexers General Description The MAX4518/MAX4519 precision, monolithic, CMOS analog multiplexers (muxes) offer low on-resistance (less than 100Ω), which is matched to within 4Ω between channels and remains flat over the specified analog signal range (10Ω max). They also offer low leakage over temperature (NO-off leakage...

Brand Name:ON/Fairchild

Model Number:G40N60UFD

Place of Origin:Original Factory

...IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features : • High speed switching • Low...

Brand Name:PI

Model Number:2SC0435T2G1-17

Place of Origin:CHINA

SCALE™-2 2SC0435T2G1-17 2SC0435T2G1-17 Preliminary Datasheet Dual-Channel Low-Cost SCALE™-2 IGBT and MOSFET Driver Core Abstract The low-cost SCALE™-2 dual-driver core 2SC0435T2G1-17 (Connector pin length of 3.1mm, suitable for PCB thickness of 2mm; ...

Brand Name:INFINEON

Model Number:BSC011N03LSI

Place of Origin:INFINEON

...IGBT Power Module With High Current Low Internal Resistance BSC011N03LSI Mosfet TDSON-8 With High Current And Low Internal Resistance Product Attribute Attribute Value Search Similar Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: TDSON-8 Transistor Polarity: N-Channel Number of Channels: 1 Channel...

Brand Name:original

Model Number:2N4416

Place of Origin:original

...Package options. DESCRIPTION The -30V InterFET 2N4416 and 2N4416A are targeted for sensitive mixer and VHF Amplifier amplifier designs. Gate leakages are typically less than 10pA at room temperatures. The “A” variant has a higher breakdown Voltage. The

Brand Name:IXYS

Model Number:IXFK27N80Q

Place of Origin:Original Factory

IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS advanced low Qg process • Low gate ...

Place of Origin:XIAMEN,china

Brand Name:COBE

...LEAKAGE DETECTOR Main Technical Data Detection channels: 4,8,16 (expandable 64- channel) Detection Thickness (45 # steel) :10-30mm Real-time trace memory 16 signals Maximum lift-off height: 5mm A variety of magnetic methods: AC, DC, mixed-type Gain: 0 ~ 99dB continuously adjustable 0.1dB step Detection speed :10-30M / min DSP digital filtering: Low...

Brand Name:Original brand

Model Number:NTMFS5H419NLT1G

Place of Origin:Original

...Low Coss SMD/SMT Feature • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant Categories MOSFET T8 40V LOW COSS NTMFS5H419NLT1G Transistor Polarity N-Channel Channel No. 1 Channel Leakage...

Brand Name:Semtech

Model Number:SMF05C.TCT

Place of Origin:China

...Channel ESD Protection Array with Low Capacitance IEC 61000-4-2 Compliance 5V Rating Ultra-Small Package and Space-Saving Design for High-Speed Data Line Protection andnbsp; Features ESD protection for data lines to andnbsp; IEC 61000-4-2(ESD)+15kV(air),andplusmn;8kV (contact) andnbsp; IEC 61000-4-4(EFT) 40A(5/50ns) Small package for use in portable electronics Protects five l/0 lines Working voltage: 5v Low leakage current Low